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Étude du chauffage d'un substrat de silicium dans un système thermique rapide (RTP : Rapid Thermal Process)

Abstract : Rapid Thermal Process (RTP) is very used in the manufacturing of microelectronic components. It is a key stage like annealing, silicidation, oxidation, nitruration and chemical vapour deposition (CVD). Its principle is to heat a small number of silicon wafers by infrared lamps for very short durations. Its main challenge is to obtain a uniform temperature for the wafer surface.The aim of this study is to get a better understanding of the relations between the infrared lamp heating and the silicon wafer temperature profile in a rapid thermal system, the AS-One 150 system, in order to improve the silicon wafer temperature uniformity. The system is modelled in two and three dimensions. The modelling of an infrared lamp is also realized to have a better knowledge of the parameters to enter in the two and three dimensional models. The models are realized by using the CFD'ACE software. The heat and mass conservation equations are taken into consideration and the radiative heat transfer equation is solved by using a Monte-Carlo scheme. The models are validated by comparing the wafer temperature profiles and the filament temperatures in the calculations to the experimental ones. Two dimensional simulations are thereby carried out to put into light the influence of the quartz window on the wafer temperature profile and vice-versa. Different parameters are modified in the models like the radiative properties of the wafer or the window thermal diffusivity. This correlation is then explained by the emission, absorption, reflection and transmission properties of the silicon wafer and the quartz window and by the influence of the reactor cooled wall at 300 K. The different phenomena which explain the shape of the wafer temperature profile are displayed in a four phase diagram. A discussion of the diagram leads to two ideas to improve the wafer temperature uniformity. They consist in changing the radiative properties for the lower face of the quartz window to let the radiative heat of the lamp pass and to prevent the absorption of the radiations emitted by the silicon wafer by two configurations. These two ideas are verified by numerical simulations in two dimensions. A future experimental test is finally suggested.
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Submitted on : Wednesday, March 6, 2013 - 8:45:21 PM
Last modification on : Friday, August 5, 2022 - 2:54:00 PM


  • HAL Id : pastel-00797638, version 1


Pierre-Olivier Logerais. Étude du chauffage d'un substrat de silicium dans un système thermique rapide (RTP : Rapid Thermal Process). Thermique [physics.class-ph]. Arts et Métiers ParisTech, 2007. Français. ⟨NNT : 2007ENAM0024⟩. ⟨pastel-00797638⟩



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