Caractérisation in operando de l’endommagement par électromigration des interconnexions 3D : Vers un modèle éléments finis prédictif

Abstract : 3D integration, conception mode of chips stacking, aims at both systems densification and functions diversification. The downsizing of 3D interconnects dimensions and the increase of current density rise the hazard related to electromigration. An accurate knowledge of the phenomenon is required to develop a predictive modeling of the failure in order to anticipate the difficulties as soon as the stage of technologies conception. Thus, a hitherto unseen SEM in operando observation method is devised. The test structure with “high density” through silicon vias (TSV) is tested at 350 °C with an injected current density of about 1 MA/cm², and simultaneously characterized. Regular shots of micrographs inform about the voids nucleation, forced in copper lines above the TSV, and about the scenario of their evolution. Islets formation and voids curing are also observed during the tens to hundreds hours of tests. A clear relation is established between voids evolution and the one of the electrical resistance. The different tests, completed by post-mortem analyses (FIB-SEM, EBSD, TEM), demonstrate the impact of microstructure on the depletion mechanism. Grains boundaries are preferential voids nucleation sites and influence the voids evolution. A probable effect of grains size and crystallographic orientation is revealed. Finally, the study focuses on the implementation of a multiphysics modeling in a finite elements code of the voids nucleation phase. This modeling is constituted of the main terms of the migration management.
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  • HAL Id : tel-01213669, version 1

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Simon Gousseau. Caractérisation in operando de l’endommagement par électromigration des interconnexions 3D : Vers un modèle éléments finis prédictif. Science des matériaux [cond-mat.mtrl-sci]. Ecole Nationale Supérieure des Mines de Paris, 2015. Français. ⟨NNT : 2015ENMP0015⟩. ⟨tel-01213669⟩

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