Méthodologie de fabrication de transistors à base de Graphène : application aux composants optoélectroniques hyperfréquences

Abstract : Since its discovery in 2004, graphene has attracted the attention of the scientific community due to its unique properties as well as the diversity of its potential applications. Nevertheless, its implementation at industrial scale still requires many challenges including its performance stability.The objective of my PhD is to develop a technological process for the fabrication of devices integrating low-doped graphene and exhibiting stable electrical characteristics. As graphene is extremely sensitive to the environment, it is crucial to protect its surface to accurately control its properties. To do this, several technological approaches have been analyzed using the statistical characteristics of more than 500 transistors. The optimal process integrates a “protection” layer after graphene transfer and the passivation of the fabricated devices with an oxide layer. 75% of the passivated transistors were functional, with low hysteresis and time-stable performances. These criteria are essential for the integration of graphene in discrete components, in particular for optoelectronic devices.Subsequently, the technological process developed was adapted for the fabrication of graphene based coplanar waveguides for high frequency photodetection. We report on a measured photocurrent of 0.15 mA/W with a 1.55 µm laser modulated up to 40 GHz. This technology is currently studied for the fabrication of high frequency optoelectronic mixers
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Sana Mzali. Méthodologie de fabrication de transistors à base de Graphène : application aux composants optoélectroniques hyperfréquences. Micro et nanotechnologies/Microélectronique. Université Paris-Saclay, 2016. Français. ⟨NNT : 2016SACLX086⟩. ⟨tel-01504030⟩

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