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Etude des effets d'irradiation dans le polytype cubique du carbure de silicium par les techniques spectroscopiques de photoluminescence et de résonance paramagnétique électronique.

Abstract : This experimental work involved the study of point defects induced by electron irradiation in the crystal structure of cubic silicon carbide (SiC) using spectroscopic techniques at low temperature photoluminescence (LTPL) and electron spin resonance (ESR) . The first of these measurement tools has allowed to estimate the energy seujl displacement in the silicon sub-network and then analyze the thermal stability of radiation defects in the field of low temperatures (10 - 300K) then range of high temperatures (300 - 1400 K). Moreover, on the basis of a recent theoretical model, this thesis has confirmed the proposal of the isolated silicon antisite center D! One whose persistence beyond the design operating temperature nuclear fission reactors of Generation IV, which is partly intended SiC, is particularly problematic. Measures taken by EPR under illumination were finally allowed to detect a new defect in its metastable state spin S = 1, possibly associated with a configuration of interstitial silicon.
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https://pastel.archives-ouvertes.fr/pastel-00003496
Contributor : Ecole Polytechnique <>
Submitted on : Tuesday, July 27, 2010 - 2:57:14 PM
Last modification on : Friday, October 23, 2020 - 4:50:58 PM
Long-term archiving on: : Thursday, October 28, 2010 - 5:02:15 PM

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Jérémie Lefevre. Etude des effets d'irradiation dans le polytype cubique du carbure de silicium par les techniques spectroscopiques de photoluminescence et de résonance paramagnétique électronique.. Physique [physics]. Ecole Polytechnique X, 2008. Français. ⟨pastel-00003496⟩

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