]. Y. Suematsu, K. Iga, and J. J. , Semiconductor Lasers in Photonics, Journal of Lightwave Technology, vol.26, issue.9, pp.1132-1144, 2008.
DOI : 10.1109/JLT.2008.923615

H. Iga, F. Koyama, S. Kinoshita, M. G. Bernard, G. Duraffourg et al., Surface Emitting Semiconductor LasersLaser Conditions in SemiconductorsCoherent Light Emission From GaAs JunctionsGaInAsP/InP Surface Emitting Injection LasersVertical cavity surface emitting laser with AlGaAs/GaAs Bragg reflectorSurface emitting multiple quantum well GaAs/AlGaAs laser with wavelength resonant periodic gain mediumHigh powers and subpicosecond pulses from an external-cavity surface-emitting InGaAs/InP multiple quantum well laserHigh-Power (>0.5-W CW) Diode- Pumped Vertical-External-Cavity Surface-Emitting Semiconductor Lasers with Circular TEM BeamsVertical external cavity surface emitting semiconductor lasersMode-locked operation of a diode-pumped, external-cavity GaAs/AlGaAs surface emitting laserIntracavity frequency doubling of a diode-pumped external-cavity surface-emitting semiconductor laserActively stabilized single frequency vertical external cavity AlGaAs laserPassively mode-locked diode-pumped surface-emitting semiconductor laserOptically pumped semiconductor thin-disk laser with external cavity operating at 660 nm, Low threshold 1.3 µm strained-layer Al x Ga y In 1-x-y As quantum well laser presented at the Conf. Lasers and Electro-Optics, CLEO'99Microchip vertical external cavity surface-emitting lasers Lasers and Electro-Optics SocietyOptical in-well pumping of a vertical-external-cavity surface-emitting laser Photonics West: Solid State Lasers XIII, pp.2323-2325, 1961.

J. Garnache, M. E. Jacquet, M. D. Kurdi, I. Salik, S. Sagnes et al., Wavelength tunable InP-based EP-VECSEL operating at room temperature and in CW at 1.55 µm9.1-W High-Efficient Continuous-Wave End-Pumped Vertical-External-Cavity Surface-Emitting Semiconductor Laser, Electron. Lett. Electron. Lett. IEEE Photon. Technol. Lett. Appl. Phys. Lett, vol.4024, issue.89, pp.671-672, 2004.

L. Fan, M. Fallahi, J. Hader, A. R. Zakharian, J. V. Moloney et al., Multichip vertical-external-cavity surface-emitting lasers: a coherent power scaling scheme, Optics Letters, vol.31, issue.24, pp.3612-3614, 2006.
DOI : 10.1364/OL.31.003612

]. K. Keller26, G. A. Kao, R. D. Keck, P. C. Maurer, S. Schultz et al., On the ultimate lower limit of attenuation in glass optical waveguidesRoom Temperature CW Operation of GaInAsP/InP DH Laser Emitting at 1.51 µm [31] O. Svelto, Principles of Lasers, 4 ed [32] N. Hodgson and H. Weber, Laser Resonators and Beam Propagation Fundamentals, Advanced Concepts and ApplicationsRecent developments in compact ultrafast lasersPassively modelocked surface-emitting semiconductor lasersQ-switching stability limits of continuous-wave passive mode lockingOptical sampling techniques50-GHz passively mode-locked surface-emitting semiconductor laser with 100-mW average output powerSub- 500-fs soliton-like pulse in a passively mode-locked broadband surface-emitting laser with 100 mW average power, Dielectric-fibre surface waveguide for optical frequency29] J. Crisp, Introduction to fiber optics, 2 ed. Oxford: Newnes, 2001. [30] G. P. Agrawal, Nonlinear Fiber Optics40] C. Symond, "Laser à semiconducteurs en cavité verticale éttendue émettant à 1, pp.493-497, 1966.

M. Kuznetsov, F. Hakimi, R. Sprague, A. Mooradian, M. Kuznetsov et al., High-Power (>0.5-W CW) Diode- Pumped Vertical-External-Cavity Surface-Emitting Semiconductor Lasers with Circular TEM BeamsDesign and characteristics of highpower (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM 00 beams, IEEE Photon. Technol. Lett. IEEE J. Sel. Top. Quant. Electr, vol.93, issue.5, pp.1063-1065, 1997.

C. Ye, Tunable external cavity diode lasers, 2004.

J. Piprek, S. W. Koch-]-d, J. W. Klaassen, H. C. Slotboom, V. Graaff et al., Semiconductor-Laser Fundamentals Physics of the Gain Materials Berlin Springer-VerlagUnified apparent bandgap narrowing in n-and p-type siliconStudy of dopantdependent band gap narrowing in compound semiconductor devicesTemperature dependence of the energy gap in semiconductorsParameter sets due to fittings of the temperature dependencies of fundamental bandgaps in semiconductorsBand parameters for III-V compound semiconductors and their alloys, Semiconductor Optoelectronic Devices: Introduction to Physics and Simulation. California Physics of Semiconductor DevicesMaterial parameters of quaternary III?V semiconductors for multilayer mirrors at 1.55 µm wavelength Modelling Simul. Mater. Sci. Eng, pp.125-129, 1951.

C. Lamberti, Characterization of Semiconductor Heterostructures and Nanostructures, B. R. Nag, Physics of Quantum Well Devices, vol.1617, issue.7, 2000.

J. E. Singh18-]-j, H. Ayers, . Of-semiconductors, H. Boca-raton, R. Okamoto et al., Optical Absorption of Gallium Arsenide between 0.6 and 2.75 eV Quantum well lasers [21] O. Manasreh, Semiconductor Heterojunctions and NanostructuresSemiconductor Quantum-Well Structures for Optoelectronics -Recent Advances and Future Prospects -Quantum States of Confined Carriers in Very Thin Al x Ga 1-x As-GaAs-Al x Ga 1-x As HeterostructuresRoom-temperature continuous operation of photopumped MO-CVD Al x Ga 1-x As-GaAs-Al x Ga 1-x As quantum-well lasersRoom-temperature laser operation of quantum-well Ga 1 -x Al x As-GaAs laser diodes grown by metalorganic chemical vapor deposition, Electronic and Optoelectronic Properties of Semiconductor Structures Diode lasers and photonic integrated circuits Semiconductor laser fundamentals Marcel Dekker, pp.768-315, 1962.

M. G. Bernard, G. Duraffourg, M. Yamada, H. Ishiguro, H. Nagato et al., Laser Conditions in SemiconductorsSemiconductor LasersEstimation of the Intra-Band Relaxation Time in Undoped AlGaAs Injection LaserOptical Absorption Characteristics of GaAs- AlGaAs Multi-Quantum-Well Heterostructure WaveguidesReduction of Lasing Threshold Current Density by the Lowering of Valence Band Effective MassBand structure engineering for low threshold high efficiency semiconductor lasers, physica status solidiOptical Gain in a Strained-Layer Quantum-Well Laser, pp.699-703, 1961.

M. W. Jain, R. V. Overstraeten, B. Deveaud, J. Shah, T. C. Damen et al., Compound Semiconductors, Strained Layers, and DevicesCapture of electrons and holes in quantum wellsQuantum design of semiconductor active materials: laser and amplifier applications, Design of the active structure of high-performance 1.55-µm In 1-x-y Ga y Al x As strained MQW lasers, pp.1886-1888, 1988.

J. Minch, S. H. Park, T. Keating, S. L. Chuang, H. Soda et al., As y P 1-y and In 1-x-y Ga x Al y As long-wavelength strained quantum-well lasersGaInAsP/InP Surface Emitting Injection LasersInterest in AlGaInAs on InP for optoelectronic applications Optoelectronics [see also IEE Proceedings-Optoelectronics]Compositional dependence of band-gap energy and conduction-band effective mass of In 1 -x -y Ga x Al y As lattice matched to InP, Electronic states and band alignment in GaInNAs/GaAs quantum-well structures with low nitrogen contentAlGaInAs/InP ridge-guide lasers operating at 1.55 µm SPIE In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II, pp.771-782, 1979.

J. J. Coleman, J. P. Zory, E. Ed-san-diego46, ]. T. Ishikawa, and J. E. Bowers, Strained layer quantum well heterostructure lasersBand lineup and in-plane effective mass of InGaAsP or InGaAlAs on InP strained-layer quantum well, Quantum well lasers, pp.562-570, 1993.

S. F. Yu, M. Kuznetsov, F. Hakimi, R. Sprague, A. Mooradian et al., Design and characteristics of highpower (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM 00 beamsExtended cavity surface-emitting semiconductor lasersIMD -Software for modeling the optical properties of multilayer filmsHigh performance 1.55 ?m vertical external cavity surface emitting laser with broadband integrated dielectric-metal mirror, 11 Références [1] D. Sands, Diode Lasers Thin-Film Optical FiltersOptical properties of the metals Al, and W in the infrared and far infrared, pp.561-573, 1983.

M. A. Ordal, R. J. Bell, J. R. Alexander, L. L. Long, M. R. Al et al., Refractive Index of GaAsRefractive Index of AlAsOptical properties of metallic films for vertical-cavity optoelectronic devicesOptical Constants of Silver, Gold, Copper, and Aluminum. II. The Index of Refraction nThe Optical Constants of Silver, Gold, Copper, and Aluminum. I. The Absorption Coefficient kTheorie der anomal licht-dispersionTemperature-dependent Sellmeier equation for the refractive index of Al x Ga 1?x AsDesign of Fabry-Perot Suface-Emitting Lasers with a Periodic Gain StructureAnalysis of the optical confinement factor in semiconductor lasersAnalytical Approximation of the Radiation Confinement Factor for the TE 0 Mode of a Double Heterojunction LaserResonant optical pumping of vertical-cavity surface emitting lasersDesign and operation of antiresonant Fabry-Perot saturable semiconductor absorbers for mode-locked solid-state lasersDiode-pumped broadband vertical-external-cavity surface-emitting semiconductor laser applied to high-sensitivity intracavity absorption spectroscopyCarrier-induced refractive-index-change in quantum-well lasersModeling of Nonlinear Absorption and Refraction in Quantum-Well Structures for All-Optical SwitchingGain, Refractive Index, Linewidth Enhancement Factor from Spontaneous Emission of Strained GaInP Quantum Well LasersRefractive index and loss changes produced by current injection in InGaAs(P)-InGaAsP multiple-quantum-well (MQW) wave-guidesSimple analytical approximations for the gain and refractive index spectra in quantumwell lasersBand-edge absorption coefficients from photoluminescence in semiconductor multiple quantum wells Diode lasers and photonic integrated circuitsBand-gap renormalization in semiconductor quantum wells containing carriersOptical in-well pumping of a vertical-external-cavity surface-emitting laserOptical in-well pumping of a semiconductor disk laser with high optical efficiencyOperation of an optical in-well-pumped vertical-external-cavity surface-emitting laserOn the thermal resistance of vertical-cavity surface-emitting lasersThermal impedance measurement of semiconductor lasersTemperature-dependent refractive index of semiconductorsThe Thermal Conductivity of Fluid Air, 1144-I I57Temperature dependence of the reflectivity in absorbing Bragg reflectorsThermal Management Strategies for High Power Semiconductor Pump Lasers IEEE Transactions on Components and Packaging TechnologiesHigh power and good beam quality at 980 nm from a vertical external-cavity surface-emitting laser44] H. Lindberg, M. Strassner, E. Gerster, and A. Larsson, "0.8 W optically pumped vertical external cavity surface emitting laser operating CW at 1550 nm, pp.4493-4499, 1871.

F. Van-loon, A. J. Kemp, A. J. Maclean, S. Calvez, J. Hopkins et al., Intracavity diamond heatspreaders in lasers: the effects of birefringence8-W high-efficiency continuous-wave semiconductor disk laser at 1000 nmHigh-Power (>0.5-W CW) Diode- Pumped Vertical-External-Cavity Surface-Emitting Semiconductor Lasers with Circular TEM BeamsEffective thermal conductivity analysis of 1.55 ?m InGaAsP/InP vertical-cavity top-surface-emitting microlasersThermal Management of Optically Pumped Long-Wavelength InP-Based Semiconductor Disk Lasers, Thermal conductivity reduction in GaAs-AlAs distributed Bragg reflectors, pp.9250-9260, 1993.

D. A. Wagner and . Burns, Thermal Management in 2.3-µm Semiconductor Disk Lasers: A Finite Element Analysis, IEEE J. Quant. Electr, vol.44, pp.125-135, 2008.

/. Websiteioffe, N. S. Sva-/, J. Adachi, ]. D. Piprek56, D. J. Lorenser et al., Available URLMaterial parameters of quaternary III?V semiconductors for multilayer mirrors at 1.55 µm wavelengthPassively modelocked surface-emitting semiconductor lasers50-GHz passively mode-locked surface-emitting semiconductor laser with 100-mW average output powerHighpower passively mode-locked semiconductor lasersThermal Management in Vertical-External-Cavity Surface-Emitting Lasers: Finite-Element Analysis of a Heatspreader ApproachRate-equation-based VCSEL thermal model and simulationSelf-consistent approach to thermal effects in vertical-cavity surface-emitting lasersMathematical modelling of thermal effects in semiconductor laser operationThe temperature distribution in a semi-infinite body due to surface absorption of laser radiation, Lattice thermal resistivity of III-V compound alloys63] O. Madelung, Semiconductors: Data Handbook, pp.1844-1848, 1983.

I. Lafosse, L. Sagnes, J. Leroy, and . Oudar, Thermal optimization of 1.55 ?m OP-VECSEL with hybrid metal?metamorphic mirror for single-mode high power operation, Optical and Quantum Electronics, 2008.

D. M. Saw, W. J. Siekhaus, M. H. Macdougal, J. Geske, C. Lin et al., Thermal expansion of AuIn 2Guide to references on III-V semiconductor chemical etchingThermal Impedance of VCSEL's with AlO x ?GaAs DBR'sDispositifs semiconducteurs en pompage électrique pour laser en cavité verticale externe émettant à 1,55 ?mDetermination of carrier-induced optical index and loss variations in GaInAsP/InP heterostructures from static and dynamic Mach-Zehnder interferometer measurementsOptical generation of stable MMwave radiation using diode pumped Nd:YAG lasersSpectroscopy in a new lightSingle frequency tunable Sbbased VCSELs emitting at 2.3µmNarrow linewidth operation of a tunable optically pumped semiconductor laser, Composant passif à absorbants saturables sur InP pour la régénération toutoptique à très hauts-débits71] W. Koechner, Solid-State Laser Engineering Proceedings of the SPIE-International Society for Optical EngineeringActively stabilized single frequency vertical external cavity AlGaAs laser, pp.1153-1157, 1981.

W. R. Leeb, S. Horst, S. Chatterjee, W. Rühle, P. Brick et al., Performance changes of a vertical-external-cavity surface emitting laser by an intracavity anti-reflex-coating The Physics of Thin Film Optical Spectra: An IntroductionSpontaneous and Stimulated Recombination Radiation in SemiconductorsSpectrum studies on a GaAs-AlGaAs multi-quantum-well laser diode grown by molecular beam epitaxy, Appl. Phys. A: Materials Science & Processing, pp.267-272, 1964.

]. E. Garmire, A. Y. Keller, A. C. Tropper, E. Göbel, J. L. Oudar et al., An Analysis of Saturable AbsorbersLaser Mode-Locking with Saturable AbsorbersPassively modelocked surface-emitting semiconductor lasersUltrafast spectroscopy of semiconductorsSubpicosecond Spectral Hole Burning Due to Nonthermalized Photoexcited Carriers in GaAsFemtosecond Excitation of Nonthermal Carrier Populations in GaAs Quantum Wells Ultrafast spectroscopy of semiconductors and semiconductor nanostructuresExciton thermalization in quantum-well structures, 9 Références [1] M. HercherDirect observation of free-exciton thermalization in quantum-well structures, pp.947-953, 1967.

U. Keller and G. Herziger, Nonlinear optical absorption and dynamics in quantum wellsLarge room-temperature optical nonlinearity in GaAs/Ga 1 -x Al x As multiple quantum well structuresNonlinear excitonic optical absorption in GaInAs/InP quantum wellsSaturated Optical Absorption Through Band Filling in SemiconductorsRoom-temperature excitonic nonlinear-optical effects in semiconductor quantum-well structuresRoom temperature excitonic nonlinear aborption and refraction in GaAs/AlGaAs multiple quantum well structuresFemtosecond Dynamics of Resonantly Excited Excitons in Room-Temperature GaAs Quantum WellsMode locking of semiconductor diode lasers using saturable excitonic nonlinearitiesMultiple quantum well passive mode locking of a NaCl color center laserSolid-state low-loss intracavity saturable absorber for Nd:YLF lasers: an antiresonant semiconductor Fabry -Perot saturable absorberBroadband fast semiconductor saturable absorberMode suppression and single frequency operation in gaseous optical masersCoupled-cavity resonant passive mode-locked Ti:sapphire laserUltrafast All-Solide State Laser TechnologySelfstarting soliton modelocked Ti-sapphire laser using a thin semiconductor saturable absorberScaling of the antiresonant Fabry-Perot saturable absorber design toward a thin saturable absorberFemtosecond Yb:YAG laser using semiconductor saturable absorbersLow-loss intracavity AlAs/AlGaAs saturable Bragg reflector for femtosecond mode locking in solid-state lasersAll-in-one dispersion-compensating saturable absorber mirror for compact femtosecond laser sourcesTheory of coupled-cavity mode locking with a resonant nonlinearityThe soliton laserImproved mode locking of an F-center laser with a nonlinear nonsoliton external cavityEnhanced mode locking of color-center lasersAdditive pulse mode lockingParameter Ranges for CW Passive Mode Locking56-ps passively Q-switched diode-pumped microchip laserBroadband saturable absorber for 10 fs pulse generationRecombination at semiconductor surfaces and interfacesSurface recombination velocity and lifetime in InPA new kind of fast quantum-well semiconductor saturable-absorber mirror with low losses for ps pulse generation, Ultrafast solid-state lasers Laser Physics and Applications Subvolume B: Laser SystemsSemiconductor saturable absorber mirrors (SESAM's) for femtosecond to nanosecond pulse generation in solid-state lasers IRE, ProceedingsSemiconductor Nonlinearities for Solid-state Laser Modelocking and Q-Switching Nonlinear Optics in Semiconductors II43] A. Garnache, B. Sermage, R. Teissier, G. Saint-Giro, and I. Sagnes Indium Phosphide and Related Materials, 2003. International Conference on, pp.33-167, 1962.

]. A. Garnache, S. Hoogland, A. C. Tropper, I. Sagnes, G. Saint-girons et al., Ultrafast optical Stark mode-locked semiconductor laserUltrashort carrier lifetimes in H + bombarded InPComparison of light-and heavy-ion-irradiated quantum-wells for use as ultrafast saturable absorbersUltrafast excitonic saturable absorption in ion-implanted InGaAs/InAlAs multiple quantum wellsThermal stability of ionirradiated InGaAs with (sub-) picosecond carrier lifetimeLaser à semiconducteurs en cavité verticale éttendue émettant à 1,55?m et perspective pour la génération d'impulsions brèvesUltrafast Carrier Dynamics in III-V Semiconductors Grown by Molecular-Beam Epitaxy at Very Low Substrate TemperaturesMicrostructure and subpicosecond photoresponse in GaAs grown by molecular beam epitaxy at very low temperaturesLarge optical nonlinearity and fast response time in low-temperature grown GaAs/AlAs multiple quantum wellsSubpicosecond carrier lifetime in GaAs grown by molecular beam epitaxy at low temperaturesCarrier lifetime versus anneal in low temperature growth GaAsUltrafast 1.55-µm photoresponses in low-temperature-grown InGaAs/InAlAs quantum wellsFemtosecond response time in beryllium-doped low-temperature-grown GaAs/AlAs multiple quantum wellsLong-wavelength fast semiconductor saturable absorber mirrors using metamorphic growth on GaAs substrates, Carrier trapping due to Fe 3+ / Fe 2+ in epitaxial InP290 fs switching time of Fe-doped quantum well saturable absorbers in a microcavity in 1.55 mu m range, pp.3892-3894, 1991.

M. L. Dû, J. C. Harmand, K. Meunier, G. Patriarche, J. L. Oudar et al., Quantum-well saturable absorber at 1.55 µm on GaAs substrate with a fast recombination rateHigh precision optical characterization of semiconductor saturable absorber mirrorsNew regime of inverse saturable absorption for self-stabilizing passively mode-locked lasersSuppression of Q-switched mode locking and break-up into multiple pulses by inverse saturable absorptionOptical characterization of semiconductor saturable absorbersRoom-Temperature Optical Nonlinearities in GaAs, Growth of GaN x As 1?x atomic monolayers and their insertion in the vicinity of GaInAs quantum wellsAbsorbant saturable sur GaAs pour fonctions optiques rapides à 1.55µm Handbook of Optical Constants of Solids, pp.254-255, 1985.

H. W. Mocker, R. J. Collins-]-a, D. A. Demaria, H. Stetser, H. Heynau et al., Self Mode-Locking of Lasers with Saturable AbsorbersSelf-Locking of Modes in LasersSelf-synchronisation of modes in a GaAs semiconductor injection laserMode-locking in a semiconductor laser with electronic excitation of an internal nonlinear active mediumModelocking of Semiconductor Laser DiodesTheory of mode locking with a slow saturable absorber, Haus, pp.270-273, 1965.

H. A. Haus, H. A. Keller, K. J. Weingarten, F. X. Kärtner, D. Kopf et al., Parameter Ranges for CW Passive Mode LockingSemiconductor saturable absorber mirrors (SESAM's) for femtosecond to nanosecond pulse generation in solid-state lasersQ-switching stability limits of continuous-wave passive mode lockingMode-Locking with Slow and Fast Saturable Absorbers?What's the Difference?Mode-locked operation of a diode-pumped, external-cavity GaAs/AlGaAs surface emitting laser," presented at the Conf. Lasers and Electro-Optics, CLEO'99Passively mode-locked diode-pumped surface-emitting semiconductor laser10-GHz train of sub- 500-fs optical soliton-like pulses from a surface-emitting semiconductor laserUltrafast optical Stark mode-locked semiconductor laser, J. Appl. Phys. IEEE J. Quant. Electr. IEEE J. Sel. Top. Quant. Electr. J. Opt. Soc. Am. B IEEE J. Sel. Top. Quant. Electr. IEEE Photon. Technol. Lett. IEEE Photon. Technol. Lett. Opt. Lett, vol.4617, issue.33, pp.3049-3058, 1975.

C. Hirlimann18, ]. Silvestri, P. Laporta, O. Svelto-tsuchiya, T. Kamiya et al., Pulsed OpticsResonant Saturable Absorber Mirrors for Dispersion Control in Ultrafast LasersThird-order dispersion in a passively mode-locked continuouswave dye laserMeasurement of picoseconds laser pulse widthMeasurement of picosecond pulse shape and background levelCW Autocorrelation Measurements of picosecond Laser PulsesA rapid-scanning autocorrelation scheme for continous monitoring of picosecond laser pulsesHow to Measure the Characteristics of Laser PulsesAmbiguity of Ultrashort Pulse Shapes Retrieved From the Intensity Autocorrelation and the Power SpectrumBasis for Picosecond Structure in Mode-Locked Laser PulsesControl and measurement of ultrashort pulse shapes (in amplitude and phase) with femtosecond accuracy Ultrashort Laser Pulse Phenomenon: Fundamentals, Techniques and Applications on a Femtosecond Time ScalePhase Correlation Between Longitudinal Modes in Semiconductor Self-Pulsating DBR LasersFM and AM mode locking of the homogeneous laser-Part I: TheoryLaser Mode-Locking with Saturable AbsorbersMode locking of semiconductor diode lasers using saturable excitonic nonlinearitiesThe soliton laserSolitary-pulse stabilization and shortening in actively mode-locked lasersPerturbation theory for solitons in optical fibersStabilization of solitonlike pulses with a slow saturable absorberSoliton-like pulse-shaping mechanism in passively mode-locked surface-emitting semiconductor lasersSoliton Dynamics in Mode-Locked LasersSub- 500-fs soliton-like pulse in a passively mode-locked broadband surface-emitting laser with 100 mW average powerDynamics of pulse formation in mode-locked semiconductor disk lasersMode-Locking of LasersUltrashort pulses from the soliton laserNoise characterization of femtosecond color-center lasersNoise of mode-locked lasers, Femtosecond Laser Pulses: Principles and Experiments CW mode-locked dye lasers QE-16 Femtosecond Laser Pulses: Principles and Experiments, C. Rullière, Ed., 2 ed New YorkNoise of mode-locked lasers (Part I): numerical model, pp.25-56, 1967.

R. Paschotta, Noise of mode-locked lasers (Part II): timing jitter and other fluctuations, Applied Physics B, vol.13, issue.2, pp.163-173, 2004.
DOI : 10.1007/s00340-004-1548-9

B. P. Drakhlis50-]-r, C. Scott, B. H. Langrock, . A. Kolner51-]-l, M. E. Jiang et al., High-dynamic-range laser amplitude and phase noise measurement techniquesMeasuring timing jitter with optical cross-correlationsMode-locked lasers and ultrashort light pulsesCharacterization of the noise in continuously operating mode-locked lasersStability and astigmatic compensation analysis of fiveand six-or seven-mirror cavities for mode-locked dye lasersStability and astigmatic compensation analysis of fivemirror cavity for mode-locked dye lasers, Sensitivity of a Three-Mirror Cavity to Thermal and Nonlinear Lensing: Gaussian-Beam Analysis, pp.641-655, 1973.

V. Magni, R. Häring, R. Paschotta, A. Aschwanden, E. Gini et al., Highpower passively mode-locked semiconductor lasersHigher order chirp compensation of femtosecond mode-locked semiconductor lasers using optical fibers with different groupvelocity dispersionsMode locking a 1550 nm semiconductor disk laser by using a GaInNAs saturable absorberTiming jitter of 897MHz optical pulse train from actively stabilised passively modelocked surface-emitting semiconductor laser, Multielement stable resonators containing a variable lens Agrawal, Nonlinear Fiber Optics, pp.1268-1275, 1962.

S. Kawanishi, T. Yamamoto, M. Nakazawa, M. M. Fejer, S. Nogiwa et al., Improvement of sensitivity in optical sampling system0.5-Tb/s eyediagram measurement by optical sampling using XPM-induced wavelength shifting in highly nonlinear fiber107-Gb/s Optical Signal Generation Using Electronic Time-Division MultiplexingHigh-sensitivity high-resolution sampling using linear optics and waveguide optical hybridRequirements for the sampling source in coherent linear samplingUltra sensitive optical sampling by coherent linear detectionMonitoring of Optical Signals From Constellation Diagrams Measured With Linear Optical SamplingDirect measurement of constellation diagrams of optical sources, High sensitivity waveform measurement with optical sampling using quasi-phasematched mixing in LiNbO 3 waveguide OFCPhase stabilization of ultrashort optical pulses, pp.842-844, 1999.