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Dépôt séquentiel de monocouches d'oxyde par voie humide pour la microélectronique.

Abstract : Self-assembly chemistry offers a good method to obtain dense and high quality oxide films for dielectric applications as well as hybrid systems. Using a laboratory built automate in a controlled atmosphere of nitrogen, a silicon wafer was alternatively dipped in different dilute solutions of alkoxides, phosphoric acid and water (hydrolysis). Each sequence was followed by rinsing in ethanol in order to graft one monolayer only and in water to activate the substrate for the following cycle. A better control of the film density as compared to the classical sol-gel method was obtained by working w! ith very dilute solutions (< 10-3 mol / L) and low! withdra wal speed (< 2 cm/min.). Bidimensional titanium (or zirconium) phosphates, artificial sequences of alternate oxide layers of (ZrO2)n and luminescent lanthanum phosphate europium (Eu3+) doped compounds have been synthesized on silicon by this self-assembly method.
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Submitted on : Wednesday, July 28, 2010 - 11:30:41 AM
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  • HAL Id : pastel-00002566, version 1



Gabriel Freiman. Dépôt séquentiel de monocouches d'oxyde par voie humide pour la microélectronique.. Physique [physics]. Ecole Polytechnique X, 2006. Français. ⟨pastel-00002566⟩



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