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Dépôt de couches minces de silicium à grande vitesse par plasma MDECR.

Abstract : In this thesis, the characteristics of plasmas were studied in MDECR using measurements of optical emission (OES) mass spectroscopy (QMS) and Langmuir probe plane. These techniques combined with observations on the pressure with and without plasma allowed us to build a clear picture on the chemical and physical properties of plasmas MDECR including silane plasmas. Because operating conditions at low pressure (~ mTorr), high power (~ kW) and because of the electronic confinement effect due to the SOD, the electron distribution in the plasma is divided into two families: a family of electron Quick and another of cold electrons. The OES measurements of argon plasma and silane showed containment of fast electrons in the ECR zones around each antenna, the entire plasma chemistry (dissociation, excitation and ionization) occurs mainly in these areas . The planar Langmuir probe measurements showed that the temperature of cold electrons is in the range 1-2 eV which is in good agreement with the results of the team of S. Béchu. These measures (OES, QMS, Langmuir probe) and pressure measurements have shown the presence of very large atomic hydrogen ions in a plasma of silane. The mass spectroscopy measurements showed that in a plasma of silane, the presence of radicals and ions based on Si, SiH and SiH2 is as important as radicals SiH3. The contribution of these radicals and ions with a high coefficient of adhesion to the film growth was also observed in studies of deposit through a mask containing small holes. All measurements have shown that for a silane plasma, a report "total power / gas flow" low favors the formation of radicals SiH3, while a report on "power / gas flow" makes great report [SiH *] / [Hα] small. This suggests that conditions of high power, low flow of silane promote the deposit of microcrystalline material while conditions of low power, high gas flow rates should encourage the formation of an amorphous material.
keyword : Plasma MDECR
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Submitted on : Tuesday, July 27, 2010 - 3:17:44 PM
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  • HAL Id : pastel-00003255, version 1



Thien Hai Dao. Dépôt de couches minces de silicium à grande vitesse par plasma MDECR.. Physique [physics]. Ecole Polytechnique X, 2007. Français. ⟨pastel-00003255⟩



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