Non volatile memory market worth 40.2 billion dollars by 2020, 2014. ,
Next generation memory market by technology (nonvolatile memory (mram, fram, pcm, and rram), volatile memory (dram (tram, ttram, and others) and sram (zram and others), application and geography, global forecast to, 2015. ,
Helical microtubules of graphitic carbon, Nature, vol.354, issue.6348, pp.56-58, 1991. ,
DOI : 10.1038/354056a0
Current Saturation and Electrical Breakdown in Multiwalled Carbon Nanotubes, Physical Review Letters, vol.11, issue.14, pp.3128-3131, 2001. ,
DOI : 10.1088/0957-4484/11/2/305
RAPID REVERSIBLE LIGHT???INDUCED CRYSTALLIZATION OF AMORPHOUS SEMICONDUCTORS, Applied Physics Letters, vol.15, issue.6, pp.254-257, 1971. ,
DOI : 10.1147/rd.135.0515
Who wins the nonvolatile memory race? Science, pp.3191625-1626, 2008. ,
DOI : 10.1126/science.1153909
Inducing and probing non-thermal transitions in semiconductors using femtosecond laser pulses, Nature Materials, vol.58, issue.110, pp.217-224, 2002. ,
DOI : 10.1103/PhysRevB.58.13627
Phase change materials: science and applications, 2010. ,
Overview of Phase-Change Chalcogenide Nonvolatile Memory Technology, MRS Bulletin, vol.11, issue.11, pp.829-832, 2004. ,
DOI : 10.1103/PhysRevLett.37.1504
Measurement of Lattice Temperature of Silicon during Pulsed Laser Annealing, Physical Review Letters, vol.37, issue.94, pp.356-358, 1981. ,
DOI : 10.1063/1.91963
Transitions to Defective Crystal and the Amorphous State Induced in Elemental Si by Laser Quenching, Physical Review Letters, vol.48, issue.3, pp.219-222, 1982. ,
DOI : 10.1103/PhysRevLett.48.498
Silicon melt, regrowth, and amorphization velocities during pulsed laser irradiation, Physical Review Letters, vol.50, issue.12, pp.896-899, 1983. ,
Melting temperature and explosive crystallization of amorphous silicon during pulsed laser irradiation, Physical Review Letters, vol.52, issue.26, pp.2360-2363, 1984. ,
Bulk nucleation and amorphous phase formation in highly undercooled molten silicon, Applied Physics Letters, vol.13, issue.8, pp.770-772, 1984. ,
DOI : 10.1557/PROC-13-83
Pulsed laser???induced amorphization of silicon films, Journal of Applied Physics, vol.28, issue.3, pp.1281-1289, 1991. ,
DOI : 10.1143/JJAP.28.1789
Phase transformation mechanisms involved in excimer laser crystallization of amorphous silicon films Applied Physics Letters, pp.1969-1971, 1993. ,
Pulsed laser???induced melting followed by quenching of silicon films, Journal of Applied Physics, vol.15, issue.11, pp.6592-6598, 1993. ,
DOI : 10.1088/0022-3719/15/2/019
Femtosecond laser ablation of silicon???modification thresholds and morphology, Applied Physics A, vol.74, issue.1, pp.19-25, 2002. ,
DOI : 10.1007/s003390100893
Picosecond laser???induced melting and resolidification morphology on Si, Applied Physics Letters, vol.8, issue.12, pp.864-866, 1979. ,
DOI : 10.1109/T-ED.1973.17616
Order-Disorder Transition in Single-Crystal Silicon Induced by Pulsed uv Laser Irradiation, Physical Review Letters, vol.32, issue.20, pp.1356-1358, 1979. ,
DOI : 10.1016/S0022-3697(71)80159-2
Kinetics of Phase Change. I General Theory, The Journal of Chemical Physics, vol.22, issue.12, pp.1103-1112, 1939. ,
DOI : 10.1002/zaac.19332140411
The quest for a universal memory, IEEE Spectrum, 2012. ,
Memristive devices for computing, Nature Nanotechnology, vol.7, issue.1, pp.13-24, 2013. ,
DOI : 10.1109/TCAD.2012.2185930
Phase Change Memory, Proceedings of the IEEE, vol.98, issue.12, pp.2201-2227, 2010. ,
DOI : 10.1109/JPROC.2010.2070050
Metal???Oxide RRAM, Proceedings of the IEEE, pp.1951-1970, 2012. ,
DOI : 10.1109/JPROC.2012.2190369
Reversible electrical switching phenomena in disordered structures, Physical Review Letters, vol.21, issue.20, p.1450, 1968. ,
Phase-change materials: Towards a universal memory?, Nature Materials, vol.50, issue.4, pp.265-266, 2005. ,
DOI : 10.1038/nmat1359
Phase-change materials for rewriteable data storage, Nature Materials, vol.6, issue.11, pp.824-832, 2007. ,
DOI : 10.1557/mrs2004.236
URL : http://www.nature.com/nmat/journal/v6/n12/pdf/nmat2077.pdf
Breaking the Speed Limits of Phase-Change Memory, Science, vol.42, issue.46, pp.1566-1569 ,
DOI : 10.1143/JJAP.42.800
Low-Power Switching of Phase-Change Materials with Carbon Nanotube Electrodes, Science, vol.93, issue.24, pp.568-570, 2011. ,
DOI : 10.1063/1.2963196
Multilevel memory with direct access, 2011. ,
Nanoionics-based resistive switching memories, Nature Materials, vol.18, issue.11, pp.833-840, 2007. ,
DOI : 10.1155/APEC.3.217
Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges, Advanced Materials, vol.18, issue.25-26 ,
DOI : 10.1002/cta.223
Memristor-The missing circuit element, IEEE Transactions on Circuit Theory, vol.18, issue.5, pp.507-519, 1971. ,
DOI : 10.1109/TCT.1971.1083337
Endurance retention trade off on hfo2 metal cap 1t1r bipolar rram. Electron Devices, IEEE Transactions on, vol.60, issue.3, pp.1114-1121, 2013. ,
A fast, high-endurance and scalable non volatile memory device made from asymmetric ta2o5-x tao2-x bilayer structures ,
Low-power non-volatile spintronic memory: STT-RAM and beyond, Journal of Physics D: Applied Physics, vol.46, issue.7 ,
DOI : 10.1088/0022-3727/46/7/074003
Spin-transfer torque switching in magnetic tunnel junctions and spin-transfer torque random access memory, Journal of Physics: Condensed Matter, vol.19, issue.16i=16, pp.1652090953-8984, 2007. ,
Silicon surface morphologies after femtosecond laser irradiation, Mrs Bulletin, issue.08, pp.31626-633, 2006. ,
Critical assessment of thermal models for laser sputtering at high fluences, Applied Physics Letters, vol.11, issue.24, pp.3535-3537, 1995. ,
DOI : 10.1063/1.114912
MATERIALS SCIENCE: Is Silicon's Reign Nearing Its End?, Science, vol.323, issue.5917, pp.1000-1002, 2009. ,
DOI : 10.1126/science.323.5917.1000
Intel forges ahead to 10nm, will move away from silicon at 7nm, 2015. URL http://arstechnica.com/gadgets/2015/02/intel-forges- ahead-to-10nm-will-move-away-from-silicon-at-7nm ,
The drive to miniaturization, Nature, vol.406, issue.6799, pp.1023-1026, 2000. ,
The rise of graphene, Nature Materials, vol.42, issue.3, pp.183-191, 2007. ,
DOI : 10.1038/nmat1849
Extraordinary Mobility in Semiconducting Carbon Nanotubes, Nano Letters, vol.4, issue.1, pp.35-39, 2004. ,
DOI : 10.1021/nl034841q
Unusually High Thermal Conductivity of Carbon Nanotubes, Physical Review Letters, vol.28, issue.20, pp.4613-4616, 2000. ,
DOI : 10.1051/jphys:019670028011-12095100
Carbon-based electronics, Nature Nanotechnology, vol.4, issue.10, pp.605-615, 2007. ,
DOI : 10.1038/nature06037
Electric Field Effect in Atomically Thin Carbon Films, Science, vol.306, issue.5696, pp.666-669, 2004. ,
DOI : 10.1126/science.1102896
URL : http://arxiv.org/pdf/cond-mat/0410550
Drawing conclusions from graphene, Physics World, vol.19, issue.11, p.33, 2006. ,
DOI : 10.1088/2058-7058/19/11/34
Approaching ballistic transport in suspended graphene, Nature Nanotechnology, vol.146, issue.8, pp.491-495, 0199. ,
DOI : 10.1038/nnano.2008.199
URL : http://arxiv.org/pdf/0802.2933
Superior Thermal Conductivity of Single-Layer Graphene, Nano Letters, vol.8, issue.3, pp.902-907, 2008. ,
DOI : 10.1021/nl0731872
Measurement of the Elastic Properties and Intrinsic Strength of Monolayer Graphene, Science, vol.104, issue.22, pp.385-388, 2008. ,
DOI : 10.1073/pnas.0703337104
Field emission enhancement and microstructural changes of carbon films by single pulse laser irradiation, Carbon, vol.49, issue.3, pp.1018-1024, 2011. ,
DOI : 10.1016/j.carbon.2010.11.010
Re-ordering Chaotic Carbon: Origins and Application of Textured Carbon, Advanced Materials, vol.4, issue.30, pp.4112-4123, 2012. ,
DOI : 10.1016/S0022-3093(87)80373-3
Thermal conductivity of nanocrystalline carbon films studied by pulsed photothermal reflectance, Carbon, vol.50, issue.3, pp.1428-1431, 2012. ,
DOI : 10.1016/j.carbon.2011.10.015
Plasma density induced formation of nanocrystals in physical vapor deposited carbon films, Carbon, vol.49, issue.5, pp.1733-1744, 2011. ,
DOI : 10.1016/j.carbon.2010.12.059
Nano-patterning of through-film conductivity in anisotropic amorphous carbon induced using conductive atomic force microscopy, Carbon, vol.49, issue.8, pp.492679-2682, 2011. ,
DOI : 10.1016/j.carbon.2011.02.055
Simulation of plasma flow in toroidal solenoid filters. Plasma Science, IEEE Transactions on, vol.24, issue.6, pp.1309-1318, 1996. ,
Ignition means for a cathodic arc source, 2001. ,
Apparatus for the generation of nanocluster films and methods for doing the same, 2015. ,
THE DOUBLE BEND FILTERED CATHODIC ARC TECHNOLOGY AND ITS APPLICATIONS, International Journal of Modern Physics B, vol.5, issue.9, pp.136-153, 2000. ,
DOI : 10.1109/27.553196
Abrupt Stress Induced Transformation in Amorphous Carbon Films with a Highly Conductive Transition Phase, Physical Review Letters, vol.4, issue.17, p.176101, 2008. ,
DOI : 10.1063/1.364000
Influence of oxygen on the thermal stability of amorphous hydrogenated carbon films, Journal of Applied Physics, vol.83, issue.3, pp.1349-1353, 1998. ,
DOI : 10.1103/PhysRevB.53.16
Defect and disorder reduction by annealing in hydrogenated tetrahedral amorphous carbon, Diamond and Related Materials, vol.9, issue.3-6, pp.765-770, 2000. ,
DOI : 10.1016/S0925-9635(99)00271-X
Oxidation of graphite-like carbon films with different microhardness and density, Surface and Coatings Technology, vol.174, issue.175, pp.175290-295, 2003. ,
DOI : 10.1016/S0257-8972(03)00593-0
Structure and electronic properties of a nongraphitic disordered carbon system and its heat-treatment effects, Physical Review B, vol.86, issue.21, p.214202, 2003. ,
DOI : 10.1103/PhysRev.86.1056.3
Mechanisms for the behavior of carbon films during annealing, Phys. Rev ,
Stress reduction and bond stability during thermal annealing of tetrahedral amorphous carbon, Journal of Applied Physics, vol.4, issue.10, pp.7191-7197, 1999. ,
DOI : 10.1063/1.361081
Measurements of the melting point of graphite and the properties of liquid carbon (a review for 1963???2003), Carbon, vol.43, issue.6, pp.1115-1142, 2005. ,
DOI : 10.1016/j.carbon.2004.12.027
Thermally induced sp2 clustering in tetrahedral amorphous carbon (tac) films, J. Appl. Phys, vol.9610, issue.1196111, pp.6286-6297, 1063. ,
DOI : 10.1063/1.1808918
Raman analysis of laser???annealed amorphous carbon films, Journal of Applied Physics, vol.75, issue.1, pp.521-523, 1992. ,
DOI : 10.1016/0038-1098(90)90232-Z
fraction, and cross-sectional structure of amorphous carbon films determined by x-ray reflectivity and electron energy-loss spectroscopy, Physical Review B, vol.2, issue.77, pp.11089-11103, 2000. ,
DOI : 10.1103/PhysRevB.2.973
Monitoring laser-induced microstructural changes of thin film hydrogenated amorphous carbon (a-C:H) using Raman spectroscopy, Thin Solid Films, vol.333, issue.1-2, pp.114-125, 1998. ,
DOI : 10.1016/S0040-6090(98)00848-7
Micro-Raman study of diamondlike atomic-scale composite films modified by continuous wave laser annealing, Journal of Applied Physics, vol.78, issue.9 ,
DOI : 10.1063/1.359707
Measurement of Thermodynamic Parameters of Graphite by Pulsed-Laser Melting and Ion Channeling, Physical Review Letters, vol.39, issue.4, pp.360-363, 1984. ,
DOI : 10.1063/1.92843
Time-resolved picosecond optical measurements of laser-excited graphite, Physical Review Letters, vol.38, issue.1, pp.146-149, 1986. ,
DOI : 10.1063/1.1733715
Femtosecond laser melting of graphite, Physical Review B, vol.7, issue.17, p.11986, 1989. ,
DOI : 10.1364/OL.7.000196
Microstructural studies of laser irradiated graphite surfaces, Journal of Materials Research, vol.l, issue.05, pp.980-988, 1990. ,
DOI : 10.1016/0168-583X(84)90083-1
Direct observation of laser-induced crystallization of ac: H films, Applied Physics A, vol.58, issue.2, pp.137-144, 1994. ,
Electrical properties of pulsed UV laser irradiated amorphous carbon, Applied Physics Letters, vol.92, issue.15 ,
DOI : 10.1016/j.diamond.2005.02.009
Laser annealing of amorphous carbon films, Applied Surface Science, vol.255, issue.10, pp.5620-5625, 2009. ,
DOI : 10.1016/j.apsusc.2008.10.062
Electrical properties of textured carbon film formed by pulsed laser annealing, Diamond and Related Materials, vol.23, pp.135-139, 2012. ,
DOI : 10.1016/j.diamond.2012.01.016
Graphene-Based Atomic-Scale Switches, Nano Letters, vol.8, issue.10, pp.3345-3349, 2008. ,
DOI : 10.1021/nl801774a
Nanogap Structures, ACS Nano, vol.6, issue.5, pp.4214-4221, 2012. ,
DOI : 10.1021/nn300735s
Visualizing Electrical Breakdown and ON/OFF States in Electrically Switchable Suspended Graphene Break Junctions, Nano Letters, vol.12, issue.4, pp.1772-1775, 2012. ,
DOI : 10.1021/nl203160x
URL : http://arxiv.org/pdf/1205.0292
Robust bi-stable memory operation in single-layer graphene ferroelectric memory, Applied Physics Letters, vol.99, issue.4 ,
Graphene oxide thin films for flexible nonvolatile memory applications, Nano Letters, vol.10, issue.11, pp.4381-4386, 2010. ,
Nonvolatile resistive switching in graphene oxide thin films, Applied Physics Letters, vol.95, issue.23, p.95 ,
DOI : 10.1088/0022-3727/42/13/135109
Flexible resistive switching memory device based on graphene oxide. Electron Device Letters, IEEE, issue.9, pp.311005-1007, 2010. ,
/Graphene Heterostructures, ACS Nano, vol.7, issue.4, pp.3246-3252, 2013. ,
DOI : 10.1021/nn3059136
Graphene flash memory, ACS Nano, vol.5, issue.10, pp.7812-7817, 2011. ,
Nonvolatile switching in graphene field-effect devices. Electron Device Letters, IEEE, issue.8, pp.29952-954, 2008. ,
DOI : 10.1109/led.2008.2001179
URL : http://arxiv.org/pdf/0805.4095
All graphene electromechanical switch fabricated by chemical vapor deposition Applied Physics Letters, p.183105, 2009. ,
Suspended few-layer graphene beam electromechanical switch with abrupt on-off characteristics and minimal leakage current, Applied Physics Letters, vol.2001, issue.2 ,
DOI : 10.1109/JMEMS.2007.907782
Graphene cantilever beams for nano switches, Applied Physics Letters, vol.101, issue.9, p.4738891, 1063. ,
DOI : 10.1103/PhysRevLett.56.930
Studies of graphene-based nanoelectromechanical switches, Nano Research, vol.11, issue.2, pp.82-87, 2012. ,
DOI : 10.1166/jnn.2011.3154
Nanoscale bipolar and complementary resistive switching memory based on amorphous carbon. Electron Devices, IEEE Transactions on, issue.11, pp.583933-3939, 2011. ,
DOI : 10.1109/ted.2011.2164615
URL : http://nano.eecs.berkeley.edu/publications/TED_2011_RRAM.pdf
Unipolar resistive switching properties of diamondlike carbon-based rram devices. Electron Device Letters, IEEE, vol.32, issue.6, pp.803-805, 2011. ,
Resistance switching at the nanometre scale in amorphous carbon, New Journal of Physics, vol.13, issue.1, p.13020, 2011. ,
DOI : 10.1088/1367-2630/13/1/013020
Carbon based resistive memory. arXiv preprint, 2009. ,
DOI : 10.1109/iedm.2008.4796740
URL : http://arxiv.org/abs/0901.4439
A new paradigm in the design of energy-efficient digital circuits using laterally-actuated double-gate NEMs, Proceedings of the 16th ACM/IEEE international symposium on Low power electronics and design, ISLPED '10, 2010. ,
DOI : 10.1145/1840845.1840848
Hybrid NEMS???CMOS integrated circuits: a novel strategy for energy-efficient designs, IET Computers & Digital Techniques, vol.3, issue.6, 2009. ,
DOI : 10.1049/iet-cdt.2008.0148
Carbon Nanotube-Based Nonvolatile Random Access Memory for Molecular Computing, Science, vol.289, issue.5476, pp.94-97, 2000. ,
DOI : 10.1126/science.289.5476.94
Breakdown current density of graphene nanoribbons, Applied Physics Letters, vol.94, issue.24 ,
DOI : 10.1103/PhysRevB.79.155413
URL : http://arxiv.org/pdf/0906.4156
Breakdown current density of cvd-grown multilayer graphene interconnects. Electron Device Letters, IEEE, vol.32, issue.4, pp.557-559, 2011. ,
Thermal dissipation and variability in electrical breakdown of carbon nanotube devices, Physical Review B, vol.82, issue.20, p.205406, 2010. ,
DOI : 10.1021/nl803835z
Engineering Carbon Nanotubes and Nanotube Circuits Using Electrical Breakdown, Science, vol.292, issue.5517, pp.706-709, 2001. ,
DOI : 10.1126/science.1058782
URL : http://www.cc.gatech.edu/computing/nano/documents/Avouris - Engineering Carbon Nanotubes Gates and Nanotube C.pdf
Resistive Switching in Nanogap Systems on SiO2 Substrates, Small, vol.7, issue.24, pp.2910-2915, 2009. ,
DOI : 10.1002/smll.200901100
URL : http://arxiv.org/pdf/0906.5100
Resistive Switches and Memories from Silicon Oxide, Nano Letters, vol.10, issue.10, pp.4105-4110, 2010. ,
DOI : 10.1021/nl102255r
Silicon Oxide: A Non-innocent Surface for Molecular Electronics and Nanoelectronics Studies, Journal of the American Chemical Society, vol.133, issue.4, pp.941-948, 2011. ,
DOI : 10.1021/ja108277r
URL : http://arxiv.org/pdf/1010.4853
Highly transparent nonvolatile resistive memory devices from silicon oxide and graphene, Nature Communications, vol.29 ,
DOI : 10.1557/mrs2004.236
URL : http://www.nature.com/articles/ncomms2110.pdf
In situ imaging of the conducting filament in a silicon oxide resistive switch Scientific Reports ,
Carbon nanotube network-silicon oxide non-volatile switches, Nature Communications, vol.2 ,
DOI : 10.1103/PhysRevLett.106.256801
URL : http://www.nature.com/articles/ncomms6673.pdf
Review of metal oxide films deposited by filtered cathodic vacuum arc technique, Materials Science and Engineering: R: Reports, vol.52, issue.1-3, p.521 ,
DOI : 10.1016/j.mser.2006.04.003
Formation of thick textured carbon film using filtered cathodic vacuum arc technique, Nanoelectronics Conference (INEC), 2013 IEEE 5th International, pp.78-80, 2013. ,
DOI : 10.1109/inec.2013.6465959
Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils, Science, vol.5, issue.4, pp.1312-1314, 2009. ,
DOI : 10.1038/nnano.2008.67
Transfer of Large-Area Graphene Films for High-Performance Transparent Conductive Electrodes, Nano Letters, vol.9, issue.12, pp.4359-4363, 2009. ,
DOI : 10.1021/nl902623y
Energy Dissipation in Graphene Field-Effect Transistors, Nano Letters, vol.9, issue.5, pp.1883-1888, 2009. ,
DOI : 10.1021/nl803883h
URL : http://arxiv.org/pdf/0912.0531
Raman Spectrum of Graphite, The Journal of Chemical Physics, vol.24, issue.3, pp.1126-1130, 1970. ,
DOI : 10.1063/1.1712428
Raman spectroscopy of amorphous, nanostructured, diamond-like carbon, and nanodiamond, Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences, vol.362, issue.1824 ,
DOI : 10.1098/rsta.2004.1452
Oxidation Stability of Multiwalled Carbon Nanotubes for Catalytic Applications, Chemistry of Materials, vol.22, issue.15, pp.4462-4470, 2010. ,
DOI : 10.1021/cm101234d
Monitoring oxidation of multiwalled carbon nanotubes by Raman spectroscopy, Journal of Raman Spectroscopy, vol.21, issue.465, pp.728-736, 2007. ,
DOI : 10.1002/jrs.1686
Logiciel open source gratuit de calcul numerique ,
Bootstrap Methods for Standard Errors, Confidence Intervals, and Other Measures of Statistical Accuracy, Statistical Science, vol.1, issue.1, pp.54-75, 1986. ,
DOI : 10.1214/ss/1177013815
High-resolution electron microscopy for materials science, 2012. ,
DOI : 10.1007/978-4-431-68422-0
Photothermal Deoxygenation of Graphite Oxide with Laser Excitation in Solution and Graphene-Aided Increase in Water Temperature, The Journal of Physical Chemistry Letters, vol.1, issue.19, pp.2804-2809, 2010. ,
DOI : 10.1021/jz1011143
Pulsed laser assisted reduction of graphene oxide, Carbon, vol.49, issue.7, pp.2431-2436, 2011. ,
DOI : 10.1016/j.carbon.2011.01.067
Direct imprinting of microcircuits on graphene oxides film by femtosecond laser reduction, Nano Today, vol.5, issue.1, pp.15-20, 2010. ,
DOI : 10.1016/j.nantod.2009.12.009
Integrated allphotonic non-volatile multi-level memory, Nature Photon, 2015. ,
Patterning and Electronic Tuning of Laser Scribed Graphene for Flexible All-Carbon Devices, ACS Nano, vol.6, issue.2, pp.1395-1403 ,
DOI : 10.1021/nn204200w
Formation of Graphene Features from Direct Laser-Induced Reduction of Graphite Oxide, The Journal of Physical Chemistry Letters, vol.1, issue.18 ,
DOI : 10.1021/jz100790y
Pulsed laser ablation of solids: transition from normal vaporization to phase explosion, Applied Physics A Materials Science & Processing, vol.73, issue.2, pp.199-208, 2001. ,
DOI : 10.1007/s003390000686
Refractive indices of pyrolytic graphite, amorphous carbon, and flame soot in the temperature range 25?? to 600??C, Combustion and Flame, vol.94, issue.4, pp.381-396, 1993. ,
DOI : 10.1016/0010-2180(93)90121-I
The properties of liquid carbon, International Journal of Thermophysics, vol.11, issue.4, pp.789-796, 1990. ,
DOI : 10.1007/BF01184345
Temperature dependence of Raman scattering by disordered carbon materials, Carbon, vol.24, issue.3, pp.365-369, 1986. ,
DOI : 10.1016/0008-6223(86)90239-3
Carbon oxidation kinetics from evolved carbon oxide analysis during temperature-programmed oxidation, Carbon, vol.39, issue.5, pp.725-732, 2001. ,
DOI : 10.1016/S0008-6223(00)00189-5
Effect of initial sp3 content on bonding structure evolution of amorphous carbon upon pulsed laser annealing, Diamond and Related Materials, vol.30, issue.0, pp.48-52, 2012. ,
DOI : 10.1016/j.diamond.2012.09.008
A model for pulsed laser melting of graphite, Journal of Applied Physics, vol.18, issue.11, pp.4374-4382, 1985. ,
DOI : 10.1103/PhysRevB.21.2415
Kinetic measurement and modeling of carbon oxidation, Energy & Fuels, vol.5, issue.1, pp.214-221, 1991. ,
DOI : 10.1021/ef00025a035
Ultrafast electronic disordering during femtosecond laser melting of GaAs, Physical Review Letters, vol.31, issue.8, pp.1023-1026, 1991. ,
DOI : 10.1016/0038-1101(88)90306-1
Nonthermal melting in semiconductors measured at femtosecond resolution, Nature, issue.6824, pp.41065-68, 2001. ,
DOI : 10.1038/35065045
URL : https://hal.archives-ouvertes.fr/hal-00523521
Thermal and nonthermal effects in femtosecond laser ablation and damage of transparent materials, 2000. ,
Current-induced cleaning of graphene, Applied Physics Letters, vol.91, issue.16, p.163513, 2007. ,
DOI : 10.1038/nature05555
Intrinsic Response of Graphene Vapor Sensors, Nano Letters, vol.9, issue.4, pp.1472-1475, 2009. ,
DOI : 10.1021/nl8033637
Electronic Transport Properties of Individual Chemically Reduced Graphene Oxide Sheets, Nano Letters, vol.7, issue.11, pp.3499-3503, 2007. ,
DOI : 10.1021/nl072090c
Generalized Formula for the Electric Tunnel Effect between Similar Electrodes Separated by a Thin Insulating Film, Journal of Applied Physics, vol.16, issue.6, pp.1793-1803, 1963. ,
DOI : 10.1063/1.1753783
Room-Temperature Gating of Molecular Junctions Using Few-Layer Graphene Nanogap Electrodes, Nano Letters, vol.11, issue.11, pp.4607-4611, 2011. ,
DOI : 10.1021/nl202065x
High-yield fabrication of nm-size gaps in monolayer CVD graphene, Nanoscale, vol.34, issue.13, pp.7249-7254 ,
DOI : 10.1063/1.1702682
Negative Thermal Expansion Coefficient of Graphene Measured by Raman Spectroscopy, Nano Letters, vol.11, issue.8, pp.3227-3231, 2011. ,
DOI : 10.1021/nl201488g
Field Electron Emission Characteristics and Physical Mechanism of Individual Single-Layer Graphene, ACS Nano, vol.4, issue.11, pp.6332-6336, 2010. ,
DOI : 10.1021/nn101719r
Experimental and computational study of field emission characteristics from amorphous carbon single nanotips grown by carbon contamination. i. experiments and computation, Philosophical Magazine Part B, vol.82, issue.9, pp.987-1007, 2002. ,
Materials: Peeling and sharpening multiwall nanotubes, Nature, vol.397, issue.6796, pp.586-586, 2000. ,
DOI : 10.1038/17755
Graphene at High Bias: Cracking, Layer by Layer Sublimation, and Fusing, Nano Letters, vol.12, issue.4, pp.1873-1878 ,
DOI : 10.1021/nl204236u