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Transistors à nanofils de silicium top-down. Application à la détection biologique.

Abstract : This work focuses on biological sensors based on an array of silicon nanowires operating as a field-effect transistor with a "biological gate". This new kind of biosensors is devoted to be integrated into ultrasensitive and compact detection systems for medical and security applications. We propose to fabricate silicon nanowire transistors in a "top-down" approach. This method, which consists in etching nanowires in a thin film, allows to precisely control nanowire position, contrary to the bottom-up approach, which uses CVD-grown nanowires. This enhances the reproducibility of the electrical characteristics of the transistors and eases their integration into a fluidic environment. The first part of our work focuses on the design and fabrication of top-down silicon nanowire transistors. These technological efforts lead us to characterize fabricated transistors in ambient air before integrating them into a liquid environment. The second part presents the results of real-time electrical measurements performed in solution. We demonstrate that our transistor can work as a sensor by monitoring pH variations. Then our study highlights the parameters affecting the sensor sensitivity (gate voltage value, ionic strength, microfluidics, ...), considering that the understanding of these factors is essential to perform reliable monitoring of biological interactions.
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Submitted on : Tuesday, June 1, 2010 - 5:14:14 PM
Last modification on : Monday, April 4, 2022 - 10:40:39 AM
Long-term archiving on: : Friday, September 17, 2010 - 11:44:27 AM


  • HAL Id : tel-00488323, version 1



Gaëlle Lehoucq. Transistors à nanofils de silicium top-down. Application à la détection biologique.. Physique [physics]. Ecole Polytechnique X, 2010. Français. ⟨tel-00488323⟩



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