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Organized growth of semiconducting one-dimensional nanostructures in vertical porous templates for the fabrication of field effect transistors

Abstract : The work of this thesis has to be incorporated within the framework of the reduction of the building blocks used for the fabrication of the components in integrated circuits, and more specifically within the framework of the bottom-up approach. The main idea of this work is to use one-dimensional (1D) nanostructures as building blocks to fabricate field effect transistors. An original approach has been developed to collectively grow, handle and organize these nanostructures: the confined growth in the vertical and parallel pores provided by the self-arranged porous alumina structure. Porous anodic alumina (PAA) has been successfully synthesized on silicon substrates, and a novel porous stack has been fabricated using successive reactive ion etchings through a PAA layer as a hard mask. This porous stack is supposed to receive, organize the nanostructures, but also to provide the surrounding electrical contacts around every single nanostructure. In parallel, the growth of the 1D nanostructures that are silicon nanowires (SiNWs) and carbon nanotubes (CNTs) in PAA has been studied and optimized, using hot wire-assisted chemical vapor deposition (HWCVD). First electrical measurements, performed on SiNWs grown inside such a structure, brought evidence that a conductive path has been created by SiNWs. By investigating the electrodeposition of metallic nanoparticles inside nano-porous materials, copper, nickel and gold nanoparticles have been deposited at the bottom of vertical alumina pores, as well as inside a porous multi-layer, so as to catalyze nanostructure growth. This allowed to successfully grow both SiNWs and CNTs inside a porous multi-layer. Finally, a study based on a lithographically patterned silica mask has been carried out in order to fabricate a localized porous stack, which is essential to protect some fragile surface areas from all the transistor fabrication steps.
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Contributor : Emmanuel Lefeuvre Connect in order to contact the contributor
Submitted on : Sunday, September 14, 2014 - 10:54:16 PM
Last modification on : Wednesday, March 27, 2019 - 4:20:04 PM
Long-term archiving on: : Monday, December 15, 2014 - 10:10:44 AM


  • HAL Id : pastel-01063869, version 1



Emmanuel Lefeuvre. Organized growth of semiconducting one-dimensional nanostructures in vertical porous templates for the fabrication of field effect transistors. Micro and nanotechnologies/Microelectronics. Ecole Polytechnique X, 2012. English. ⟨pastel-01063869⟩



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