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Analyse des propriétés structurales et électroniques des boîtes quantiques InAs(P)/InP(001): vers la réalisation d'une source de photons uniques efficace aux longueurs d'onde des télécommunications

Abstract : We have studied the growth and the properties of InAsP/InP(001) quantum dots made by metal-organic vapor phase epitaxy for the realization of 1.55 µm single photon sources. Two complementary approaches, by scanning tunneling microscopy and transmission electron microscopy, have been investigated. On one hand, the study of cleaved quantum dots by scanning tunneling microscopy and spectroscopy, under ultra-high vacuum and at 4K, shows that these nanostructures exhibit up to 12 discretes localized states. Due to the tall height of the cleaved quantum dot, some excited states present a node in the growth direction. Simulation based on finite element method demonstrate that a parabolic potential is relevant to describe the lateral confinement of quantum dots. Tip-induced band bending effects are also studied in cleaved quantum dots, evidencing the contribution of hole states to the tunneling current. On the other hand, the structural properties of self-assembled quantum dots, studied by transmission electron microscopy, are correlated to the growth parameters. The influence of V-elements precursors on the quantum dot density, as well as the exchanges between the quantum dots and the wetting layer, are analyzed. The selective area growth of site-controlled quantum dots in nano-openings whose diameter is smaller than 100 nm is also investigated, in order to obtain a good and reproducible spatial coupling between a quantum dot and an optical microcavity. We show that the quantum dot formation does not rely on the Stranski-Krastanov growth mode, which may allow to control independently the height, the lateral size and the composition of the quantum dots.
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Contributor : Bruno Fain <>
Submitted on : Wednesday, January 16, 2013 - 12:21:10 PM
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Bruno Fain. Analyse des propriétés structurales et électroniques des boîtes quantiques InAs(P)/InP(001): vers la réalisation d'une source de photons uniques efficace aux longueurs d'onde des télécommunications. Science des matériaux [cond-mat.mtrl-sci]. Ecole Polytechnique X, 2012. Français. ⟨pastel-00776836⟩

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