Abstract : The previous work within the LPICM highlighted that microcrystalline silicon is a semiconductor at low cost fabrication, having interesting ﬁeld eﬀect mobility and a high stability. All these make it become a particularly interesting material for the TFTs on the OLED technology. Within the framework of the thesis, it is logical to us to design and to realize experimentally of the pixel structures of OLED using the microcrystalline silicon TFTs. With this intention, it is essential to have the powerful behavioural models of the devices. Thus, our primary objective was to design the Spice models of the c-Si TFT as well as the OLED. From a technological point of view, we control the whole of the production line (design of masks and lithography in clean room). The realized transistors have the motilities of about 1 cm2V−1s−1, the threshold voltage of 4 V and have a good stability under the high ﬁeld stress, in term of the threshold voltage as well as the mobility. The feasibility of these transistors on the ﬂexible substrates such as polyimide was also proven within the Integrated Project FlexiDis. From the modelling point of view, a static and dynamic Spice model of the microcrystalline silicon transistor is proposed. The integration of this model in the Verilog-A language enables us to guarantee a good portability and then to use easily the professional simulators such as the Spectre from Cadence for the simulations. We also proposed an eﬃcient Spice model for the OLED. Thanks to these tools, we could simulate the circuits using the microcrystalline silicon TFTs. The realized simulations enable us to predict that these components are relevant for the design of pixel OLED, for the line drivers as well as some simple logical electronics NMOS such as the inverters and the ring oscillators.