High-?? gate dielectrics: Current status and materials properties considerations, Journal of Applied Physics, vol.89, issue.10, pp.5243-5275, 2001. ,
DOI : 10.1063/1.1361065
Solid State Technology, pp.34-38, 2006. ,
VLSI Fabrication Principles ? Silicon and Gallium Arsenide, 1983. ,
Reliability and integration of ultra-thin gate dielectrics for advanced CMOS, Microelectronic Engineering, vol.36, issue.1-4, pp.13-20, 1997. ,
DOI : 10.1016/S0167-9317(97)00007-5
High-k gate dielectrics, Series in Materials Science and Engineering. Institute of Physics, 2004. ,
Band offsets of high dielectric constant gate oxides on silicon, Journal of Non-Crystalline Solids, vol.303, issue.1, pp.94-100, 2002. ,
DOI : 10.1016/S0022-3093(02)00972-9
Etude de caractérisation de matériaux diélectriques de grille à forte permittivité pour les technologies CMOS ultimes, Thèse. INSA de Lyon, 2003. ,
A Thermodynamic Approach to Selecting Alternative Gate Dielectrics, MRS Bulletin, vol.20, issue.03, pp.198-204, 2002. ,
DOI : 10.1016/0038-1098(71)90643-0
Electrical and physico-chemical characterization of HfO2/SiO2 gate oxide stacks prepared by atomic layer deposition, Solid-State Electronics, vol.47, issue.10, pp.1613-1616, 2003. ,
DOI : 10.1016/S0038-1101(03)00170-9
MONOMOLECULAR FILMS OF FATTY ACIDS ON GLASS, Journal of the American Chemical Society, vol.56, issue.2, p.495, 1934. ,
DOI : 10.1021/ja01317a513
Built-Up Films of Barium Stearate and Their Optical Properties, Physical Review, vol.51, issue.11, p.964, 1937. ,
DOI : 10.1103/PhysRev.51.964
Systems of Monomolecular Layers-Assembling and Physico-Chemical Behavior, Angewandte Chemie International Edition in English, vol.749, issue.9, p.620, 1971. ,
DOI : 10.1002/anie.197106201
Inter- and Intralayer Energy Transfer in Zirconium Phosphate???Poly(allylamine hydrochloride) Multilayers:?? An Efficient Photon Antenna and a Spectroscopic Ruler for Self-Assembled Thin Films, Journal of the American Chemical Society, vol.118, issue.17, pp.4222-4223, 1996. ,
DOI : 10.1021/ja960384m
Fuzzy Nanoassemblies: Toward Layered Polymeric Multicomposites, Science, vol.277, issue.5330, pp.1232-1237, 1997. ,
DOI : 10.1126/science.277.5330.1232
Free Energy Model for Layer-by-Layer Processing of Polyelectrolyte Multilayer Films, Langmuir, vol.18, issue.24, pp.9600-9604, 2002. ,
DOI : 10.1021/la026111o
Investigation of the Influence of Polyelectrolyte Charge Density on the Growth of Multilayer Thin Films Prepared by the Layer-by-Layer Technique, Macromolecules, vol.35, issue.3, pp.889-897, 2002. ,
DOI : 10.1021/ma011349p
Self-assembly of gold nanoparticles for the voltammetric sensing of epinephrine, Electrochemistry Communications, vol.8, issue.6, pp.1035-1040, 2006. ,
DOI : 10.1016/j.elecom.2006.04.012
Colloids and Surfaces A : Physicochem. Eng. Aspects, pp.284-285, 2006. ,
WELL-BEHAVED METAL-OXIDE-SEMICONDUCTOR CAPACITOR CHARACTERISTICS OF ZIRCONIUM OXIDE FILMS FABRICATED BY SURFACE SOL-GEL PROCESS, Integrated Ferroelectrics, vol.97, issue.1, pp.3-11, 2005. ,
DOI : 10.1063/1.1385347
Effect of multi-coating process on the orientation and microstructure of lead zirconate titanate (PZT) thin films derived by chemical solution deposition, Thin Solid Films, vol.489, issue.1-2, pp.74-78, 2005. ,
DOI : 10.1016/j.tsf.2005.05.004
Fabrication of lead zirconate titanate thin films using a diffusion process of lead zirconate and lead titanate multilayer films, Journal of Crystal Growth, vol.236, issue.1-3, pp.248-252, 2002. ,
DOI : 10.1016/S0022-0248(01)02132-7
Preparation of titanium(IV) oxide thin film photocatalyst by sol???gel dip coating, Materials Chemistry and Physics, vol.77, issue.3, pp.744-750, 2002. ,
DOI : 10.1016/S0254-0584(02)00138-4
The Physics and Chemistry of Sol-Gel Processing, « Sol-Gel Science, 1990. ,
Stepwise Adsorption of Metal Alkoxides on Hydrolyzed Surfaces : A Surface Sol-Gel Process, Chemistry Letters, vol.25, issue.10, pp.831-832, 1996. ,
DOI : 10.1246/cl.1996.831
and Other Metal Oxide Films with Molecular Precision, Chemistry of Materials, vol.9, issue.6, pp.1296-1298, 1997. ,
DOI : 10.1021/cm970008g
Zirconia???Titania Nanofilm with Composition Gradient, Nano Letters, vol.2, issue.6, pp.669-672, 2002. ,
DOI : 10.1021/nl0255653
Thin Solid Films, pp.138-142, 2001. ,
Optimization of the feedback constant control for the mass-controlled layer-by-layer sequential adsorption technique for polyelectrolyte thin films, Thin Solid Films, vol.393, issue.1-2, pp.132-137, 2001. ,
DOI : 10.1016/S0040-6090(01)01058-6
Gouttes, bulles, perles et ondes, Belin, 2002. ,
Structural and optical properties of n-propoxide sol???gel derived ZrO2 thin films, Thin Solid Films, vol.496, issue.2, pp.227-233, 2005. ,
DOI : 10.1016/j.tsf.2005.08.309
Thin Solid Films, pp.125-128, 2005. ,
Local amorphous thin???film crystallization induced by focused electron???beam irradiation, Applied Physics Letters, vol.68, issue.3, pp.331-333, 1996. ,
DOI : 10.1063/1.116706
Electrical and materials properties of ZrO2 gate dielectrics grown by atomic layer chemical vapor deposition, Applied Physics Letters, vol.78, issue.16, p.2357, 2001. ,
DOI : 10.1063/1.1362331
X-ray reflectivity, diffraction and grazing incidence small angle X-ray scattering as complementary methods in the microstructural study of sol???gel zirconia thin films, Thin Solid Films, vol.495, issue.1-2, pp.224-231, 2006. ,
DOI : 10.1016/j.tsf.2005.08.335
URL : https://hal.archives-ouvertes.fr/hal-00091525
Ultrathin high-K metal oxides on silicon: processing, characterization and integration issues, Microelectronic Engineering, vol.59, issue.1-4, pp.341-349, 2001. ,
DOI : 10.1016/S0167-9317(01)00667-0
« Isolants pour carbure de silicium (sic) : synthèse et caractérisation de films minces d'oxyde de magnésium (MgO) élaborés par procédé sol-gel, Thèse de l'Université, 2004. ,
Sol???gel MgO thin films for insulation on SiC, Materials Science in Semiconductor Processing, vol.7, issue.4-6, pp.249-252, 2004. ,
DOI : 10.1016/j.mssp.2004.09.017
MgO insulating films prepared by sol???gel route for SiC substrate, Journal of the European Ceramic Society, vol.25, issue.12, pp.2795-2798, 2005. ,
DOI : 10.1016/j.jeurceramsoc.2005.03.142
Reliability and integration of ultra-thin gate dielectrics for advanced CMOS, Microelectronic Engineering, vol.36, issue.1-4, pp.13-20, 1997. ,
DOI : 10.1016/S0167-9317(97)00007-5
Mechanisms of Thermal Decomposition of Organic Monolayers Grafted on (111) Silicon, Langmuir, vol.23, issue.3, pp.1326-1332, 2007. ,
DOI : 10.1021/la061260i
X-Ray Powder Diffraction Study of Layer Compounds. The Crystal Structure of alpha-Ti(HPO4)2.H2O and a Proposed Structure for gamma-Ti(H2PO4)(PO4)).2H2O ., Acta Chemica Scandinavica, vol.44, p.865, 1990. ,
DOI : 10.3891/acta.chem.scand.44-0865
from Aqueous Solutions:?? An in Situ Internal Reflection Infrared Spectroscopic Study, Langmuir, vol.15, issue.8, pp.2916-2921, 1999. ,
DOI : 10.1021/la980894p
High-k Gate Dielectrics. Institute of Physics, Series in Materials Science and Engineering, Chapter, p.251, 2004. ,
High-k Gate Dielectrics, Institute of Physics, Series in Materials Science and Engineering, 2004. ,
Stretch-out of high-permittivity MOS capacitance???voltage curves resulting from a lateral non-uniform oxide charge distribution, Journal of Non-Crystalline Solids, vol.322, issue.1-3, p.219, 2003. ,
DOI : 10.1016/S0022-3093(03)00205-9
Electrical study of polyelectrolyte self-assembled films using mercury probe, Materials Science and Engineering: C, vol.22, issue.2, pp.387-391, 2002. ,
DOI : 10.1016/S0928-4931(02)00203-5
Emission properties and applications of nanostructured luminescent oxide nanoparticles, Progress in Solid State Chemistry, vol.33, issue.2-4, p.99, 2005. ,
DOI : 10.1016/j.progsolidstchem.2005.11.041
URL : https://hal.archives-ouvertes.fr/hal-00824461
:Eu Nanoparticles, The Journal of Physical Chemistry B, vol.107, issue.28, p.6754, 2003. ,
DOI : 10.1021/jp0342226
Synthesis and sintering of LaPO4 powder and its application, Materials Chemistry and Physics, vol.79, issue.1, pp.30-36, 2003. ,
DOI : 10.1016/S0254-0584(02)00420-0
Sol???gel fabrication, patterning and photoluminescent properties of LaPO4:Ce3+,Tb3+ nanocrystalline thin films, Chemical Physics Letters, vol.371, issue.1-2, pp.178-183, 2003. ,
DOI : 10.1016/S0009-2614(03)00239-2
Synthesis and Photoluminescent Properties of Titanate Layered Oxides Intercalated with Lanthanide Cations by Electrostatic Self-Assembly Methods, The Journal of Physical Chemistry B, vol.109, issue.26, pp.12748-12754, 2005. ,
DOI : 10.1021/jp0517089
Ultrathin Films and Hollow Shells with Pillared Architectures Fabricated via Layer-by-Layer Self-Assembly of Titania Nanosheets and Aluminum Keggin Ions, The Journal of Physical Chemistry B, vol.108, issue.14, pp.4283-4288, 2004. ,
DOI : 10.1021/jp035818w
Ions, Chemistry Letters, vol.31, issue.7, p.742, 2002. ,
DOI : 10.1246/cl.2002.742
URL : https://hal.archives-ouvertes.fr/hal-01245589
) nanocrystalline thin films, J. Mater. Chem., vol.48, issue.49, pp.1413-1419, 2003. ,
DOI : 10.1039/B302600K
Ceramic Composites of Monazite and Alumina, Journal of the American Ceramic Society, vol.43, issue.1, pp.1553-1563, 1995. ,
DOI : 10.1016/0020-7683(89)90021-8
Croissance par ablation laser et propriétés de guides d'ondes d'oxydes dopes terres rares, Thèse de l'université Paris 6 -Pierre et Marie Curie, 2003. ,
Electron Energy Loss Spectroscopy) Gatan imaging filter (GIF200) permettant de détecter la présence d'élements dans l'échantillon selon des énergies d'excitation particulières. Nous présentons dans le manuscrit le cas d'un échantillon excité à une énergie de 284 eV qui correspond au seuil d'absorption du carbone, Cela nous permet de mesurer la répartition de carbone dans l'échantillon ,
Chemistry of the Solid Water Interface, 1992. ,
The preparation of flat H???Si(111) surfaces in 40% NH4F revisited, Electrochimica Acta, vol.45, issue.28, pp.4591-4598, 2000. ,
DOI : 10.1016/S0013-4686(00)00610-1
Alkyl monolayers covalently bonded to silicon surfaces, Journal of the American Chemical Society, vol.115, issue.26, p.12631, 1993. ,
DOI : 10.1021/ja00079a071
High-Resolution X-Ray Scattering from Thin Films and Multilayers, p.149, 2004. ,
X-ray and neutron scattering from rough surfaces, Physical Review B, vol.38, issue.4, p.2297, 1998. ,
DOI : 10.1103/PhysRevB.38.2297
Electronic Structure and Optical Properties of Semiconductors, Solid-State Sciences, vol.75, 2001. ,
Handbook of Silicon Semiconductor Metrology, 2001. ,
Ion Beam Methods, Handbook of Silicon Semiconductor Metrology, 28. A. C. Diebold. Marcel Dekker, 2001. ,
DOI : 10.1201/9780203904541.ch28
Principles of Colloid and Surface Chemistry, 1997. ,
DOI : 10.1201/9781315274287