R. T. Ross and A. J. Nozik, Eciency of hot-carrier solar energy converters

A. Othonos, Probing ultrafast carrier and phonon dynamics in semiconductors, Journal of Applied Physics, vol.83, issue.4, p.1789, 1998.
DOI : 10.1063/1.367411

M. A. Green, Third generation photovoltaics -Advanced solar energy conversion, 2003.
DOI : 10.1109/pvsc.2002.1190855

D. Trivich and P. Flinn, Maximum eciency of solar energy conversion by quantum process, Solar Energy Research, p.143147, 1955.

W. Shockley and H. J. Queisser, Junction Solar Cells, Journal of Applied Physics, vol.32, issue.3, p.510, 1961.
DOI : 10.1063/1.1736034

M. Neges, K. Schwarzburg, and F. Willig, Monte carlo simulation of energy loss and collection of hot charge carriers, rst step towards a more realistic hot-carrier solar energy converter, Solar Energy Materials and Solar Cells, issue.14, pp.902107-2128, 2006.

B. K. Ridley, Quantum processes in semiconductors, 1999.
DOI : 10.1093/acprof:oso/9780199677214.001.0001

J. Shah, P. Pinczuk, A. C. Gossard, and W. Wiegmann, Energy-Loss Rates for Hot Electrons and Holes in GaAs Quantum Wells, Physical Review Letters, vol.54, issue.18, p.2045, 1985.
DOI : 10.1103/PhysRevLett.54.2045

P. Würfel, A. S. Brown, T. E. Humphrey, and M. A. Green, Particle conservation in the hot-carrier solar cell, Progress in Photovoltaics: Research and Applications, vol.15, issue.4, p.277, 2005.
DOI : 10.1002/pip.584

M. Pugnet, J. Collet, and A. Cornet, Cooling of hot electron-hole plasmas in the presence of screened electron-phonon interactions, Solid State Communications, vol.38, issue.6, p.531536, 1981.
DOI : 10.1016/0038-1098(81)90431-2

W. Pötz and P. Kocevar, Electronic power transfer in pulsed laser excitation of polar semiconductors, Physical Review B, vol.28, issue.12, p.7040, 1983.
DOI : 10.1103/PhysRevB.28.7040

R. Ulbrich, Energy Relaxation of Photoexcited Hot Electrons in GaAs, Physical Review B, vol.8, issue.12, p.5719, 1973.
DOI : 10.1103/PhysRevB.8.5719

A. Luque and A. Martí, Electron???phonon energy transfer in hot-carrier solar cells, Solar Energy Materials and Solar Cells, vol.94, issue.2, p.287296, 2010.
DOI : 10.1016/j.solmat.2009.10.001

G. Conibeer, C. W. Jiang, M. Green, N. Harder, and A. Straub, Selective energy contacts for potential application to hot carrier PV cells, Photovoltaic Energy Conversion Proceedings of 3rd World Conference on, p.2730, 2003.

C. W. Jiang, M. A. Green, E. Cho, and G. Conibeer, Resonant tunneling through defects in an insulator: Modeling and solar cell applications, Journal of Applied Physics, vol.96, issue.9, p.5006, 2004.
DOI : 10.1063/1.1797542

R. Landauer, Conductance from transmission: common sense points, Physica Scripta, vol.42, p.110, 1992.
DOI : 10.1088/0031-8949/1992/T42/020

M. Büttiker, Y. Imry, R. Landauer, and S. Pinhas, Generalized many-channel conductance formula with application to small rings, Physical Review B, vol.31, issue.10, p.6207, 1985.
DOI : 10.1103/PhysRevB.31.6207

M. Büttiker, Four-Terminal Phase-Coherent Conductance, Physical Review Letters, vol.57, issue.14, p.1761, 1986.
DOI : 10.1103/PhysRevLett.57.1761

Y. Imry and R. Landauer, Conductance viewed as transmission, Reviews of Modern Physics, vol.71, issue.2, p.306, 1999.
DOI : 10.1103/RevModPhys.71.S306

S. Datta, Electronic transport in mesoscopic systems, 1995.

L. Chang, L. Esaki, and R. Tsu, Resonant tunneling in semiconductor double barriers, Applied Physics Letters, vol.24, issue.12, p.593, 1974.
DOI : 10.1063/1.1655067

S. Yagi and Y. Okada, Fabrication of resonant tunneling structures for selective energy contact of hot carrier solar cell based on IIIV semiconductors, Photovoltaic Specialists Conference (PVSC), pp.35-001216, 2010.

G. Chen, G. Klimeck, and S. Datta, Resonant tunneling through quantum-dot arrays, Physical Review B, vol.50, issue.11, p.8035, 1994.
DOI : 10.1103/PhysRevB.50.8035
URL : http://docs.lib.purdue.edu/cgi/viewcontent.cgi?article=1788&context=nanopub

G. Conibeer, C. W. Jiang, D. König, S. Shestha, T. Walsh et al., Selective energy contacts for hot carrier solar cells. Thin solid lms, p.6968, 2008.

C. W. Jiang, M. A. Green, E. Cho, and G. Conibeer, Resonant tunneling through defects in an insulator: modeling and solar cells applications Detailed balance limit of eciency of p-n junction solar cells, Journ. Appl. Phys. Journ. Appl. Phys, vol.96, issue.32, p.5006510, 1961.

R. T. Ross and A. J. Nozik, Eciency of hot-carrier solar energy converters

Y. Takeda, T. Ito, T. Motohiro, D. König, S. Shrestha et al., Hot carrier solar cells operating under practical conditions, Journal of Applied Physics, vol.105, issue.7, p.74905, 2009.
DOI : 10.1063/1.3086447

M. F. O-'dwyer, T. E. Humphrey, R. A. Lewis, and C. Zhang, Electronic and thermal transport in hot carrier solar cells with low-dimensional contacts, Microelectronics Journal, vol.39, p.656659, 2008.

J. Shah and R. C. Leite, Radiative Recombination from Photoexcited Hot Carriers in GaAs, Physical Review Letters, vol.22, issue.24, p.1304, 1969.
DOI : 10.1103/PhysRevLett.22.1304

S. A. Lyon, Spectroscopy of hot carriers in semiconductors, Journal of Luminescence, vol.35, issue.3, p.121, 1986.
DOI : 10.1016/0022-2313(86)90066-9

J. Shah, Photoexcited hot carriers: From cw to 6 fs in 20 years, Solid-State Electronics, vol.32, issue.12, p.1051, 1989.
DOI : 10.1016/0038-1101(89)90189-5

R. Ulbrich, Low density photoexcitation phenomena in semiconductors: Aspects of theory and experiment, Solid-State Electronics, vol.21, issue.1, p.51, 1978.
DOI : 10.1016/0038-1101(78)90114-4

D. Mirlin, I. Karlik, L. Nikitin, I. Reshina, and V. Sapega, Hot electron photoluminescence in GaAs crystals, Solid State Communications, vol.37, issue.9, pp.757-760, 1981.
DOI : 10.1016/0038-1098(81)91094-2

A. Othonos, Probing ultrafast carrier and phonon dynamics in semiconductors, Journal of Applied Physics, vol.83, issue.4, p.1789, 1998.
DOI : 10.1063/1.367411

R. Ulbrich, Energy Relaxation of Photoexcited Hot Electrons in GaAs, Physical Review B, vol.8, issue.12, p.5719, 1973.
DOI : 10.1103/PhysRevB.8.5719

J. Shah, W. Leheny, and . Wiegmann, Low-temperature absorption spectrum in GaAs in the presence of optical pumping, Physical Review B, vol.16, issue.4, p.15771580, 1977.
DOI : 10.1103/PhysRevB.16.1577

C. V. Shank, R. L. Fork, R. F. Leheny, and J. Shah, Dynamics of Photoexcited GaAs Band-Edge Absorption with Subpicosecond Resolution, Physical Review Letters, vol.42, issue.2, p.112, 1979.
DOI : 10.1103/PhysRevLett.42.112

D. , V. Der-linde, and R. Lambrich, Direct measurement of hot-electron relaxation by picosecond spectroscopy, Phys. Rev. Lett, vol.42, p.1090, 1979.

S. Tanaka, H. Kobayashi, H. Saito, and S. Shionoya, Luminescence of High Density Electron-Hole Plasma in GaAs, Journal of the Physical Society of Japan, vol.49, issue.3, p.1051, 1980.
DOI : 10.1143/JPSJ.49.1051

K. Kash and J. Shah, Carrier energy relaxation in In 0.53 Ga 0.47 As determined from picosecond luminescence studies, Applied Physics letters, vol.45, issue.4, p.401403, 1984.

J. Shah, B. Tc-damen, D. Deveaud, and . Block, Subpicosecond luminescence spectroscopy using sum frequency generation, Applied Physics Letters, vol.50, issue.19, p.5013071309, 1987.
DOI : 10.1063/1.97890

J. Shah, B. Deveaud, . Tc-damen, . Tsang, P. Gossard et al., Determination of intervalley scattering rates in GaAs by subpicosecond luminescence spectroscopy. Physical review letters, p.5922222225, 1987.

T. Elsaesser, J. Shah, L. Rota, and P. Lugli, Initial thermalization of photoexcited carriers in GaAs studied by femtosecond luminescence spectroscopy. Physical review letters, p.6617571760, 1991.

R. F. Leheny, J. Shah, R. L. Fork, and C. V. Shank, Dynamics of hot carrier cooling in photo-excited GaAs, Solid State Communications, vol.31, issue.11, p.809, 1979.
DOI : 10.1016/0038-1098(79)90393-4

Y. Rosenwaks, M. C. Hanna, D. H. Levi, D. M. Szmyd, R. K. Ahrenkiel et al., Hot-carrier cooling in GaAs: Quantum wells versus bulk, Physical Review B, vol.48, issue.19, p.14675, 1993.
DOI : 10.1103/PhysRevB.48.14675

R. Seymour, M. Junnarkar, and R. Alfano, Slowed picosecond kinetics of hot photogenerated carriers in GaAs, Solid State Communications, vol.41, issue.9, pp.657-660, 1982.
DOI : 10.1016/0038-1098(82)90725-6

R. C. Leite, Radiative spectra from hot photocarriers, Solid-State Electronics, vol.21, issue.1, p.177178, 1978.
DOI : 10.1016/0038-1101(78)90134-X

D. Von-der-linde, J. Kuhl, and H. Klingenberg, Raman Scattering from Nonequilibrium LO Phonons with Picosecond Resolution, 25] J. Collet, A. Cornet, M. Pugnet, and T. Amand. Cooling of high density electron-hole plasma. Solid State Communications, pp.15051508-42883887, 1980.
DOI : 10.1103/PhysRevLett.44.1505

W. Pötz and P. Kocevar, Electronic power transfer in pulsed laser excitation of polar semiconductors, Physical Review B, vol.28, issue.12, p.7040, 1983.
DOI : 10.1103/PhysRevB.28.7040

P. Kocevar, Hot phonon dynamics, Physica B+C, vol.134, issue.1-3, p.155163, 1985.
DOI : 10.1016/0378-4363(85)90336-5

C. V. Shank, R. L. Fork, R. Yen, J. Shah, B. I. Greene et al., Picosecond dynamics of hot carrier relaxation in highly excited multi-quantum well structures, Solid State Communications, vol.47, issue.12, p.981, 1983.
DOI : 10.1016/0038-1098(83)90982-1

Z. Xu and C. Tang, Picosecond relaxation of hot carriers in highly photoexcited bulk GaAs and GaAs???AlGaAs multiple quantum wells, Applied Physics Letters, vol.44, issue.7, p.692694, 1984.
DOI : 10.1063/1.94880

J. Ryan, R. Taylor, A. Tubereld, A. Maciel, J. Worlock et al., Time-Resolved Photoluminescence of Two-Dimensional Hot Carriers in GaAs-AlGaAs Heterostructures, Physical Review Letters, vol.53, issue.19, p.5318411844, 1984.
DOI : 10.1103/PhysRevLett.53.1841

K. Leo, W. W. Rühle, H. J. Queisser, and K. Ploog, Reduced dimensionality of hot-carrier relaxation in GaAs quantum wells, Physical Review B, vol.37, issue.12, p.7121, 1988.
DOI : 10.1103/PhysRevB.37.7121

. Gaas, Al x Ga 1?x As quantum wells, Phys. Rev. B, vol.38, 1947.

B. K. Ridley, Electron scattering by conned lo polar phonons in a quantum well, Phys. Rev. B, vol.39, issue.8, p.52825286, 1989.

J. K. Jain and S. Sarma, Role of discrete slab phonons in carrier relaxation in semiconductor quantum wells, Physical Review Letters, vol.62, issue.19, p.23052308, 1989.
DOI : 10.1103/PhysRevLett.62.2305

P. Lugli and S. M. Goodnick, Nonequilibrium longitudinal-optical phonon effects in GaAs-AlGaAs quantum wells, Physical Review Letters, vol.59, issue.6, p.716, 1987.
DOI : 10.1103/PhysRevLett.59.716

D. Westland, J. Ryan, M. Scott, J. Davies, and J. Riat, Hot carrier energy loss rates in GaInAs/InP quantum wells, Solid-State Electronics, vol.31, issue.3-4, pp.31-34, 1988.
DOI : 10.1016/0038-1101(88)90311-5

A. V. Akimov, S. A. Cavill, A. J. Kent, N. M. Stanton, T. Wag et al., Phonon emission by photoexcited carriers in InGaN/GaN multiple quantum wells, Journal of Physics: Condensed Matter, vol.14, issue.13, p.3445, 2002.
DOI : 10.1088/0953-8984/14/13/304

P. G. Klemens, Anharmonic Decay of Optical Phonons, Physical Review, vol.148, issue.2, p.845848, 1966.
DOI : 10.1103/PhysRev.148.845

G. Conibeer, D. König, M. A. Green, and J. F. Guillemoles, Slowing of carrier cooling in hot carrier solar cells, Thin Solid Films, vol.516, issue.20, p.6948, 2008.
DOI : 10.1016/j.tsf.2007.12.102

R. Patterson, M. Kirkengen, B. P. Veettil, D. Konig, G. Ma-green et al., Phonon lifetimes in model quantum dot superlattice systems with applications to the hot carrier solar cell, Solar Energy Materials and Solar Cells, 2010.
DOI : 10.1016/j.solmat.2010.06.030

V. Klimov, P. H. Bolivar, and H. Kurz, Hot-phonon effects in femtosecond luminescence spectra of electron-hole plasmas in CdS, Physical Review B, vol.52, issue.7, p.4728, 1995.
DOI : 10.1103/PhysRevB.52.4728

J. B. Rodriguez, P. Christol, L. Cerutti, F. Chevrier, and A. Joullié, MBE growth and characterization of type-II InAs/GaSb superlattices for midinfrared detection, Journal of Crystal Growth, vol.274, p.613, 2005.
URL : https://hal.archives-ouvertes.fr/hal-00327829

A. Joullié, P. Christol, A. Baranov, and A. Vicet, Mid-infrared 2-5 µm heterojunction laser diodes, Topics in Applied Physics, vol.89, p.159, 2003.

M. Born and E. Wolf, Principles of Optics: Electromagnetic Theory of Propagation , Interference and Diraction of Light, 1959.
DOI : 10.1017/CBO9781139644181

R. Ferrini, M. Patrini, and S. Franchi, Optical functions from 0.02 to 6 eV of AlxGa1???xSb/GaSb epitaxial layers, Journal of Applied Physics, vol.84, issue.8, p.4517, 1998.
DOI : 10.1063/1.368677

I. Vurgaftman, J. R. Meyer, and L. R. Ram-mohan, Band parameters for III???V compound semiconductors and their alloys, Journal of Applied Physics, vol.89, issue.11, p.5815, 2001.
DOI : 10.1063/1.1368156

B. K. Ridley, Quantum processes in semiconductors is, the smaller the dierence will be. This is another argument in favor of semiselective contacts, 1999.

]. B. Ridley, Quantum processes in semiconductors, Bibliography, issue.1, 1999.
DOI : 10.1093/acprof:oso/9780199677214.001.0001

W. Pötz and P. Kocevar, Electronic power transfer in pulsed laser excitation of polar semiconductors, Physical Review B, vol.28, issue.12, p.7040, 1983.
DOI : 10.1103/PhysRevB.28.7040

S. M. Kogan, On the theory of hot electrons in semiconductors, Sov. Phys. Solid State, vol.4, p.18131819, 1963.

P. G. Klemens, Anharmonic Decay of Optical Phonons, Physical Review, vol.148, issue.2, p.845848, 1966.
DOI : 10.1103/PhysRev.148.845

D. Von-der-linde, J. Kuhl, and H. Klingenberg, Raman Scattering from Nonequilibrium LO Phonons with Picosecond Resolution, Physical Review Letters, vol.44, issue.23, p.4415051508, 1980.
DOI : 10.1103/PhysRevLett.44.1505

A. Othonos, Probing ultrafast carrier and phonon dynamics in semiconductors, Journal of Applied Physics, vol.83, issue.4, p.1789, 1998.
DOI : 10.1063/1.367411

C. L. Collins and Y. Yu, Generation of nonequilibrium optical phonons in GaAs and their application in studying intervalley electron-phonon scattering, Physical Review B, vol.30, issue.8, p.4501, 1984.
DOI : 10.1103/PhysRevB.30.4501

J. Shah, R. C. Leite, and J. Scott, Photoexcited hot LO phonons in GaAs, Solid State Communications, vol.8, issue.14, p.10891093, 1970.
DOI : 10.1016/0038-1098(70)90002-5

J. C. Mattos and R. C. Leite, Non equilibrium phonon distribution and electron-phonon coupling in semiconductors, Solid State Communications, vol.12, issue.6, p.465468, 1973.
DOI : 10.1016/0038-1098(73)90635-2

W. Cai, M. Marchetti, and M. Lax, Nonequilibrium phonon effect on time-dependent relaxation of hot electrons in semiconductor heterojunctions, Physical Review B, vol.35, issue.3, p.1369, 1987.
DOI : 10.1103/PhysRevB.35.1369

P. Lugli and S. M. Goodnick, Nonequilibrium longitudinal-optical phonon effects in GaAs-AlGaAs quantum wells, Physical Review Letters, vol.59, issue.6, p.716, 1987.
DOI : 10.1103/PhysRevLett.59.716

G. Conibeer, D. König, M. A. Green, and J. F. Guillemoles, Slowing of carrier cooling in hot carrier solar cells, Thin Solid Films, vol.516, issue.20, p.6948, 2008.
DOI : 10.1016/j.tsf.2007.12.102

B. K. Ridley, Electron scattering by conned lo polar phonons in a quantum well, Phys. Rev. B, vol.39, issue.8, p.52825286, 1989.

U. Bockelmann and G. Bastard, Phonon scattering and energy relaxation in two-, one-, and zero-dimensional electron gases, Physical Review B, vol.42, issue.14, p.8947, 1990.
DOI : 10.1103/PhysRevB.42.8947

X. Q. Li, H. Nakayama, and Y. Arakawa, Phonon bottleneck in quantum dots:???Role of lifetime of the confined optical phonons, Physical Review B, vol.59, issue.7, p.5069, 1999.
DOI : 10.1103/PhysRevB.59.5069

J. Urayama, T. B. Norris, J. Singh, and P. Bhattacharya, Observation of Phonon Bottleneck in Quantum Dot Electronic Relaxation, Physical Review Letters, vol.86, issue.21, p.4930, 2001.
DOI : 10.1103/PhysRevLett.86.4930

R. Heitz, H. Born, F. Guarth, O. Stier, A. Schliwa et al., Existence of a phonon bottleneck for excitons in quantum dots, Physical Review B, vol.64, issue.24, p.241305, 2001.
DOI : 10.1103/PhysRevB.64.241305

U. Hohenester, P. Supancic, P. Kocevar, W. Zhou, and H. Kurz, -type GaAs and InP, Physical Review B, vol.47, issue.20, p.4713233, 1993.
DOI : 10.1103/PhysRevB.47.13233
URL : https://hal.archives-ouvertes.fr/hal-01102724

]. Y. Takeda, T. Ito, R. Suzuki, T. Motohiro, S. Shrestha et al., Impact ionization and Auger recombination at high carrier temperature, 17 th International Photovoltaic Science and Engineering Conference, 2007.
DOI : 10.1016/j.solmat.2008.09.053

Y. Takeda, T. Ito, T. Motohiro, T. Nagashima, D. König et al., Solar energy conversion using temperature-controlled carriers

P. Aliberti, Y. Feng, Y. Takeda, . Shrestha, G. Ma-green et al., Investigation of theoretical efficiency limit of hot carriers solar cells with a bulk indium nitride absorber, Journal of Applied Physics, vol.108, issue.9, p.94507, 2010.
DOI : 10.1063/1.3494047

S. A. Lyon, Spectroscopy of hot carriers in semiconductors, Journal of Luminescence, vol.35, issue.3, p.121, 1986.
DOI : 10.1016/0022-2313(86)90066-9

M. A. Green, K. Emery, Y. Hishikawa, and W. Warta, Solar cell efficiency tables (version 37), Progress in Photovoltaics: Research and Applications, vol.73, issue.6, pp.84-92, 2011.
DOI : 10.1002/pip.1088
URL : http://citeseerx.ist.psu.edu/viewdoc/summary?doi=10.1.1.529.4214

C. Weisbuch and B. Vinter, Quantum semiconductor structures, fundamentals and applications, 1991.

M. Born and E. Wolf, Principles of Optics: Electromagnetic Theory of Propagation , Interference and Diraction of Light, 1959.
DOI : 10.1017/CBO9781139644181

A. , L. Bris, and J. Guillemoles, Hot-carrier solar cells, SPIE Newsroom, vol.97, pp.113506-113508, 2010.
DOI : 10.1117/2.1201104.003579
URL : https://hal.archives-ouvertes.fr/hal-00821561

A. L. Bris, L. Lombez, S. Laribi, G. Boissier, P. Christol et al., Thermalization rate study of GaSb-based heterostructures by continuous wave photoluminescence ad their potential as hot carrier solar cell absorbers, Physical Review B

A. L. Bris, C. Colin, S. Collin, J. Pelouard, R. Esteban et al., Hot carrier solar cells: Controlling thermalization in ultra thin devices, 2011 37th IEEE Photovoltaic Specialists Conference
DOI : 10.1109/PVSC.2011.6186325

J. Guillemoles, S. Laribi, A. Le-bris, L. Huang, and P. Olsson, Phononic Engineering within the Hot Carrier Solar Cells, chapter 12 of the book: Advanced solar cell materials, technology, modelling and simulation, press Oral presentations

A. , L. Bris, and J. Guillemoles, Hot carrier solar cell eciency simulation with realistic electronic contacts

A. , L. Bris, and J. Guillemoles, Hot carrier solar cell eciency simulation with carrier extraction through non ideal selective contacts, 35 th IEEE PV Specialists Conference, 2010.

A. L. Bris, L. Lombez, S. Laribi, G. Boissier, P. Christol et al., A path to realization of hot carreir solar cells, MRS 2011 Spring Meeting

A. L. Bris, J. Guillemoles, G. Boissier, P. Christol, S. Ivanova et al., Hot carrier solar cell eciency simulations with partial thermalization, pp.24-2009

A. L. Bris, L. Lombez, J. Guillemoles, R. Esteban, M. Laroche et al., Hot carrier solar cells: in the making, pp.25-2010
URL : https://hal.archives-ouvertes.fr/hal-00544780

A. L. Bris, J. Guillemoles, G. Boissier, P. Christol, S. Ivanova et al., Hot carrier solar cell eciency simulations with partial thermalization, Proceedings, 2009.

A. , L. Bris, and J. Guillemoles, Hot carrier solar cell eciency simulation with carrier extraction through non ideal selective contacts, IEEE PV Specialists Conference Proceedings, 2010.

A. L. Bris, L. Lombez, J. Guillemoles, R. Esteban, M. Laroche et al., Hot carrier solar cells: in the making, 2010.
URL : https://hal.archives-ouvertes.fr/hal-00544780

M. A. Green, G. J. Conibeer, D. König, S. Shrestha, S. Huang et al., Hot carrier solar cells: Challenges and recent progress, 2010 35th IEEE Photovoltaic Specialists Conference, 2010.
DOI : 10.1109/PVSC.2010.5614200