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Optique Non-Linéaire dans les structures semi-conductrices à fort confinement du champ.

Alexandre Baron 1
1 Laboratoire Charles Fabry de l'Institut d'Optique / Manolia
LCFIO - Laboratoire Charles Fabry de l'Institut d'Optique
Abstract : Semiconductor photonic structures are very interesting for all-optical signal processing due to their strong non-linear properties. Structuring the medium on a small scale enables light localization and therefore enhancement of nonlinear phenomena. However, the extent of this enhancement depends on the order of the nonlinearity, thus introducing new interaction regimes, which are the subject of this manuscript. After describing the theoretical background presenting the enhancement of nonlinear processes through localization in semiconductors, we demonstrate experimentally and quantitatively, for the first time the influence of localization on the enhancement of nonlinearities such as the Kerr effect, two-photon absorption and free-carrier effects, by studying a GaAs photonic crystal. We solve the Raman amplification problem in silicon nanowaveguides, by developing an analytical model that shows the influence of nonlinear phase modulation effects on the decrease of the effective Raman gain in silicon. This model is validated by experimental data. Finally, we study the application of localization to all-optical nonlinear switching. We introduce the concept of nonlinear switching and absorption lengths, which enables us to analyze different materials. We show that pure Kerr switching is unattainable in Si and GaAs (contrary to AlGaAs and GaN), but that switching assisted by free-carrier effects is a possibility for certain microstructure geometries.
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  • HAL Id : tel-00573319, version 1

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Alexandre Baron. Optique Non-Linéaire dans les structures semi-conductrices à fort confinement du champ.. Physique Atomique [physics.atom-ph]. Université Paris Sud - Paris XI, 2010. Français. ⟨tel-00573319⟩

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