« On the conduction of electricity in solid elements and compounds, p.179, 1910. ,
Electroluminescence in Organic Crystals, Electroluminescence in organic crystals, pp.2042-2043, 1963. ,
DOI : 10.1063/1.1733929
Light-emitting diodes based on conjugated polymers, Light-emitting diodes based on conjugated polymers, pp.539-541, 1990. ,
DOI : 10.1038/347539a0
Kelvin probe study of band bending at organic semiconductor/metal interfaces: examination of Fermi level alignment, physica status solidi (a), vol.201, issue.6, pp.1075-1094, 2004. ,
DOI : 10.1002/pssa.200404346
Electron Emission from Metals as a Function of Temperature, Physical Review, vol.21, issue.6, pp.623-636, 1923. ,
DOI : 10.1103/PhysRev.21.623
Device model for single carrier organic diodes, Journal of Applied Physics, vol.82, issue.12, pp.12-6319, 1997. ,
DOI : 10.1063/1.366522
Organic light-emitting diodes with doped charge transport layers, Thèse de doctorat, 2001. ,
-conjugated molecular films, Journal of Physics: Condensed Matter, vol.15, issue.38, pp.2757-2770, 2003. ,
DOI : 10.1088/0953-8984/15/38/014
URL : https://hal.archives-ouvertes.fr/in2p3-00309474
Interface electronic structure of organic semiconductors with controlled doping levels, Organic Electronics, vol.2, issue.2, pp.97-104, 2001. ,
DOI : 10.1016/S1566-1199(01)00016-7
Bright organic electroluminescent devices having a metal-doped electron-injecting layer, Applied Physics Letters, vol.73, issue.20, p.2866, 1998. ,
DOI : 10.1063/1.122612
Doped organic semiconductors: Physics and application in light emitting diodes, Organic Electronics, vol.4, issue.2-3, pp.89-103, 2003. ,
DOI : 10.1016/j.orgel.2003.08.004
Substrate effects on the electronic properties of an organic/organic heterojunction, Applied Physics Letters, vol.88, issue.23, p.232103, 2006. ,
DOI : 10.1063/1.2209212
Fermi-level pinning at conjugated polymer interfaces, Fermi-level pinning at conjugated polymer interfaces, p.53502, 2006. ,
DOI : 10.1063/1.2168515
Electronic structures of organic/organic heterojunctions: From vacuum level alignment to Fermi level pinning, Journal of Applied Physics, vol.101, issue.6, p.64504, 2007. ,
DOI : 10.1063/1.2710297
Current injection from a metal to a disordered hopping system. II. Comparison between analytic theory and simulation, Physical Review B, vol.59, issue.11, pp.59-7514, 1999. ,
DOI : 10.1103/PhysRevB.59.7514
Charge injection into light-emitting diodes: Theory and experiment, Journal of Applied Physics, vol.84, issue.2, pp.848-856, 1998. ,
DOI : 10.1063/1.368146
« One-dimensional Onsager theory for carrier injection in metalinsulator systems, Phys. Rev. B, issue.9, pp.5183-5187, 1974. ,
Current injection in solids, 1970. ,
« A discussion of conduction in organic lightemitting diodes, Appl. Surf. Sci, pp.212-213, 2003. ,
Electrical doping of organic molecular semiconductors, Thèse de doctorat, 2004. ,
Current???voltage characteristic of organic light emitting diodes, Applied Physics Letters, vol.72, issue.23, pp.23-3038, 1998. ,
DOI : 10.1063/1.121533
Injection- and space charge limited-currents in doped conducting organic materials, Journal of Applied Physics, vol.89, issue.7, pp.3804-3810, 2001. ,
DOI : 10.1063/1.1352677
Numerical model for organic light-emitting diodes, Journal of Applied Physics, vol.89, issue.1, pp.430-439, 2001. ,
DOI : 10.1063/1.1327286
Physics of Organic Semiconductors, 2005. ,
Amorphous organic devices??degenerate semiconductors, Journal of Physics: Condensed Matter, vol.14, issue.42, pp.14-9913, 2002. ,
DOI : 10.1088/0953-8984/14/42/306
Alkali metal doping and energy level shift in organic semiconductors, Applied Surface Science, vol.252, issue.11, pp.3943-3947, 2006. ,
DOI : 10.1016/j.apsusc.2005.09.071
Upper Limit of Electron Effective Mass in Organic Semiconductors, The Journal of Chemical Physics, vol.56, issue.10, pp.4911-4916, 1972. ,
DOI : 10.1063/1.1676968
Ordered growth and crystal structure of Alq 3 on alkali halide surfaces, Jpn. J. Appl. Phys, vol.40, pp.3-225, 2001. ,
Semiconductor devices : Physics and Technology, 1985. ,
DOI : 10.1002/0470068329
URL : http://dx.doi.org/10.1016/s1369-7021(03)00132-9
Solid State Physics, 1988. ,
Generalized Einstein relation for disordered semiconductors???implications for device performance, Applied Physics Letters, vol.80, issue.11, pp.1948-1950, 2002. ,
DOI : 10.1063/1.1461419
Generalized Einstein relation for disordered semiconductors with exponential distributions of tail states and square-root distributions of band states, Applied Physics Letters, vol.83, issue.10, p.10, 1998. ,
DOI : 10.1063/1.1604178
Einstein relation in chemically doped organic semiconductors, Applied Physics A, vol.71, issue.2, pp.86-225, 2007. ,
DOI : 10.1007/s00339-006-3747-1
Measurements of the Einstein relation in doped and undoped molecular thin films, Physical Review B, vol.77, issue.20, p.201201, 2008. ,
DOI : 10.1103/PhysRevB.77.201201
Drift mobilities in amorphous charge-transfer complexes of trinitrofluorene and poly-n-vinylcarbazole, J. Appl. Phys, vol.43, pp.12-5033, 1972. ,
« Polarons in ?-conjugated semiconductors : absorption spectroscopy and spin-dependent recombination », phys. stat. sol, pp.1188-1204, 2004. ,
High-field mobility in an assembly of conjugated polymer segments, Physical Review B, vol.54, issue.7, pp.4674-4679, 1996. ,
DOI : 10.1103/PhysRevB.54.4674
Charge Transport in Disordered Organic Photoconductors a Monte Carlo Simulation Study, physica status solidi (b), vol.35, issue.1, p.15, 1993. ,
DOI : 10.1002/pssb.2221750102
Essential Role of Correlations in Governing Charge Transport in Disordered Organic Materials, Physical Review Letters, vol.81, issue.20, pp.20-4472, 1998. ,
DOI : 10.1103/PhysRevLett.81.4472
High-field hopping mobility in molecular systems with spatially correlated energetic disorder, Chemical Physics Letters, vol.245, issue.4-5, pp.351-358, 1995. ,
DOI : 10.1016/0009-2614(95)01031-4
Brownian motion field dependent mobility theory of hopping transport process, Journal of Applied Physics, vol.99, issue.11, p.114512, 2006. ,
DOI : 10.1063/1.2201852
Effective temperature for hopping transport in a Gaussian density of states, Physical Review B, vol.77, issue.19, 2008. ,
DOI : 10.1103/PhysRevB.77.195211
Charge carrier mobility in doped semiconducting polymers, Applied Physics Letters, vol.82, issue.19, pp.19-3245, 2003. ,
DOI : 10.1063/1.1572965
Local order in amorphous organic molecular thin films, Chemical Physics Letters, vol.347, issue.4-6, pp.297-303, 2001. ,
DOI : 10.1016/S0009-2614(01)01063-6
Statistics of the Recombinations of Holes and Electrons, Physical Review, vol.87, issue.5, pp.835-842, 1952. ,
DOI : 10.1103/PhysRev.87.835
Comparison of models of electroluminescence in organic double-layer light-emitting diodes, Journal of Applied Physics, vol.92, issue.5, pp.2359-2367, 2002. ,
DOI : 10.1063/1.1497717
Two-dimensional electron-hole capture in a disordered hopping system, Physical Review B, vol.68, issue.24, p.245301, 2003. ,
DOI : 10.1103/PhysRevB.68.245301
Recombination at heterojunctions in disordered organic media: Modeling and numerical simulations, Physical Review B, vol.77, issue.16, p.165304, 2008. ,
DOI : 10.1103/PhysRevB.77.165304
Excited states and photochemistry of organic molecules, VCH publishers, 1995. ,
Excitonic singlet-triplet ratio in a semiconducting organic thin film, Physical Review B, vol.60, issue.20, pp.20-14422, 1999. ,
DOI : 10.1103/PhysRevB.60.14422
Optimization of external coupling and light emission in organic light-emitting devices: modeling and experiment, Journal of Applied Physics, vol.91, issue.2, pp.595-604, 2002. ,
DOI : 10.1063/1.1425448
Theory of optical-environment-dependent spontaneous-emission rates for emitters in thin layers, Physical Review B, vol.22, issue.6, pp.3030-3038, 1980. ,
DOI : 10.1103/PhysRevB.22.3030
Tuning the emission characteristics of top-emitting organic light-emitting devices by means of a dielectric capping layer: An experimental and theoretical study, Journal of Applied Physics, vol.94, issue.8, pp.5290-5296, 2003. ,
DOI : 10.1063/1.1605256
Electromagnetics of continuous media, 1960. ,
Radiation from oscillating dipoles embedded in a layered system, The Journal of Chemical Physics, vol.89, issue.10, pp.6017-6027, 1988. ,
DOI : 10.1063/1.455416
Theory of the radiation of dipoles placed within a multilayer system, Applied Optics, vol.39, issue.22, pp.3968-3977, 2000. ,
DOI : 10.1364/AO.39.003968
Light-emitting diodes based on conjugated polymers, Light-emitting diodes based on conjugated polymers, pp.539-541, 1990. ,
DOI : 10.1038/347539a0
Device model for single carrier organic diodes, Journal of Applied Physics, vol.82, issue.12, pp.12-6319, 1997. ,
DOI : 10.1063/1.366522
Device model investigation of single layer organic light emitting diodes, Journal of Applied Physics, vol.84, issue.2, pp.833-842, 1998. ,
DOI : 10.1063/1.368144
Simulation of organic light-emitting diodes, Synthetic Metals, vol.111, issue.112, pp.111-112, 2000. ,
DOI : 10.1016/S0379-6779(99)00359-8
The roles of injection and mobility in organic light emitting diodes, Journal of Applied Physics, vol.83, issue.10, pp.5399-5403, 1998. ,
DOI : 10.1063/1.367369
A numerical study of operational characteristics of organic light-emitting diodes, Journal of Applied Physics, vol.84, issue.9, pp.5306-5314, 1998. ,
DOI : 10.1063/1.368779
Physical mechanisms in double-carrier trap-charge limited transport processes in organic electroluminescent devices: A numerical study, Journal of Applied Physics, vol.83, issue.12, pp.7706-7714, 1998. ,
DOI : 10.1063/1.367942
Transient electroluminescence of polymer light emitting diodes using electrical pulses, Journal of Applied Physics, vol.86, issue.9, pp.5116-5130, 1999. ,
DOI : 10.1063/1.371488
Electrical transport characteristics of single-layer organic devices from theory and experiment, Journal of Applied Physics, vol.98, issue.6, p.63709, 2005. ,
DOI : 10.1063/1.2058199
Device model investigation of bilayer organic light emitting diodes, Journal of Applied Physics, vol.87, issue.4, pp.1974-1982, 2000. ,
DOI : 10.1063/1.372123
Transient and steady-state behavior of space charges in multilayer organic light-emitting diodes, Journal of Applied Physics, vol.89, issue.8, pp.4575-4585, 2001. ,
DOI : 10.1063/1.1352027
The internal electric field distribution in bilayer organic light emitting diodes, Organic Electronics, vol.3, issue.3-4, pp.129-141, 2002. ,
DOI : 10.1016/S1566-1199(02)00050-2
Numerical simulation of optical and electronic properties for multilayer organic light-emitting diodes and its application in engineering education, Light-Emitting Diodes: Research, Manufacturing, and Applications X, pp.6134-187, 2006. ,
DOI : 10.1117/12.645482
Numerical Simulation of Electrical Model for Organic Light-Emitting Devices with Fluorescent Dopant in the Emitting Layer, Japanese Journal of Applied Physics, vol.44, issue.11, pp.8147-8152, 2005. ,
DOI : 10.1143/JJAP.44.8147
Electrical and optical simulation of organic light-emitting devices with fluorescent dopant in the emitting layer, Journal of Applied Physics, vol.101, issue.11, p.114501, 2007. ,
DOI : 10.1063/1.2738445
« Simulation of the external quantum efficiency for bilayer organic light-emitting devices, Org. Light-Emitt. Mat. Dev. VII, pp.5214-300, 2004. ,
Matters, « Theory of the field-effect mobility in amorphous organic transistors, Phys. Rev. B, vol.57, p.20, 1998. ,
Numerical model for organic light-emitting diodes, Journal of Applied Physics, vol.89, issue.1, pp.430-439, 2001. ,
DOI : 10.1063/1.1327286
Limitation imposed by field clamping on the efficiency of high???field ac electroluminescence in thin films, Journal of Applied Physics, vol.43, issue.10, p.4089, 1972. ,
DOI : 10.1063/1.1660878
« Electrical model for amorphous/crystalline heterojunction silicon diodes, Semicond. Sci. Technol, issue.11, pp.1209-1213, 1996. ,
DOI : 10.1088/0268-1242/11/8/016
« Time dependant parallel resistance in an organic Schottky contact, Mater. Res. Soc. Symp. Proc, p.871, 2005. ,
diodes, Journal of Applied Physics, vol.90, issue.2, p.994, 2001. ,
DOI : 10.1063/1.1379560
Bulk limited conduction in electroluminescent polymer devices, Bulk limited conduction in electroluminescent polymer devices, pp.6737-6746, 1998. ,
DOI : 10.1063/1.369001
Injection- and space charge limited-currents in doped conducting organic materials, Journal of Applied Physics, vol.89, issue.7, pp.3804-3810, 2001. ,
DOI : 10.1063/1.1352677
Current???voltage characteristic of organic light emitting diodes, Applied Physics Letters, vol.72, issue.23, pp.23-3038, 1998. ,
DOI : 10.1063/1.121533
A theoretical model for carrier transport in disordered organic materials, Synthetic Metals, vol.111, issue.112, pp.111-112, 2000. ,
DOI : 10.1016/S0379-6779(99)00365-3
Relationship between Surface Roughness of Indium Tin Oxide and Leakage Current of Organic Light-Emitting Diode, Japanese Journal of Applied Physics, vol.42, issue.Part 2, No. 4B ,
DOI : 10.1143/JJAP.42.L438
« Temperature-dependant built-in potential in organic semiconductors devices, Appl. Phys. Lett, vol.88, 2006. ,
Semiconductor devices : Physics and Technology, 1985. ,
DOI : 10.1002/0470068329
URL : http://dx.doi.org/10.1016/s1369-7021(03)00132-9
Electron and hole mobilities in silicon as a function of concentration and temperature, IEEE Transactions on Electron Devices, vol.29, issue.2, pp.29-292, 1982. ,
DOI : 10.1109/T-ED.1982.20698
Temperature Effect on Current???Voltage Characteristics of Molecular Organic Tris(8-hydroxyquinoline) Aluminium Complex, Japanese Journal of Applied Physics, vol.45, issue.10A, pp.7621-7624, 2006. ,
DOI : 10.1143/JJAP.45.7621
Organic light-emitting diodes with doped charge transport layers, Thèse de doctorat, 2001. ,
Numerical simulation of impedance and admittance of OLEDs, physica status solidi (a), vol.201, issue.112, pp.1901-1914, 2006. ,
DOI : 10.1002/pssa.200622014
:6)];%RSCLC [iout_D1,ind_D1]=oled_modeling(Vech,Y1,imaxP,option), %D1 Y2=[parameters(1),0,parameters(3:4),Inf%D1 [iout_D1D2,ind_D1D2]=oled_modeling, p.2 ,
:)),'pchip');%do not take values <Vi(1) (otherwise non bijectivity of ,
);grid on ,
14);ylabel(sprintf('%s \n %s','relative error (%) ,
-sb');xlim([Imin Imax]);grid on; set(G6,'LineWidth',3);... xlabel('current density (mA/cm^2), p.14 ,
10) xlabel16);ylabel('Fit, J en mA/cm^2','fontsize',16);grid on file23:08] u XIV B.2. matlab main title(filename) set(gcf,'Name','Fit après optimisation');%gcf : get current figure legend('Gross measures','Sampling measures','Initial extraction, 2008. ,
title(filename) set(G310);xlabel('Voltage (V)','fontsize',16);... ylabel('Current density J (mA/cm^2)','fontsize',16);grid on set(gcf,'Name','Optimized fitting');%gcf : get current figure legend, SouthEast') h=text(Vi(1),3*Imax ,
,3);grid on ,
14);ylabel(sprintf('%s \n %s','relative error (%) ,
-sb');xlim([Imin Imax]);grid on; set(G6,'LineWidth',3);... xlabel('current density (mA/cm^2), p.14 ,
title(filename) set(G310);xlabel('Voltage (V)','fontsize',16);... ylabel('Current density J (mA/cm^2)','fontsize',16);grid on set(gcf,'Name','Optimized fitting');%gcf : get current figure legend, p.2 ,
);grid on ,
14);ylabel(sprintf('%s \n %s','relative error (%) ,
-sb');xlim([Imin Imax]);grid on; set(G6,'LineWidth',3);... xlabel('current density (mA/cm^2), p.14 ,
0,parameters(5:6)]; [iout_D,ind_D]=oled_modeling(Vech,YD,imaxP,option);%Diode [iout_SCLC,ind_SCLC]=oled_modeling(Vech,YSCLC,imaxP,option) ,
5);... grid on;xlim([Imin Imax]);ylim, p.10 ,
14);ylabel(sprintf('%s \n %s','relative error (%) ,
-sk');xlim([Imin Imax]);grid on; set(G6,'LineWidth',3);... xlabel('current density (mA/cm^2), p.14 ,
^lb(3:N)];pmin=pmin';%Vbi excluded (constant) pmax=[10.^ub(1), ^ub, vol.1010103, issue.1 ,
%s \n %s \n %s','model 1=metal/orga Diode D1 + orga/orga Diode D2 + RSCLC -6 parameters-','model 2 =Vbi + orga/orga Diode D + RSCLC - 5 parameters ,
Select the model ,
Extraction of metal/orga diode D1 : N1 fixed, Js1~' dispstr(Is1,1)]) ,
Extraction of orga/orga diode D2 : Js2~' dispstr(Is2,1) ', N2~' dispstr(N2 ,
Extraction of RSCLC : K~' dispstr(K,1) ', m~' dispstr(m,0)]); paratmp= ,
Extraction of built-in voltage : Vbi~' dispstr(Vbi, Model, vol.2 ,
Extraction of diode D : Js~' dispstr(Is2,1) ', N~' dispstr(N2 ,
Extraction of RSCLC : K~' dispstr(K,1) ', m~' dispstr(m,0)]); paratmp= ,
Extraction of diode D : Is~' dispstr(Is2,1) ', N~' dispstr(N2 ,
Extraction of RSCLC : K~' dispstr(K,1) ', m~' dispstr(m,0)]); paratmp= ,
Calculation in progress...'); c1=clock; V_tmp=Vmes(a12:a32); i_tmp=imes(a12:a32) ,
Extraction of the shunt resistance : Rp~' dispstr(Rp ,
Extraction of the built-in voltage : Vbi~' dispstr(Vbi ,
%Assumption: SCLC negligible here i_D=i_D_tmp-V_D_tmp./Rp; index=find(i_D>=0);i_D=i_D(index(:)) ,
Extraction of diode (D) : Is~' dispstr(Is,1) ', N~' dispstr ,
Extraction of RSCLC : K~' dispstr(K,1) ', m~' dispstr(m ,
Calculation in progress...'); c1=clock; V_tmp=Vmes(a1:a4); i_tmp=imes(a1:a4) ,
^(1/m) + (N*kB*T/q)*log(1+ia, Is) + (Ns*kB*T/q)*log ,
^(1/m)+(N*kB*T/q)*log(1+ia./Is)+Vbi;%voltage at the main branch M=, Vmes, vol.1, issue.112 ,
^(1/m)+(N*kB*T/q)*log(1+ia ,
Vbi,10)Vb=Vb';ib=Vb./Rp; ia=10.^(alpha:0.075:4);%alpha is not pertinent if leakage current is important, ia=ia, issue.0, pp.10-16 ,
^(1/m)+(N*kB*T/q)*log(1+ia./Is)+ Vbi; if Rp==Inf M=, Vmes, vol.1, issue.12 ,
[Vb;Va],[ib;ia]];%good method if iRp<<ia M=sortrows(M,1) ,
Vbi-0.15,10);Vbshunt=Vbshunt'; ibshunt=Vbshunt ,
134)Vb=Vb';ib=Vb./Rp; %(Vb,ib) ok ia=10) ,
^(1/m)+(N*kB*T/q)*log(1+ia./Is)+ Vbi; %(Va,ia) ok if Rp==Inf M=, Vmes, vol.1, issue.12 ,