.. Plasma, 71 3.2.6 Pros and cons of dust and geometrical models, p.74

. Kapur, . Moslehi, . Deshpande, . Rana, . Kramer et al., A Manufacturable, Non-plated, Non-Ag Metallization based 20, 44% Efficient, 243 cm 2 Area, Back Contacted Solar Cell on 40 ?m Thick Mono-Crystalline Silicon 28th EUPVSEC Proceedings, 2013.

S. Vep?ek and V. Mare?ek, The preparation of thin layers of Ge and Si by chemical hydrogen plasma transport, Solid-State Electronics, vol.11, issue.7, pp.683-684, 1968.
DOI : 10.1016/0038-1101(68)90071-3

A. Matsuda, Growth mechanism of microcrystalline silicon obtained from reactive plasmas, Thin Solid Films, vol.337, issue.1-2, pp.1-6, 1999.
DOI : 10.1016/S0040-6090(98)01165-1

P. Roca and . Cabarrocas, Deposition Techniques and Processes Involved in the Growth of Amorphous and Microcrystalline Silicon Thin Films, " in Physics and Technology of Amorphous-Crystalline Heterostructure Silicon Solar Cells, pp.131-160, 2012.

O. Vetterl, F. Finger, R. Carius, P. Hapke, L. Houben et al., Intrinsic microcrystalline silicon: A new material for photovoltaics, Solar Energy Materials and Solar Cells, vol.62, issue.1-2, pp.97-108, 2000.
DOI : 10.1016/S0927-0248(99)00140-3

A. A. Howling, B. Strahm, and C. Hollenstein, Non-intrusive plasma diagnostics for the deposition of large area thin film silicon, Thin Solid Films, vol.517, issue.23, pp.6218-6224, 2009.
DOI : 10.1016/j.tsf.2009.02.053

M. Kondo, M. Fukawa, L. Guo, and A. Matsuda, High rate growth of microcrystalline silicon at low temperatures, Journal of Non-Crystalline Solids, vol.266, issue.269, pp.84-89, 2000.
DOI : 10.1016/S0022-3093(99)00744-9

S. Michard, M. Meier, B. Grootoonk, O. Astakhov, A. Gordijn et al., High deposition rate processes for the fabrication of microcrystalline silicon thin films, Materials Science and Engineering: B, vol.178, issue.9, pp.691-694, 2013.
DOI : 10.1016/j.mseb.2012.11.020

C. Droz, E. Vallat-sauvain, J. Bailat, L. Feitknecht, J. Meier et al., Relationship between Raman crystallinity and open-circuit voltage in microcrystalline silicon solar cells, Solar Energy Materials and Solar Cells, vol.81, issue.1, pp.61-71, 2004.
DOI : 10.1016/j.solmat.2003.07.004

W. Futako, K. Yoshino, C. M. Fortmann, and I. Shimizu, Wide band gap amorphous silicon thin films prepared by chemical annealing, Journal of Applied Physics, vol.85, issue.2, pp.812-818, 1999.
DOI : 10.1063/1.369165

J. Meier, S. Dubail, J. Cuperus, U. Kroll, R. Platz et al., Recent progress in micromorph solar cells, Journal of Non-Crystalline Solids, vol.227, issue.230, pp.227-230, 1998.
DOI : 10.1016/S0022-3093(98)00352-4

S. Veprek, F. Sarott, and Z. Iqbal, Effect of grain boundaries on the Raman spectra, optical absorption, and elastic light scattering in nanometer-sized crystalline silicon, Physical Review B, vol.36, issue.6, pp.3344-3350, 1987.
DOI : 10.1103/PhysRevB.36.3344

B. Rezek, J. Stuchlík, A. Fejfar, and J. Ko?ka, Local characterization of electronic transport in microcrystalline silicon thin films with submicron resolution, Applied Physics Letters, vol.74, issue.10, pp.1475-1477, 1999.
DOI : 10.1063/1.123585

N. Layadi, P. Roca-i-cabarrocas, B. Drévillon, and I. Solomon, Real-time spectroscopic ellipsometry study of the growth of amorphous and microcrystalline silicon thin films prepared by alternating silicon deposition and hydrogen plasma treatment, Physical Review B, vol.52, issue.7, p.5136, 1995.
DOI : 10.1103/PhysRevB.52.5136

S. Hamma, P. Roca, and . Cabarrocas, correlation between the optical and electrical properties of thin intrinsic and n-type microcrystalline silicon films, Journal of Applied Physics, vol.81, issue.11, pp.7282-7288, 1997.
DOI : 10.1063/1.365325

J. Y. Seto, The electrical properties of polycrystalline silicon films, Journal of Applied Physics, vol.46, issue.12, pp.5247-5254, 1975.
DOI : 10.1063/1.321593

C. Droz, M. Goerlitzer, N. Wyrsch, and A. Shah, Electronic transport in hydrogenated microcrystalline silicon: similarities with amorphous silicon, Journal of Non-Crystalline Solids, vol.266, issue.269, pp.319-324, 2000.
DOI : 10.1016/S0022-3093(99)00718-8

R. Brenot, R. Vanderhaghen, B. Drévillon, P. Roca-i-cabarrocas, R. Rogel et al., Transport mechanisms in hydrogenated microcrystalline silicon, Thin Solid Films, vol.383, issue.1-2, pp.53-56, 2001.
DOI : 10.1016/S0040-6090(00)01791-0

O. Astakhov, R. Carius, F. Finger, Y. Petrusenko, V. Borysenko et al., Relationship between defect density and charge carrier transport in amorphous and microcrystalline silicon, Physical Review B, vol.79, issue.10, p.104205, 2009.
DOI : 10.1103/PhysRevB.79.104205

S. Klein, F. Finger, R. Carius, and J. Lossen, Improved deposition rates for ??c-Si:H at low substrate temperature, Thin Solid Films, vol.501, issue.1-2, pp.43-46, 2006.
DOI : 10.1016/j.tsf.2005.07.105

S. Hänni, G. Bugnon, G. Parascandolo, M. Boccard, J. Escarré et al., High-efficiency microcrystalline silicon single-junction solar cells, Progress in Photovoltaics: Research and Applications, pp.821-826, 2013.

S. Ha?nni, D. T. Alexander, L. Ding, G. Bugnon, M. Boccard et al., On the Interplay Between Microstructure and Interfaces in High-Efficiency Microcrystalline Silicon Solar Cells, On the Interplay Between Microstructure and Interfaces in High-Efficiency Microcrystalline Silicon Solar Cells, pp.11-16, 2013.
DOI : 10.1109/JPHOTOV.2012.2214766

M. A. Green, K. Emery, Y. Hishikawa, W. Warta, and E. D. Dunlop, Solar cell efficiency tables (version 44), Progress in Photovoltaics: Research and Applications, vol.73, issue.6, pp.701-710, 2014.
DOI : 10.1002/pip.2525

H. Sai, T. Koida, T. Matsui, I. Yoshida, K. Saito et al., Microcrystalline Silicon Solar Cells with 10.5% Efficiency Realized by Improved Photon Absorption via Periodic Textures and Highly Transparent Conductive Oxide, Applied Physics Express, vol.6, issue.10, p.104101, 2013.
DOI : 10.7567/APEX.6.104101

B. Yan, G. Yue, L. Sivec, J. Yang, S. Guha et al., :H layer leading to a >16% efficient multi-junction thin-film silicon solar cell, Applied Physics Letters, vol.99, issue.11, p.113512, 2011.
DOI : 10.1063/1.3638068

S. Guha, J. Yang, and B. Yan, High efficiency multi-junction thin film silicon cells incorporating nanocrystalline silicon, Solar Energy Materials and Solar Cells, vol.119, pp.1-11, 2013.
DOI : 10.1016/j.solmat.2013.03.036

A. Madan and S. Ovshinsky, A new amorphous silicon-based alloy for electronic applications, Nature, vol.276, pp.482-484, 1978.

A. Madan and S. R. Ovshinsky, Properties of amorphous Si:F:H alloys, Journal of Non-Crystalline Solids, vol.3536, pp.171-181, 1980.

I. Shimizu, Reactions on substrate for preparation of silicon-networks from precursors, SiFnHm(n+m<3), Journal of Non-Crystalline Solids, vol.97, issue.98, pp.257-260, 1987.
DOI : 10.1016/0022-3093(87)90061-5

S. Oda, S. Ishihara, N. Shibata, H. Shirai, A. Miyauchi et al., The Role of Hydrogen Radicals in the Growth of a-Si and Related Alloys, Japanese Journal of Applied Physics, vol.25, issue.Part 2, No. 3, pp.188-190, 1986.
DOI : 10.1143/JJAP.25.L188

G. Bruno, P. Capezzuto, M. M. Giangregorio, G. V. Bianco, and M. Losurdo, From amorphous to microcrystalline silicon: Moving from one to the other by halogenated silicon plasma chemistry, Philosophical Magazine, vol.69, issue.28-30, pp.28-30, 2009.
DOI : 10.1063/1.2891087
URL : https://hal.archives-ouvertes.fr/hal-00519091

G. Bruno, P. Capezzuto, and G. Cicala, ???Si plasma deposition process, Journal of Applied Physics, vol.69, issue.10, pp.7256-7266, 1991.
DOI : 10.1063/1.347623

G. Cicala, P. Capezzuto, and G. Bruno, Microcrystalline silicon by plasma enhanced chemical vapor deposition from silicon tetrafluoride, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.19, issue.2, pp.515-523, 2001.
DOI : 10.1116/1.1351004

M. Lejeune, W. Beyer, R. Carius, J. Müller, and B. Rech, Silicontetrachloride based microcrystalline silicon for application in thin film silicon solar cells, Thin Solid Films, vol.451, issue.452, pp.451-452, 2004.
DOI : 10.1016/j.tsf.2003.11.025

W. Beyer, R. Carius, M. Lejeune, J. Müller, B. Rech et al., Deposition and properties of microcrystalline silicon from chlorosilane precursor gases, Journal of Non-Crystalline Solids, vol.338, issue.340, pp.338-340, 2004.
DOI : 10.1016/j.jnoncrysol.2004.02.041

S. Kasouit, S. Kumar, R. Vanderhaghen, P. Roca-i-cabarrocas, and I. French, Fluorine and hydrogen effects on the growth and transport properties of microcrystalline silicon from SiF4 precursor, Journal of Non-Crystalline Solids, vol.299, issue.302, pp.299-302, 2002.
DOI : 10.1016/S0022-3093(01)01187-5

P. R. Moreno and . Cabarrocas, Ultra-thin crystalline silicon films produced by plasma assisted epitaxial growth on silicon wafers and their transfer to foreign substrates, EPJ Photovoltaics, vol.1, p.6, 2010.
DOI : 10.1051/epjpv/2010001

T. Rios, . Djeridane, R. Reydet, and . Cabarrocas, Epitaxial Growth of Crystalline Silicon on N42 Alloys by PECVD at 175 °C for Low Cost and High Efficiency Solar Cells, 26th EUPVSEC Proceedings, 2011.

O. Vetterl, A. Lambertz, A. Dasgupta, F. Finger, B. Rech et al., Thickness dependence of microcrystalline silicon solar cell properties, Solar Energy Materials and Solar Cells, vol.66, issue.1-4, p.345, 2001.
DOI : 10.1016/S0927-0248(00)00193-8

P. Roca-i-cabarrocas, J. B. Chévrier, J. Huc, A. Lloret, J. Y. Parey et al., A fully automated hot???wall multiplasma???monochamber reactor for thin film deposition, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.9, issue.4, pp.2331-2341, 1991.
DOI : 10.1116/1.577318

L. Kroely, S. K. Ram, P. Bulkin, and P. R. Cabarrocas, Microcrystalline silicon films and solar cells deposited at high rate by Matrix Distributed Electron Cyclotron Resonance (MDECR) plasma, physica status solidi (c), vol.7, pp.3-4, 2010.
DOI : 10.1002/pssc.200982789
URL : https://hal.archives-ouvertes.fr/hal-00913541

C. W. Bauschlicher and P. R. Taylor, ???HF+H, The Journal of Chemical Physics, vol.86, issue.2, pp.858-861, 1987.
DOI : 10.1063/1.452286

A. A. Sansonnens, The role of metastable atoms in argon-diluted silane radiofrequency plasmas, Journal of Physics D: Applied Physics, vol.27, issue.7, 1994.
DOI : 10.1088/0022-3727/27/7/011

M. J. Kushner, A model for the discharge kinetics and plasma chemistry during plasma enhanced chemical vapor deposition of amorphous silicon, Journal of Applied Physics, vol.63, issue.8, pp.2532-2551, 1988.
DOI : 10.1063/1.340989

G. Cicala, M. Losurdo, P. Capezzuto, and G. Bruno, Time-resolved optical emission spectroscopy of modulated plasmas for amorphous silicon deposition, Plasma Sources Science and Technology, vol.1, issue.3, p.156, 1992.
DOI : 10.1088/0963-0252/1/3/003

S. Kasouit, J. Damon-lacoste, R. Vanderhaghen, P. Roca, and . Cabarrocas, Contribution of plasma generated nanocrystals to the growth of microcrystalline silicon thin films, Journal of Non-Crystalline Solids, vol.338, issue.340, pp.338-340, 2004.
DOI : 10.1016/j.jnoncrysol.2004.02.027

P. Roca-i-cabarrocas, N. Layadi, T. Heitz, B. Drévillon, and I. Solomon, Substrate selectivity in the formation of microcrystalline silicon: Mechanisms and technological consequences, Applied Physics Letters, vol.66, issue.26, pp.3609-3611, 1995.
DOI : 10.1063/1.113803

A. A. Fridman, L. Boufendi, T. Hbid, B. V. Potapkin, and A. Bouchoule, Dusty plasma formation: Physics and critical phenomena. Theoretical approach, Journal of Applied Physics, vol.79, issue.3, pp.1303-1314, 1996.
DOI : 10.1063/1.361026

E. V. Johnson, Y. Djeridane, A. Abramov, P. Roca, and . Cabarrocas, Experiment and modelling of very low frequency oscillations in RF-PECVD: a signature for nanocrystal dynamics, Plasma Sources Science and Technology, vol.17, issue.3, p.35029, 2008.
DOI : 10.1088/0963-0252/17/3/035029

L. Boufendi and A. Bouchoule, Particle nucleation and growth in a low-pressure argon-silane discharge, Plasma Sources Science and Technology, vol.3, issue.3, p.262, 1994.
DOI : 10.1088/0963-0252/3/3/004

L. Boufendi, J. Hermann, A. Bouchoule, B. Dubreuil, E. Stoffels et al., discharge by laser induced particle explosive evaporation, Journal of Applied Physics, vol.76, issue.1, pp.148-153, 1994.
DOI : 10.1063/1.357120

L. Boufendi, J. Gaudin, S. Huet, G. Viera, and M. Dudemaine, Detection of particles of less than 5 nm in diameter formed in an argon???silane capacitively coupled radio-frequency discharge, Applied Physics Letters, vol.79, issue.26, pp.4301-4303, 2001.
DOI : 10.1063/1.1425431

C. Bohm and J. Perrin, RF discharges at 13.56 MHz in a symmetric parallel-plate configuration, Journal of Physics D: Applied Physics, vol.24, issue.6, p.865, 1991.
DOI : 10.1088/0022-3727/24/6/011

A. Fontcuberta, P. Morral, . Roca, and . Cabarrocas, Shedding light on the growth of amorphous, polymorphous, protocrystalline and microcrystalline silicon thin films, Thin Solid Films, vol.383, issue.1-2, pp.161-164, 2001.
DOI : 10.1016/S0040-6090(00)01596-0

T. Nguyen-tran, P. R. Cabarrocas, and G. Patriarche, Study of radial growth rate and size control of silicon nanocrystals in square-wave-modulated silane plasmas, Applied Physics Letters, vol.91, issue.11, p.111501, 2007.
DOI : 10.1063/1.2784294

U. Kortshagen, Nonthermal plasma synthesis of semiconductor nanocrystals, Journal of Physics D: Applied Physics, vol.42, issue.11, p.113001, 2009.
DOI : 10.1088/0022-3727/42/11/113001

N. J. Kramer, R. J. Anthony, M. Mamunuru, E. S. Aydil, and U. R. Kortshagen, Plasma-induced crystallization of silicon nanoparticles, Journal of Physics D: Applied Physics, vol.47, issue.7, p.75202, 2014.
DOI : 10.1088/0022-3727/47/7/075202

H. Le, N. C. Forero-martinez, and H. Vach, Heating and melting of plasma-born hydrogenated silicon clusters by reactions with atomic hydrogen, Phys. Status Solidi A, vol.211, issue.2, pp.294-300, 2014.

P. Roca-i-cabarrocas, Y. Djeridane, V. D. Bui, Y. Bonnassieux, and A. Abramov, Critical issues in plasma deposition of microcrystalline silicon for thin film transistors, Solid-State Electronics, vol.52, issue.3, pp.422-426, 2008.
DOI : 10.1016/j.sse.2007.10.028

P. Roca-i-cabarrocas, T. Nguyen-tran, Y. Djeridane, A. Abramov, E. Johnson et al., Synthesis of silicon nanocrystals in silane plasmas for nanoelectronics and large area electronic devices, Journal of Physics D: Applied Physics, vol.40, issue.8, p.2258, 2007.
DOI : 10.1088/0022-3727/40/8/S04

V. Suendo, A. V. Kharchenko, P. Roca, and . Cabarrocas, The effects of RF plasma excitation frequency and doping gas on the deposition of polymorphous silicon thin films, Thin Solid Films, vol.451, issue.452, pp.451-452, 2004.
DOI : 10.1016/j.tsf.2003.11.019

V. Paillard, P. Puech, P. Roca, and . Cabarrocas, Measurement of stress gradients in hydrogenated microcrystalline silicon thin films using Raman spectroscopy, Journal of Non-Crystalline Solids, vol.299, issue.302, pp.299-302, 2002.
DOI : 10.1016/S0022-3093(02)00936-5

R. Tsu and J. G. Hernandez, Temperature dependence of silicon Raman lines, Applied Physics Letters, vol.41, issue.11, pp.1016-1018, 1982.
DOI : 10.1063/1.93394

V. Paillard, P. Puech, M. A. Laguna, R. Carles, B. Kohn et al., Improved one-phonon confinement model for an accurate size determination of silicon nanocrystals, Journal of Applied Physics, vol.86, issue.4, pp.1921-1924, 1999.
DOI : 10.1063/1.370988

G. Viera, S. Huet, and L. Boufendi, Crystal size and temperature measurements in nanostructured silicon using Raman spectroscopy, Journal of Applied Physics, vol.90, issue.8, pp.4175-4183, 2001.
DOI : 10.1063/1.1398601

W. Youn, S. Lee, J. Lee, C. Kim, N. Hwang et al., Comparison of the Deposition Behavior of Charged Silicon Nanoparticles between Floating and Grounded Substrates, The Journal of Physical Chemistry C, vol.118, issue.22, pp.11946-11953, 2014.
DOI : 10.1021/jp5001144

Q. Brulin, N. Ning, and H. Vach, Hydrogen-induced crystallization of amorphous silicon clusters in a plasma reactor, Journal of Non-Crystalline Solids, vol.352, issue.9-20, pp.9-20, 2006.
DOI : 10.1016/j.jnoncrysol.2006.01.049

M. Cavarroc, M. C. Jouanny, K. Radouane, M. Mikikian, and L. Boufendi, Self-excited instability occurring during the nanoparticle formation in an Ar???SiH4 low pressure radio frequency plasma, Journal of Applied Physics, vol.99, issue.6, p.64301, 2006.
DOI : 10.1063/1.2179973
URL : https://hal.archives-ouvertes.fr/hal-00097661

A. Bouchoule, Dusty plasmas, Physics World, vol.6, issue.8, 1999.
DOI : 10.1088/2058-7058/6/8/30

S. Lebib, P. Roca, and . Cabarrocas, Effects of ion energy on the crystal size and hydrogen bonding in plasma-deposited nanocrystalline silicon thin films, Journal of Applied Physics, vol.97, issue.10, p.104334, 2005.
DOI : 10.1063/1.1913803

D. Han, J. D. Lorentzen, J. Weinberg-wolf, L. E. Mcneil, and Q. Wang, Raman study of thin films of amorphous-to-microcrystalline silicon prepared by hot-wire chemical vapor deposition, Journal of Applied Physics, vol.94, issue.5, pp.2930-2936, 2003.
DOI : 10.1063/1.1598298

G. Yue, J. D. Lorentzen, J. Lin, D. Han, and Q. Wang, Photoluminescence and Raman studies in thin-film materials: Transition from amorphous to microcrystalline silicon, Applied Physics Letters, vol.75, issue.4, pp.492-494, 1999.
DOI : 10.1063/1.124426

W. Beyer, Hydrogen effusion: a probe for surface desorption and diffusion, Physica B: Condensed Matter, vol.170, issue.1-4, pp.105-114, 1991.
DOI : 10.1016/0921-4526(91)90111-Q

C. Rath, J. Farjas, P. Roura, F. Kail, P. Roca-i-cabarrocas et al., Thermally Induced Structural Transformations on Polymorphous Silicon, Journal of Materials Research, vol.22, issue.09, pp.2562-2567, 2005.
DOI : 10.1103/PhysRevB.25.1065

G. Sardin and J. L. Morenza, Unifying model of thermal and light-induced degradations of a-Si:H, Solar Energy Materials, vol.20, issue.3, pp.189-197, 1990.
DOI : 10.1016/0165-1633(90)90004-K

G. Talukder, J. C. Cornish, P. Jennings, G. T. Hefter, B. W. Clare et al., ???Si:H alloys, Journal of Applied Physics, vol.71, issue.1, pp.403-409, 1992.
DOI : 10.1063/1.350723

A. H. Smets and M. C. Van-de-sanden, bulk environment, Physical Review B, vol.76, issue.7, p.73202, 2007.
DOI : 10.1103/PhysRevB.76.073202

M. Moreno, R. Boubekri, P. Roca, and . Cabarrocas, Study of the effects of different fractions of large grains of ??c-Si:H:F films on the infrared absorption on thin film solar cells, Solar Energy Materials and Solar Cells, vol.100, pp.16-20, 2012.
DOI : 10.1016/j.solmat.2011.05.030

M. Van??ek, A. Poruba, Z. Reme?, J. Rosa, S. Kamba et al., Electron spin resonance and optical characterization of defects in microcrystalline silicon, Journal of Non-Crystalline Solids, vol.266, issue.269, pp.266-269, 2000.
DOI : 10.1016/S0022-3093(99)00804-2

G. Bugnon, G. Parascandolo, T. Söderström, P. Cuony, M. Despeisse et al., A New View of Microcrystalline Silicon: The Role of Plasma Processing in Achieving a Dense and Stable Absorber Material for Photovoltaic Applications, Advanced Functional Materials, vol.96, issue.17, pp.3665-3671, 2012.
DOI : 10.1002/adfm.201200299

L. Houben, C. Scholten, M. Luysberg, O. Vetterl, F. Finger et al., Growth of microcrystalline nip Si solar cells: role of local epitaxy, Journal of Non-Crystalline Solids, vol.299, issue.302, pp.299-302, 2002.
DOI : 10.1016/S0022-3093(01)01138-3

M. Moreno, G. Patriarche, P. Roca, and . Cabarrocas, Fine-tuning of the interface in high-quality epitaxial silicon films deposited by plasma-enhanced chemical vapor deposition at 200 ??C, Journal of Materials Research, vol.159, issue.13, pp.1626-1632, 2013.
DOI : 10.1116/1.584554

J. Dornstetter, S. Kasouit, P. Roca, and . Cabarrocas, Deposition of High-Efficiency Microcrystalline Silicon Solar Cells Using SiF <formula formulatype="inline"><tex Notation="TeX">$_{\bf 4}$</tex></formula>/H<formula formulatype="inline"><tex Notation="TeX">$_{\bf 2}$</tex> </formula>/Ar Mixtures, IEEE Journal of Photovoltaics, vol.3, issue.1, pp.581-586, 2013.
DOI : 10.1109/JPHOTOV.2012.2221683

J. Dornstetter, J. Wang, B. Bruneau, E. V. Johnson, P. Roca et al., Material and growth mechanism studies of microcrystalline silicon deposited from SiF4/H2/Ar gas mixtures, Can. J. Phys, pp.1-4, 2014.

Q. Zhang, E. V. Johnson, Y. Djeridane, A. Abramov, and P. R. Cabarrocas, in microcrystalline silicon pin solar cells by using a ??c-Si:F:H intrinsic layer, physica status solidi (RRL) - Rapid Research Letters, vol.62, issue.302, pp.154-156, 2008.
DOI : 10.1002/pssr.200802106

O. Astakhov, V. Smirnov, R. Carius, B. E. Pieters, Y. Petrusenko et al., Relationship between absorber layer defect density and performance of a???Si:H and ??c???Si:H solar cells studied over a wide range of defect densities generated by 2MeV electron bombardment, Solar Energy Materials and Solar Cells, vol.129, pp.17-31, 2014.
DOI : 10.1016/j.solmat.2013.12.024