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Développement, contrôle et modélisation d'un procédé de projection de poudres de silicium par plasma RF - Application aux couches minces photovoltaïques

Abstract : The aim of this work is the development of a plasma spraying process of metallurgical silicon powder in order to elaborate a thin silicon layer with photovoltaïc properties. In this process, particles are injected in the axis of the plasma flow, melted and purified in flight before deposing on a ceramic substrate as liquid droplet. The silicon deposit has been characterised by ICP and EDX analysis, and the hydrogenation phenomena has been analysed by the exodiffusion technique. Excited species and energetic characterisation of the argon + 1%H2 plasma flow have been studied by optical emission spectroscopy. Measurements showed highly excited states of hydrogen atoms which are responsible of the passivation of the crystallographic defects. Moreover, the detection of silicon and impurities emission lines confirms the in-flight purification of the silicon powder. The energetic diagnostic of the plasma flow showed that the density and the electronic temperature were maximum on the inductive zone. The properties of plasma were also determined by numerical modelling. The profiles obtained permit to interpret the heat and mass transfer phenomena between the silicon particles and hydrogenated plasma flow. These interactions have been analysed by laser Doppler metrology measurements. Results show that the particles undergo a loss of 12% of mass after a residence time of 15 ms in the plasma.
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Contributor : Ecole Chimie Paristech <>
Submitted on : Friday, April 10, 2009 - 8:00:00 AM
Last modification on : Friday, April 10, 2009 - 8:00:00 AM
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Malek Benmansour. Développement, contrôle et modélisation d'un procédé de projection de poudres de silicium par plasma RF - Application aux couches minces photovoltaïques. Chemical Sciences. Chimie ParisTech, 2003. English. ⟨pastel-00004992⟩

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