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Dépôts de films minces SiNx assistés par plasma de haute densité. Etudes corrélées de la phase gazeuse, de l'interface SiNx/InP et de la passivation du transistor bipolaire à hétérojonction InP.

Franck Delmotte 1
1 Laboratoire Charles Fabry de l'Institut d'Optique / Scop
LCFIO - Laboratoire Charles Fabry de l'Institut d'Optique
Abstract : This work deals with high density plasma deposition of SiNx thin films at low temperature by DECR (Distributed Electron Cyclotron Resonance) process and its application to InP optoelectronic devices, like heterojonction bipolar transistor. First, the use of high density plasma sources in silicon nitride deposition is reviewed and InP/InGaAs desoxidation methods are presented. Concerning DECR plasma study, the main contribution of our work lies in the single and double electrostatic probes analysis. This method, that we bring into operation in deposition plasmas, allowed us to determine some crucial parameters, like substrate incomming ion energy or ion current density. Thus, we can correlate those parameters to deposited thin films properties (density, stress, ...). We have also studied silicon nitride conduction mecanisms as a function of film thickness. Tunneling through the dielectric (Fowler-Nordheim emission) becomes insignificant when thickness exceed 20 nm. In this case, conduction is due to field-enhanced thermal excitation of trapped electrons (Frenkel-Poole emission). Electrical study of Al/SiNx/InP devices showed us that DECR N2 and/or NH3 plasma treatment of InP surface do not lead to significant improvement of SiNx/InP interface. Nevertheless, we have demonstrated that the InP surface oxide can be reduced by using hidrogen rich deposition plasma. Using these results, we have defined an heterojonction bipolar transistor passivation process that has been successfully tested.
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https://pastel.archives-ouvertes.fr/tel-00430327
Contributor : Franck Delmotte <>
Submitted on : Friday, November 6, 2009 - 2:51:45 PM
Last modification on : Wednesday, October 14, 2020 - 3:56:56 AM
Long-term archiving on: : Thursday, June 17, 2010 - 6:07:50 PM

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  • HAL Id : tel-00430327, version 1

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Franck Delmotte. Dépôts de films minces SiNx assistés par plasma de haute densité. Etudes corrélées de la phase gazeuse, de l'interface SiNx/InP et de la passivation du transistor bipolaire à hétérojonction InP.. Matière Condensée [cond-mat]. Université Paris Sud - Paris XI, 1998. Français. ⟨tel-00430327⟩

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