-. H. Adachi, T. Mitsuyu, O. Yamazaki, and K. Wasa, epitaxial thin films on sapphire grown by rf???planar magnetron sputtering, CHAPITRES 1 ET 2 INTRODUCTION, p.736, 1986.
DOI : 10.1063/1.337423

B. Agius and M. Froment, Surfaces, interfaces et films minces, 1990.

H. N. Shareef and A. I. Kingon, Ferroelectric Thin films, Gordon and Breach), pp.193-232, 1996.

Y. Aoki, K. Fukuda, A. Numata, and J. Nishimura, Effects of Titanium Buffer Layer on Lead-Zirconate-Titanate Crystallization Processes in Sol-Gel Deposition Technique, Japanese Journal of Applied Physics, vol.34, issue.Part 1, No. 1, p.192, 1995.
DOI : 10.1143/JJAP.34.192

O. Auciello, K. D. Gifford, and A. I. Kingon, Control of structure and electrical properties of lead???zirconium???titanate???based ferroelectric capacitors produced using a layer???by???layer ion beam sputter???deposition technique, Applied Physics Letters, vol.64, issue.21, p.2873, 1994.
DOI : 10.1063/1.111400

O. Auciello, R. Dat, and R. Ramesh, Ferroelectric Thin films, pp.525-566, 1996.

F. Ayguavives, B. Ea-kim, P. Aubert, and B. Agius, optical emission spectroscopy in a reactive Ar/O2 rf magnetron sputtering discharge and Pb(ZrxTi1???x)O3 thin film composition, Applied Physics Letters, vol.73, issue.8, p.1023, 1998.
DOI : 10.1063/1.122072

I. Baiatu, R. Waiser, and K. Hardtl, dc Electrical Degradation of Perovskite-Type Titanates: III, A Model of the Mechanism, Journal of the American Ceramic Society, vol.54, issue.7, p.1663, 1990.
DOI : 10.1007/BF00552279

L. Blossfeld, W. L. Larson, L. Kammerdiner, B. T. Banko, and C. E. Wickersham, Ferroelectric Pb(Zr, Ti)O3 thin films by reactive sputtering from a metallic target, Vacuum, vol.41, issue.4-6, p.1428, 1990.
DOI : 10.1016/0042-207X(90)93979-S

E. Cattan, E. Thèse-de-doctorat, B. Cattan, H. Agius, J. P. Achard et al., Physicochemical Properties of Rf Magnetron Sputtered Lead Zirconate Titanate Thin Films, MRS Proceedings, vol.200, p.173, 1992.
DOI : 10.1063/1.331895

M. Chen, T. Wu, and J. Wu, thin films, Applied Physics Letters, vol.68, issue.10, p.1430, 1996.
DOI : 10.1063/1.116103
URL : https://hal.archives-ouvertes.fr/hal-01464322

S. Chen, I. Chen, and J. Amer, Temperature-Time Texture Transition of Pb(Zr1-xTix)O3 Thin Films: I, Role of Pb-rich Intermediate Phases, Journal of the American Ceramic Society, vol.6, issue.4, p.2332, 1994.
DOI : 10.1111/j.1151-2916.1994.tb04602.x

X. Chen, A. 1. Kingon, H. Shareef, and K. R. Bellur, thin films, Ferroelectrics, vol.151, issue.1, p.133, 1994.
DOI : 10.1063/1.336152
URL : https://hal.archives-ouvertes.fr/hal-01464322

H. Cho, C. S. Kang, C. S. Hwang, J. Kim, H. Horri et al., Structural and Electrical Properties of Ba0.5Sr0.5TiO3 Films on Ir and IrO2 Electrodes, Japanese Journal of Applied Physics, vol.36, issue.Part 2, No. 7A, p.874, 1997.
DOI : 10.1143/JJAP.36.L874

E. L. Colla, D. V. Taylor, A. K. Tagantsev, and N. Setter, Discrimination between bulk and interface scenarios for the suppression of the switchable polarization (fatigue) in Pb(Zr,Ti)O3 thin films capacitors with Pt electrodes, Applied Physics Letters, vol.72, issue.19, p.2478, 1998.
DOI : 10.1063/1.121386

E. L. Colla, S. Hong, D. V. Taylor, A. K. Tagantsev, N. Setter et al., Direct observation of region by region suppression of the switchable polarization (fatigue) in Pb(Zr,Ti)O3 thin film capacitors with Pt electrodes, Applied Physics Letters, vol.72, issue.21, p.2763, 1998.
DOI : 10.1063/1.121083

R. Dat, D. J. Lichtenwalner, and O. , ferroelectric capacitors on platinized silicon with no polarization fatigue, Applied Physics Letters, vol.64, issue.20, p.2673, 1994.
DOI : 10.1063/1.111488

M. De-keijser, G. J. Dormans, and P. J. Van-veldhoven, Lead zirconate titanate thin films on ruthenium dioxide; in situ synthesis using organometallic chemical vapor deposition, Integrated Ferroelectrics, vol.5, issue.3, p.221, 1994.
DOI : 10.1016/0022-0248(91)90261-3

M. F. Dony, F. Debal, M. Wautelet, J. P. Dauchot, M. Hecq et al., Optical Diagnostics of RF Argon and Xenon Magnetron Discharges, Journal de Physique III, vol.7, issue.9, p.1869, 1997.
DOI : 10.1051/jp3:1997228
URL : https://hal.archives-ouvertes.fr/jpa-00249686

R. Etemadi, Dépôt d'oxydes et e nitrures de silicium par double plasma microonde et radiofréquence: étude du plasma et des propriétés optiques et structurelles des couches déposées, 1996.

C. M. Ferreira, J. Loureiro, and A. Ricard, Populations in the metastable and the resonance levels of argon and stepwise ionization effects in a low???pressure argon positive column, Journal of Applied Physics, vol.57, issue.1, p.82, 1984.
DOI : 10.1063/1.335400

G. R. Fox, S. B. Krupanidhi, K. L. More, and L. F. Allard, Composition/structure/property relations of multi-ion-beam reactive sputtered lead lanthanum titanate thin films: Part I. Composition and structure analysis, Journal of Materials Research, vol.24, issue.11, p.3039, 1992.
DOI : 10.1116/1.568682

S. Honda, A. Tsujimoto, M. Watamori, and K. Oura, Effects of Post-Annealing on Oxygen Content of Indium Tin Oxide Films Fabricated by Reactive Sputtering, Japanese Journal of Applied Physics, vol.34, issue.Part 2, No. 10B, p.1386, 1995.
DOI : 10.1143/JJAP.34.L1386

R. P. Howson, A. G. Spencer, K. Oka, and R. W. Lewin, The formation and control of direct current magnetron discharges for the high???rate reactive processing of thin films, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.7, issue.3, p.1230, 1989.
DOI : 10.1116/1.576260

H. Hu and S. B. Krupanidhi, Current-voltage characteristics of ultrafine-grained ferroelectric Pb(Zr, Ti)O3 thin films, Journal of Materials Research, vol.13, issue.06, p.1484, 1994.
DOI : 10.1557/JMR.1994.1484

M. Ishida, S. Tsuji, K. Kimura, H. Matsunami, and T. Tanaka, Epitaxial growth of ferroelectric PLZT [(Pb, La)(Zr, Ti)O3] thin films, Journal of Crystal Growth, vol.45, p.393, 1978.
DOI : 10.1016/0022-0248(78)90468-2

Y. Itikawa, A. Lchimura, K. Ouda, K. Sakimoto, and K. Takayanagi, Cross Sections for Collisions of Electrons and Photons with Oxygen Molecules, Journal of Physical and Chemical Reference Data, vol.18, issue.1, p.23, 1989.
DOI : 10.1063/1.555841

B. Jaffe, R. S. Roth, and S. Marzullo, Piezoelectric Properties of Lead Zirconate???Lead Titanate Solid???Solution Ceramics, Journal of Applied Physics, vol.25, issue.6, p.809, 1954.
DOI : 10.1063/1.1721741

R. E. Jones, P. D. Maniar, A. C. Campbell, R. Moazzani, and J. Mogab, High-permittivity lead-based perovskite dielectrics for DRAM applications, Integrated Ferroelectrics, vol.454, issue.3, p.235, 1994.
DOI : 10.1063/1.106486

J. Joo, J. Seon, Y. Jeon, K. Oh, J. Roh et al., Improvement of leakage currents of Pt/(Ba,???Sr)TiO3/Pt capacitors, Applied Physics Letters, vol.70, issue.22, p.3053, 1997.
DOI : 10.1063/1.118746

L. Krusin-elbaum and M. Whittmer, Conducting Transition Metal Oxides: Possibilities for RuO[sub 2] in VLSI Metallization, Journal of The Electrochemical Society, vol.135, issue.10, p.2610, 1988.
DOI : 10.1149/1.2095391

C. V. Vasant-kumar, R. Pascual, and M. Sayer, Crystallization of sputtered lead zirconate titanate films by rapid thermal processing, Journal of Applied Physics, vol.71, issue.2, p.864, 1992.
DOI : 10.1063/1.351307

S. M. Landin and W. A. Schulze, Rapid Thermal Processing of Pb(Mg0.7Zn0.3)1/3Nb2/3O3 Multilayer Ceramic Capacitors, Journal of the American Ceramic Society, vol.73, issue.4, p.909, 1990.
DOI : 10.1016/0025-5408(82)90159-3

D. J. Lichtenwalner, R. Dat, and O. , thin film capacitors, Ferroelectrics, vol.152, issue.1, p.97, 1994.
DOI : 10.1063/1.343839

T. Maeder, Germination et croissance de films minces dePb(Zr,Ti)0 3 sur silicium passivé et substrats métalliques, Thèse de doctorat, EPFL en Suisse, 1997.

H. Maiwa, N. Lchinose, and K. Okasaki, Thin Film Electrodes for Ferroelectric Thin Films, Japanese Journal of Applied Physics, vol.33, issue.Part 1, No. 9B, p.5223, 1994.
DOI : 10.1143/JJAP.33.5223

S. Maruno, T. Kuroiwa, N. Mikami, K. Sato, S. Ohmura et al., Model of leakage characteristics of (Ba,???Sr)TiO3 thin films, Applied Physics Letters, vol.73, issue.7, p.954, 1998.
DOI : 10.1063/1.122050

T. M. Minea, Simulation particulaire d'une décharge magnétron radiofréquence . Comparaison à l'expérience, Thèse de doctorat, 1999.

F. Mohammadi, Solid State Technol, p.65, 1981.

T. Nakamura, Y. Nakao, A. Kamisawa, and H. Takasu, Electrodes, Japanese Journal of Applied Physics, vol.33, issue.Part 1, No. 9B, p.5207, 1994.
DOI : 10.1143/JJAP.33.5207

M. Ohring, The material science of thin films, 1992.

A. Okada, Some electrical and optical properties of ferroelectric lead???zirconate???lead???titanate thin films, Journal of Applied Physics, vol.48, issue.7, p.2905, 1977.
DOI : 10.1063/1.324101

R. Ramesh, H. Gilchrist, T. Sands, V. G. Keramidas, R. Haakenaasen et al., Ferroelectric La???Sr???Co???O/Pb???Zr???Ti???O/La???Sr???Co???O heterostructures on silicon via template growth, Applied Physics Letters, vol.63, issue.26, p.3592, 1993.
DOI : 10.1063/1.110106

R. Ramesh, W. K. Chan, B. Wilkens, H. Gilchrist, T. Sands et al., Fatigue and retention in ferroelectric Y???Ba???Cu???O/Pb???Zr???Ti???O/Y???Ba???Cu???O heterostructures, Applied Physics Letters, vol.61, issue.13, p.1537, 1992.
DOI : 10.1063/1.107488

D. Roy, J. Peng, and S. B. Krupanidhi, Excimer laser ablated strontium titanate thin films for dynamic random access memory applications, Applied Physics Letters, vol.60, issue.20, p.2478, 1992.
DOI : 10.1063/1.106938

S. Saito and K. Kuramasu, Thin Films, Japanese Journal of Applied Physics, vol.31, issue.Part 1, No. 1, p.135, 1992.
DOI : 10.1143/JJAP.31.135
URL : https://hal.archives-ouvertes.fr/jpa-00228773

Y. Sakashita, T. Ono, H. Segawa, K. Tominaga, and M. Okada, Preparation and electrical properties of MOCVD???deposited PZT thin films, Journal of Applied Physics, vol.69, issue.12, p.8352, 1991.
DOI : 10.1063/1.347397

R. W. Swartz, Z. Xu, D. A. Payne, T. A. Detemple, and M. A. Bradley, Ferroelectric Thin Films 200, MRS Symposium Proceedings, p.167, 1990.

J. F. Scott, L. Kamerdiner, M. Parris, S. Traynor, V. Ottenbacher et al., Switching kinetics of lead zirconate titanate submicron thin???film memories, Journal of Applied Physics, vol.64, issue.2, p.787, 1988.
DOI : 10.1063/1.341925

J. F. Scott, B. M. Melnick, J. D. Cuchiaro, R. Zuleeg, C. A. Araujo et al., Negative differential resistivity in ferroelectric thin-film current-voltage relationships, Integrated Ferroelectrics, vol.19, issue.1, p.85, 1994.
DOI : 10.1080/10584589408018662

J. F. Scott, C. A. Araujo, B. M. Melnick, L. D. Mcmillan, and R. Zuleeg, Quantitative measurement of space???charge effects in lead zirconate???titanate memories, Journal of Applied Physics, vol.70, issue.1, p.382, 1991.
DOI : 10.1063/1.350286

Y. Shintani, K. Sato, M. Sakamoto, H. Fukuda, and O. Tada, Films by RF Sputtering in PbO Vapour, Japanese Journal of Applied Physics, vol.17, issue.3, p.573, 1978.
DOI : 10.1143/JJAP.17.573

R. Singh, Rapid isothermal processing, Journal of Applied Physics, vol.63, issue.8, p.59, 1988.
DOI : 10.1063/1.340176

K. Sreenivas and M. Sayer, thin films deposited from multielement metal targets, Journal of Applied Physics, vol.64, issue.3, p.1484, 1988.
DOI : 10.1063/1.341822

K. Sreenivas, M. Sayer, and P. Garret, Properties of D.C. magnetron-sputtered lead zirconate titanate thin films, Thin Solid Films, vol.172, issue.2, p.251, 1989.
DOI : 10.1016/0040-6090(89)90653-6

A. J. Stirling and W. D. Westwood, Investigation of the Sputtering of Aluminum Using Atomic???Absorption Spectroscopy, Journal of Applied Physics, vol.41, issue.2, p.742, 1970.
DOI : 10.1063/1.1658742

A. K. Stolichnov, E. L. Tagantsev, N. Colla, and . Setter, Cold-field-emission test of the fatigued state of Pb(ZrxTi1???x)O3 films, Applied Physics Letters, vol.73, issue.10, p.1361, 1998.
DOI : 10.1063/1.122374

C. Sudhama, A. C. Campbell, P. D. Maniar, R. E. Jones, R. Moazzami et al., A model for electrical conduction in metal???ferroelectric???metal thin???film capacitors, Journal of Applied Physics, vol.75, issue.2, p.1014, 1994.
DOI : 10.1063/1.356508

Y. L. Tu and S. J. Milne, Characterization of single layer PZT (53/47) films prepared from an air-stable sol-gel route, Journal of Materials Research, vol.200, issue.12, p.3222, 1995.
DOI : 10.1557/JMR.1995.3222

N. Turova and M. I. Yanoskaya, Ferroelectric Thin films, pp.233-328, 1996.

I. Vickridge and G. Amsel, SPACES: A PC implementation of the stochastic theory of energy loss for narrow-resonance depth profiling, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, vol.45, issue.1-4, p.6, 1990.
DOI : 10.1016/0168-583X(90)90772-M

D. P. Vijay and S. B. Desu, Electrodes for PbZr[sub x]Ti[sub 1???x]O[sub 3] Ferroelectric Thin Films, Journal of The Electrochemical Society, vol.140, issue.9, p.2640, 1993.
DOI : 10.1149/1.2220877

W. L. Warren, D. Dimos, G. E. Pike, B. A. Tuttle, M. V. Raymond et al., Voltage shifts and imprint in ferroelectric capacitors, Applied Physics Letters, vol.67, issue.6, p.866, 1995.
DOI : 10.1063/1.115531

D. J. Wouters, G. J. Willems, and H. E. Maes, Electrical conductivity in ferroelectric thin films, Microelectronic Engineering, vol.29, issue.1-4, p.249, 1995.
DOI : 10.1016/0167-9317(95)00155-7

T. B. Wu, C. M. Wu, and M. L. Chen, Highly insulative barium zirconate???titanate thin films prepared by rf magnetron sputtering for dynamic random access memory applications, Applied Physics Letters, vol.69, issue.18, p.2659, 1996.
DOI : 10.1063/1.117550

S. Berg, T. Larsson, and C. , Predicting thin???film stoichiometry in reactive sputtering, Journal of Applied Physics, vol.63, issue.3, p.887, 1988.
DOI : 10.1063/1.340030

G. Blaise, Interactions plasmas froids-matériaux, Les Editions de Physique, 1987.

C. Bohm, Diagnostics et modélisation des décharges radiofréquences dans le silane et l'hélium, Thèse de doctorat, 1992.

F. S. Caluyo, Etude fondamentale et appliquée des mécanismes de transport en pulvérisation cathodique magnétron, Nouvelle thèse, 1990.

E. Cattan, Elaboration de couches minces ferroélectriques de type PZT par la méthode de pulvérisation cathodique magnétron, Thèse de doctorat, 1993.

P. J. Chantry, A simple formula for diffusion calculations involving wall reflection and low density, Journal of Applied Physics, vol.62, issue.4, p.1141, 1986.
DOI : 10.1063/1.339662

J. W. Coburn and M. Chen, Optical emission spectroscopy of reactive plasmas: A method for correlating emission intensities to reactive particle density, Journal of Applied Physics, vol.51, issue.6, p.3134, 1980.
DOI : 10.1063/1.328060

E. J. Collart, J. A. Baggerman, and R. J. Visser, radio???frequency plasma, Journal of Applied Physics, vol.70, issue.10, p.5278, 1991.
DOI : 10.1063/1.350237

R. Etemadi, Dépôt d'oxydes et e nitrures de silicium par double plasma microonde et radiofréquence: étude du plasma et des propriétés optiques et structurelles des couches déposées, 1996.

J. Helier, Reactive sputtering of metals in oxidizing atmospheres, Thin Solid Films, vol.17, issue.2, p.163, 1973.
DOI : 10.1016/0040-6090(73)90125-9

E. B. Henschke, Collision Theories of Cathode Sputtering of Metals at Low Ion Energies, Physical Review, vol.121, issue.5, p.1286, 1961.
DOI : 10.1103/PhysRev.121.1286

P. Kae-nune, Caractérisation par spectrométrie de masse des radicaux des mécanismes de dépôt dans des décharges de silane

E. Landberg, Analysis of Low-Energy Sputtering, Physical Review, vol.111, issue.1, p.91, 1958.
DOI : 10.1103/PhysRev.111.91

M. A. Lieberman, A. J. Lichtenberg, and S. E. Savas, Model of magnetically enhanced, capacitive RF discharges, IEEE Transactions on Plasma Science, vol.19, issue.2, p.189, 1991.
DOI : 10.1109/27.106813

S. Maniv, Modeling for rf discharge characteristics, Journal of Applied Physics, vol.63, issue.4, p.1022, 1988.
DOI : 10.1063/1.340001

K. Meyer, I. K. Schuller, and C. M. Falco, Thermalization of sputtered atoms, Journal of Applied Physics, vol.52, issue.9, p.5803, 1981.
DOI : 10.1063/1.329473

T. M. Minea, Simulation particulaire d'une décharge magnétron radiofréquence . Comparaison à l'expérience, Thèse de doctorat, 1999.

J. B. Pedley and M. , Thermochemical Data for Gaseous Monoxides, Journal of Physical and Chemical Reference Data, vol.12, issue.4, p.967, 1984.
DOI : 10.1063/1.555698

K. Sreenivas and M. Sayer, thin films deposited from multielement metal targets, Journal of Applied Physics, vol.64, issue.3, p.1484, 1988.
DOI : 10.1063/1.341822

A. J. Stirling and W. D. Westwood, Reactive sputtering of nickel, iron, and nickel ferrite, Thin Solid Films, vol.8, issue.3, p.199, 1971.
DOI : 10.1016/0040-6090(71)90108-8

T. Van and . Vorous, Solid State Technol, p.171, 1978.

J. B. Webb, Effect of hydrogen on the deposition rate for planar rf magnetron sputtering of hydrogenated amorphous silicon, Journal of Applied Physics, vol.53, issue.12, p.9043, 1982.
DOI : 10.1063/1.330413

W. L. Wiese, M. W. Smith, and B. M. Glennon, Atomic transition probabilities, National Standard Reference Data Series -National Bureau of Standard, vol.4, 1966.
DOI : 10.6028/NBS.NSRDS.4
URL : https://hal.archives-ouvertes.fr/jpa-00249764

G. Arlt, The influence of microstructure on the properties of ferroelectric ceramics, Ferroelectrics, vol.36, issue.1, p.217, 1990.
DOI : 10.1111/j.1151-2916.1989.tb05958.x

I. Baiatu, R. Waiser, K. Hardt, !. , and J. , dc Electrical Degradation of Perovskite-Type Titanates: III, A Model of the Mechanism, Journal of the American Ceramic Society, vol.54, issue.7, p.1663, 1990.
DOI : 10.1007/BF00552279

G. Battistig, G. Amsel, and E. , A very narrow resonance in 18O(p, ??)15N near 150 keV: Application to isotopic tracing, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, vol.61, issue.4, p.369, 1991.
DOI : 10.1016/0168-583X(91)95308-Z

G. Battistig, G. Amsel, and E. , A very narrow resonance in 18O(p, ??)15N near 150 keV: Application to isotopic tracing. II. High resolution depth profiling of 18O, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, vol.66, issue.1-2, p.1, 1992.
DOI : 10.1016/0168-583X(92)96133-J

D. W. Chapman, Some Thin???Film Properties of a New Ferroelectric Composition, Journal of Applied Physics, vol.40, issue.6, p.2381, 1969.
DOI : 10.1063/1.1657999

S. Chen and I. Chen, Thin Films, Japanese Journal of Applied Physics, vol.36, issue.Part 1, No. 7A, p.4451, 1997.
DOI : 10.1143/JJAP.36.4451
URL : https://hal.archives-ouvertes.fr/hal-01464322

R. Dat, D. J. Lichtenwalner, O. Auciello, and A. Kingon, ferroelectric capacitors on platinized silicon with no polarization fatigue, Applied Physics Letters, vol.64, issue.20, p.2673, 1994.
DOI : 10.1063/1.111488

B. E. Deal and A. S. Grove, General Relationship for the Thermal Oxidation of Silicon, Journal of Applied Physics, vol.36, issue.12, p.3770, 1965.
DOI : 10.1063/1.1713945

X. W. Du and . Chen, Model experiments on fatigue of Pb(Zr0.53Ti0.47)O3 ferroelectric thin films, Applied Physics Letters, vol.72, issue.15, p.1923, 1998.
DOI : 10.1063/1.121228

B. Ea-kim, P. Aubert, F. Ayguavives, R. Bisaro, F. Varnière et al., Growth and characterization of radio-frequency magnetron sputtered lead zirconate titanate thin films deposited on ???111??? Pt electrodes*, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.16, issue.5, p.2876, 1998.
DOI : 10.1116/1.581434

K. H. Hardt, !. , and H. Rau, PbO vapour pressure in the Pb(Ti1???x)O3 system, Solid State Communications, vol.7, issue.1, p.41, 1969.
DOI : 10.1016/0038-1098(69)90688-7

H. Hu and S. B. Krupanidhi, thin films grown with low???energy oxygen ion assistance, Journal of Applied Physics, vol.74, issue.5, p.3373, 1993.
DOI : 10.1063/1.354563

J. Joo, J. Seon, Y. Jeon, K. Oh, J. Roh et al., Improvement of leakage currents of Pt/(Ba,???Sr)TiO3/Pt capacitors, Applied Physics Letters, vol.70, issue.22, p.3053, 1997.
DOI : 10.1063/1.118746

T. Kawano, T. Sei, T. Tsuchiya, and J. , Thin Films by Sol-Gel Process and Dielectric Properties, Japanese Journal of Applied Physics, vol.30, issue.Part 1, No. 9B, p.2178, 1991.
DOI : 10.1143/JJAP.30.2178

S. B. Krupanidhi, N. Maffei, M. Sayer, and K. El-assai, films, Journal of Applied Physics, vol.54, issue.11, p.6601, 1983.
DOI : 10.1063/1.331895

L. Krusin-elbaum, M. Whittmer, and D. S. Yee, Characterization of reactively sputtered ruthenium dioxide for very large scale integrated metallization, Applied Physics Letters, vol.50, issue.26, p.1879, 1987.
DOI : 10.1063/1.97673

]. D. Lichtenwalner, R. Lichtenwalner, O. Dat, A. I. Auciello, and . Kingon, thin film capacitors, Ferroelectrics, vol.152, issue.1, p.97, 1994.
DOI : 10.1063/1.343839

J. M. Longo, P. M. Raccah, and J. B. Goudeough, Pb2M2O7???x (M = Ru, Ir, Re) ??? Preparation and properties of oxygen deficient pyrochlores, Materials Research Bulletin, vol.4, issue.3, p.191, 1969.
DOI : 10.1016/0025-5408(69)90056-7

T. Maeder, Germination et croissance de films minces dePb(Zr,Ti)0 3 sur silicium passivé et substrats métalliques, Thèse de doctorat, EPFL en Suisse, 1997.

T. Nakamura, Y. Nakao, A. Kamisawa, and H. Takasu, Electrodes, Japanese Journal of Applied Physics, vol.33, issue.Part 1, No. 9B, p.5207, 1994.
DOI : 10.1143/JJAP.33.5207

A. Okada, Some electrical and optical properties of ferroelectric lead???zirconate???lead???titanate thin films, Journal of Applied Physics, vol.48, issue.7, p.2905, 1977.
DOI : 10.1063/1.324101

J. O. Olowalafe, R. E. Jones, A. C. Campbell, R. I. Hedge, and C. J. Mogab, Effects of anneal ambients and Pt thickness on Pt/Ti and Pt/Ti/TiN interfacial reactions, Journal of Applied Physics, vol.73, issue.4, p.1764, 1993.
DOI : 10.1063/1.353212

G. A. Spierings, M. J. Ulenaers, G. L. Kampshoer, H. A. Van-hal, and P. K. Larsen, thin films by spin coating and metalorganic decomposition, Journal of Applied Physics, vol.70, issue.4, p.2290, 1991.
DOI : 10.1063/1.349422

K. Sreenivas, T. Reaney, N. Maeder, C. Setter, R. G. Jagadish et al., Investigation of Pt/Ti bilayer metallization on silicon for ferroelectric thin film integration, Journal of Applied Physics, vol.75, issue.1, p.232, 1994.
DOI : 10.1063/1.355889

A. Stolichnov and . Tagantsev, Space-charge influenced-injection model for conduction in Pb(ZrxTi1???x)O3 thin films, Journal of Applied Physics, vol.84, issue.6, p.3216, 1998.
DOI : 10.1063/1.368888

B. A. Tuttle, J. A. Voigt, O. C. Goodnow, D. L. Lamppa, T. J. Headley et al., Highly Oriented, Chemically Prepared Pb(Zr, Ti)O3 Thin Films, Journal of the American Ceramic Society, vol.29, issue.10, p.1537, 1993.
DOI : 10.1111/j.1151-2916.1993.tb03936.x

D. P. Vijay and S. B. Desu, Electrodes for PbZr[sub x]Ti[sub 1???x]O[sub 3] Ferroelectric Thin Films, Journal of The Electrochemical Society, vol.140, issue.9, p.2640, 1993.
DOI : 10.1149/1.2220877