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Modélisation physique et compacte de transistors en couches minces à base de silicium amorphe ou microcristallin

Abstract : In order to develop a compact model for amorphous or microcrystalline silicon thin-film transistors (TFT), we present in this thesis studies on compact models, parameter extraction methods and, mainly, several phenomena occurring in TFTs. We have proposed a new parameter extraction method. This method does not neglect the access resistance, which is different from conventional methods, and this reduces the subjectivity of the extraction process. The access resistance in two different structures has been analyzed. For the top-page coplanar structure, we have focused on geometrical reasons to show the dependence of the access resistance on the gate voltage. For the bottom-gate staggered structure, we have introduced the drift-diffusion approach into the current crowding model, proving the dependence of the access resistance on the gate voltage and on the current because of the electron diffusion. The dynamic behavior has been studied by using measurements and simulations, associating the intrinsic capacitances of TFTs with the turn-on delay time. We have observed the channel evolution process and we have proposed a model which describes the channel propagation in a TFT. We have studied also the aging phenomenon of TFTs and we have demonstrated the localization of the degradation and of the relaxation in a TFT under an electrical stress with non-zero drain bias.
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https://pastel.archives-ouvertes.fr/pastel-00807865
Contributor : Jong Woo Jin <>
Submitted on : Thursday, April 4, 2013 - 4:56:47 PM
Last modification on : Wednesday, March 27, 2019 - 4:20:03 PM
Long-term archiving on: : Friday, July 5, 2013 - 4:18:13 AM

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  • HAL Id : pastel-00807865, version 1

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Jong Woo Jin. Modélisation physique et compacte de transistors en couches minces à base de silicium amorphe ou microcristallin. Micro et nanotechnologies/Microélectronique. Ecole Polytechnique X, 2013. Français. ⟨pastel-00807865⟩

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