). Jung, Y. Bonnassieux, and G. Horowitz, A Physically-Based Compact Model for Low-Voltage Organic Field-Effect Transistors, Appendix B Publications Journal articles, issue.1

S. Jung, A. Plews, A. Nejim, Y. Bonnassieux, and G. Horowitz, Gaussian Disorder and Gate Voltage Power-Law Dependence of Mobility and Contact Resistance in Organic Field-Effect Transistors

S. Jung, J. Woo-jin, V. Mosser, Y. Bonnassieux, and G. Horowitz, A New Model and Extraction Method for Organic Field-Effect Transistors with Power-Law Contact Resistance and Mobiltiy

J. Woo-jin, S. Jung, Y. Bonnassieux, G. H. , A. Stamateri et al., Argiris Laskarakis and Stergios Logothetidis Universal Compact Model for Organic Solar Cell A TIPS-TPDO-tetraCN-based n-type organic field-effect transistors with cross-linked PMMA polymer gate dielectric, Applied Materials and Interfaces, pp.14701-14708, 2016.

). Jung, C. Kim, Y. Bonnassieux, G. Jung, M. Al-bariqi et al., Oral (6) Fundamental difference in the electrical characteristics of organic rectifying diodes under nondegenerate and degenerate regime related with a Gaussian density-of-states Oral (7) Defining the injection barrier at metal/organic semiconductor interface with a Gaussian density-of-states Oral (8) Mohammed Albariqi Ultra-thin gate dielectric for organic field-effect transistors Poster (9) Sungyeop Jung The effect of width of Gaussian density-of-states function on electrical characteristics of organic rectifying diodes Oral (10) Sungyeop Jung Physical modeling of the threshold in organic field-effect transistors Modeling the threshold voltage and sub-threshold current of organic field-effect transistors Oral (1) IEEE Electon Device Letters, European Materials Research Society Spring Meeting (E-MRS) International Thin-Film Transistor Conference (ITC) International Conference on Organic Electronics (ICOE) Matériaux et Nanostructures Pi-Conjugués (MNPC), 2013.

W. H. Brown and T. Poon, Introduction to Organic Chemistry, 2004.

G. Inzelt, Conducting Polymers: A New Era in Electrochemistry, Monographs in Electrochemistry, 2008.
DOI : 10.1007/978-3-642-27621-7

H. Naarmann, Ullmann's Encyclopedia of Industrial Chemistry, 2002.

G. A. Chamberlain, Organic solar cells: A review, Solar Cells, vol.8, issue.1, pp.47-83, 1983.
DOI : 10.1016/0379-6787(83)90039-X

H. Hoppe and N. S. Sariciftci, Organic solar cells: An overview, Journal of Materials Research, vol.87, issue.07, pp.1924-1945, 2011.
DOI : 10.1016/j.tsf.2003.10.087

C. W. Tang and S. A. Vanslyke, Organic electroluminescent diodes, Applied Physics Letters, vol.78, issue.12, pp.913-915, 1987.
DOI : 10.1021/ja01593a006

F. Gutmann and L. E. Lyons, Organic Semiconductors, 1967.

A. Tsumura, H. Koezuka, and T. Ando, Macromolecular electronic device: Field???effect transistor with a polythiophene thin film, Applied Physics Letters, vol.117, issue.18, pp.1210-1212, 1986.
DOI : 10.1080/00268948508074591

M. Singh, H. M. Haverinen, P. Dhagat, and G. E. Jabbour, Inkjet Printing-Process and Its Applications, Advanced Materials, vol.17, issue.6, pp.673-685, 2010.
DOI : 10.1002/10.1039/B903531A

S. Electronics, S. Galaxy, and . Edge, Available: http://www.samsung.com/us/explore/galaxy-s-6-features-and-specs, 2015.

S. Reineke, F. Lindner, G. Schwartz, N. Seidler, K. Walzer et al., White organic light-emitting diodes with fluorescent tube efficiency, Nature, vol.245, issue.7244, pp.234-238, 2009.
DOI : 10.1117/12.780249

B. W. D-'andrade and S. R. Forrest, White Organic Light-Emitting Devices for Solid-State Lighting, Advanced Materials, vol.123, issue.18, pp.1585-1595, 2004.
DOI : 10.1002/adma.200400684

. Infinitypv, Organic Solar Foil Available: https, 2016.

Y. Nakajima, Y. Fujisaki, T. Takei, H. Sato, M. Nakata et al., Low-temperature fabrication of 5-in. QVGA flexible AMOLED display driven by OTFTs using olefin polymer as the gate insulator, Journal of the Society for Information Display, vol.19, issue.12, pp.861-867, 2011.
DOI : 10.1889/JSID19.4.316

S. Steudel, K. Myny, S. Schols, P. Vicca, S. Smout et al., Design and realization of a flexible QQVGA AMOLED display with organic TFTs, Organic Electronics, vol.13, issue.9, pp.1729-1735, 2012.
DOI : 10.1016/j.orgel.2012.05.034

. Plasticlogics, Display Platform with Gate and Source Drivers, 2016.

T. Someya, T. Sekitani, S. Iba, Y. Kato, H. Kawaguchi et al., A large-area, flexible pressure sensor matrix with organic field-effect transistors for artificial skin applications, Proceedings of the National Academy of Sciences, vol.98, issue.9, pp.9966-9970, 2004.
DOI : 10.1073/pnas.091588098

T. Someya, Y. Kato, S. Iba, Y. Noguchi, T. Sekitani et al., Integration of Organic FETs With Organic Photodiodes for a Large Area, Flexible, and Lightweight Sheet Image Scanners, IEEE Transactions on Electron Devices, vol.52, issue.11, pp.2502-2511, 2005.
DOI : 10.1109/TED.2005.857935

I. Nausieda, K. Ryu, I. Kymissis, A. I. Akinwande, V. Bulovi? et al., An Organic Active-Matrix Imager, IEEE Transactions on Electron Devices, vol.55, issue.2, pp.527-532, 2008.
DOI : 10.1109/TED.2007.913081
URL : http://www.rle.mit.edu/organic/documents/NausiedaRyuKymissisAkinwandeBulovicSodini-OrganicActive-MatrixImager-IEEETED2008.pdf

P. Lin and F. Yan, Organic Thin-Film Transistors for Chemical and Biological Sensing, Advanced Materials, vol.26, issue.1, pp.34-51, 2011.
DOI : 10.1016/j.bios.2011.05.025
URL : http://hdl.handle.net/10397/11453

H. Bässler, Charge Transport in Disordered Organic Photoconductors a Monte Carlo Simulation Study, physica status solidi (b), vol.35, issue.1, pp.15-56, 1993.
DOI : 10.1080/13642819208204920

W. Pasveer, J. Cottaar, C. C. Tanase, R. Coehoorn, P. Bobbert et al., Unified Description of Charge-Carrier Mobilities in Disordered Semiconducting Polymers, Physical Review Letters, vol.175, issue.20, p.206601, 2005.
DOI : 10.1103/PhysRevLett.32.303

S. D. Baranovskii, Theoretical description of charge transport in disordered organic semiconductors, physica status solidi (b), vol.88, issue.136, pp.487-525, 2014.
DOI : 10.1103/PhysRevB.88.125202

J. Colinge and C. A. Colinge, Physics of Semiconductor Devices, 2002.

R. S. Muller and T. I. Kamins, Device Electronics for Integrated Circuits, 2003.

I. Mcculloch, M. Heeney, C. Bailey, K. Genevicius, I. Macdonald et al., Liquid-crystalline semiconducting polymers with high charge-carrier mobility, Nature Materials, vol.4, issue.4, pp.328-333, 2006.
DOI : 10.1557/PROC-814-I12.1

H. Sirringhaus, T. Kawase, R. H. Friend, T. Shimoda, M. Inbasekaran et al., High-Resolution Inkjet Printing of All-Polymer Transistor Circuits, Science, vol.87, issue.5398, pp.2123-2126, 2000.
DOI : 10.1063/1.373452

D. J. Gundlach, J. E. Royer, S. K. Park, S. Subramanian, O. D. Jurchescu et al., Contact-induced crystallinity for high-performance soluble acene-based transistors and circuits, Nature Materials, vol.72, issue.3, pp.216-221, 2008.
DOI : 10.1038/nmat2122

J. E. Anthony, The Larger Acenes: Versatile Organic Semiconductors, Angewandte Chemie International Edition, vol.9, issue.3, pp.452-483, 2008.
DOI : 10.1016/j.crci.2005.11.014

K. Baeg, Polymer Dielectrics and Orthogonal Solvent Effects for High-Performance Inkjet-Printed Top-Gated P-Channel Polymer Field-Effect Transistors, ETRI Journal, vol.33, issue.6, pp.887-896, 2011.
DOI : 10.1002/adma.200800735

A. M. Gaikwad, Y. Khan, A. E. Ostfeld, S. Pandya, S. Abraham et al., Identifying orthogonal solvents for solution processed organic transistors, Organic Electronics, vol.30, pp.18-29, 2016.
DOI : 10.1016/j.orgel.2015.12.008
URL : https://doi.org/10.1016/j.orgel.2015.12.008

G. Horowitz, F. Kouki, P. Spearman, and D. Fichou, Evidence for n-type conduction in a perylene tetracarboxylic diimide derivative, Advanced Materials, vol.54, issue.3, pp.242-245, 1996.
DOI : 10.1139/p92-189

D. Bode, C. Rolin, S. Schols, M. Debucquoy, S. Steudel et al., Noise-Margin Analysis for Organic Thin-Film Complementary Technology, IEEE Transactions on Electron Devices, vol.57, issue.1, pp.201-208, 2009.
DOI : 10.1109/TED.2009.2035546

T. N. Ng, D. E. Schwartz, L. L. Lavery, G. L. Whiting, B. Russo et al., Scalable printed electronics: an organic decoder addressing ferroelectric non-volatile memory, Scientific Reports, vol.95, issue.1, pp.1-7, 2012.
DOI : 10.1063/1.3276913
URL : http://www.nature.com/articles/srep00585.pdf

G. Guillaud, M. Sadoun, M. Maitrot, and J. Simon, Field-effect transistors based on intrinsic molecular semiconductors, Chemical Physics Letters, vol.167, issue.6, pp.503-506, 1990.
DOI : 10.1016/0009-2614(90)85459-P

C. W. Tang, Two???layer organic photovoltaic cell, Applied Physics Letters, vol.38, issue.2, pp.183-187, 1986.
DOI : 10.1063/1.1743311

C. W. Tang and S. A. Vanslyke, Organic electroluminescent diodes, Applied Physics Letters, vol.78, issue.12, pp.913-915, 1987.
DOI : 10.1021/ja01593a006

N. C. Greenham, S. C. Moratti, D. Bradley, and R. H. Friend, Efficient light-emitting diodes based on polymers with high electron affinities, Nature, vol.365, issue.6447, pp.628-630, 1993.
DOI : 10.1038/365628a0

M. Hiramoto, H. Fujiwara, M. Yokoyama, M. Strukelj, F. Papadimitrakopoulos et al., like behavior in three???layered organic solar cells having a co???deposited interlayer of pigments, Journal of Applied Physics, vol.76, issue.8, pp.3781-3787, 1992.
DOI : 10.1246/cl.1990.327

L. Chua, J. Zaumseil, J. Chang, E. C. Ou, P. K. Ho et al., General observation of n-type field-effect behaviour in organic semiconductors, Nature, vol.401, issue.7030, pp.194-199, 2005.
DOI : 10.1038/44359

A. Facchetti, Semiconductors for organic transistors, Materials Today, vol.10, issue.3, pp.28-37, 2007.
DOI : 10.1016/S1369-7021(07)70017-2
URL : https://doi.org/10.1016/s1369-7021(07)70017-2

H. Yan, Z. Chen, Y. Zheng, C. Newman, J. R. Quinn et al., A high-mobility electron-transporting polymer for printed transistors, Nature, vol.10, issue.7230, pp.679-686, 2009.
DOI : 10.1126/science.265.5179.1684

J. E. Anthony, A. Facchetti, M. Heeney, S. R. Marder, and X. Zhan, n-Type Organic Semiconductors in Organic Electronics, Advanced Materials, vol.106, issue.34, pp.3876-3892, 2010.
DOI : 10.1002/adma.200903628

H. Klauk, Organic thin-film transistors, Chemical Society Reviews, vol.372, issue.7, pp.2643-2666, 2010.
DOI : 10.1002/adma.200902740

Y. Zhao, Y. Guo, and Y. Liu, 25th Anniversary Article: Recent Advances in n-Type and Ambipolar Organic Field-Effect Transistors, Advanced Materials, vol.49, issue.38, pp.5372-5391, 2013.
DOI : 10.1039/C2CC37266E

B. A. Jones, A. Facchetti, M. R. Wasielewski, and T. J. Marks, Tuning Orbital Energetics in Arylene Diimide Semiconductors. Materials Design for Ambient Stability of n-Type Charge Transport, Journal of the American Chemical Society, vol.129, issue.49, pp.15-259, 2007.
DOI : 10.1021/ja075242e

J. H. Oh, S. Suraru, W. Lee, M. Könemann, H. W. Höffken et al., High-Performance Air-Stable n-Type Organic Transistors Based on Core-Chlorinated Naphthalene Tetracarboxylic Diimides, Advanced Functional Materials, vol.268, issue.13, pp.2148-2156, 2010.
DOI : 10.1002/anie.200904215

J. Soeda, T. Uemura, Y. Mizuno, A. Nakao, Y. Nakazawa et al., High Electron Mobility in Air for N,N???-1H,1H-Perfluorobutyldicyanoperylene Carboxydi-imide Solution-Crystallized Thin-Film Transistors on Hydrophobic Surfaces, Advanced Materials, vol.22, issue.32, pp.3681-3685, 2011.
DOI : 10.1002/adma.201000480

Y. Chung, E. Verploegen, A. Vailionis, Y. Sun, Y. Nishi et al., Controlling Electric Dipoles in Nanodielectrics and Its Applications for Enabling Air-Stable n-Channel Organic Transistors, Nano Letters, vol.11, issue.3, pp.1161-1165, 2011.
DOI : 10.1021/nl104087u

S. P. Senanayak, V. K. Sangwan, J. J. Mcmorrow, K. Everaerts, Z. Chen et al., Self-Assembled Nanodielectrics for High-Speed, Low-Voltage Solution-Processed Polymer Logic Circuits, Advanced Electronic Materials, vol.24, issue.12, p.1500226, 2015.
DOI : 10.1002/adfm.201303374

C. Di, J. Li, G. Yu, Y. Xiao, Y. Guo et al., Trifluoromethyltriphenodioxazine: Air-Stable and High-Performance n-Type Semiconductor, Organic Letters, vol.10, issue.14, pp.3025-3028, 2008.
DOI : 10.1021/ol8008667

Y. Nicolas, F. Castet, M. Devynck, P. Tardy, L. Hirsch et al., TIPS-triphenodioxazine versus TIPS-pentacene: Enhanced electron mobility for n-type organic field-effect transistors, Organic Electronics, vol.13, issue.8, pp.1392-1400, 2012.
DOI : 10.1016/j.orgel.2012.04.010

T. Sekitani, U. Zschieschang, H. Klauk, and T. Someya, Flexible organic transistors and circuits with extreme bending stability, Nature Materials, vol.517, issue.12, pp.1-8, 2010.
DOI : 10.1039/b610611k

G. H. Gelinck, H. E. Huitema, E. Van-veenendaal, E. Cantatore, L. Schrijnemakers et al., Flexible active-matrix displays and shift registers based on solution-processed organic transistors, Nature Materials, vol.3, issue.2, pp.106-110, 2004.
DOI : 10.1038/nmat1061

D. K. Hwang, C. Fuentes-hernandez, J. B. Kim, W. J. Jr, and B. Kippelen, Flexible and stable solution-processed organic field-effect transistors, Organic Electronics, vol.12, issue.7, pp.1108-1113, 2011.
DOI : 10.1016/j.orgel.2011.04.002

Y. Fujisaki, Current Status of Nonvolatile Semiconductor Memory Technology, Japanese Journal of Applied Physics, vol.49, issue.10, pp.100-101, 2010.
DOI : 10.1143/JJAP.49.100001

W. Warta, R. Stehle, and N. Karl, Ultrapure, high mobility organic photoconductors, Applied Physics A Solids and Surfaces, vol.20, issue.3, pp.163-170, 1985.
DOI : 10.1007/BF00624938

R. A. Laudise, C. Kloc, P. G. Simpkins, and T. Siegrist, Physical vapor growth of organic semiconductors, Journal of Crystal Growth, vol.187, issue.3-4, pp.3-4, 1998.
DOI : 10.1016/S0022-0248(98)00034-7

V. Podzorov, S. E. Sysoev, E. Loginova, V. M. Pudalov, and M. E. Gershenson, Single-crystal organic field effect transistors with the hole mobility ???8 cm2/V???s, Applied Physics Letters, vol.83, issue.17, pp.3504-3508, 2003.
DOI : 10.1063/1.1568157

N. Zaitseva, L. Carman, A. Glenn, J. Newby, M. Faust et al., Application of solution techniques for rapid growth of organic crystals, Journal of Crystal Growth, vol.314, issue.1, pp.163-170, 2011.
DOI : 10.1016/j.jcrysgro.2010.10.139

G. Horowitz, Organic Field-Effect Transistors, Advanced Materials, vol.10, issue.5, pp.365-377, 1998.
DOI : 10.1002/(SICI)1521-4095(199803)10:5<365::AID-ADMA365>3.0.CO;2-U
URL : https://hal.archives-ouvertes.fr/hal-00133401

C. Nacci, F. Ample, D. Bleger, S. Hecht, C. Joachim et al., Conductance of a single flexible molecular wire composed of alternating donor and acceptor units, Nature Communications, vol.5, p.7397, 2015.
DOI : 10.1021/ma052683e

L. Grill, M. Dyer, L. Lafferentz, M. Persson, M. V. Peters et al., Nano-architectures by covalent assembly of molecular building blocks, Nature Nanotechnology, vol.128, issue.11, pp.687-691, 2007.
DOI : 10.1038/35098059

C. Nacci, A. Viertel, S. Hecht, and L. Grill, Covalent Assembly and Characterization of Nonsymmetrical Single-Molecule Nodes, Angew. Chem, vol.128, issue.44, pp.13-928, 2016.

A. Einstein, ??ber einen die Erzeugung und Verwandlung des Lichtes betreffenden heuristischen Gesichtspunkt, Annalen der Physik, vol.12, issue.6, pp.132-148, 1905.
DOI : 10.1002/andp.19053220607

E. U. Condon, Note on the External Photoelectric Effect of Semi-Conductors, Physical Review, vol.52, issue.12, p.1089, 1938.
DOI : 10.1103/PhysRev.52.1039

L. Apker, E. Taft, and J. Dickey, Photoelectric Emission and Contact Potentials of Semiconductors, Physical Review, vol.72, issue.10, p.1462, 1948.
DOI : 10.1021/ja01250a036

P. W. Anderson, Absence of Diffusion in Certain Random Lattices, Physical Review, vol.23, issue.5, pp.1492-1505, 1958.
DOI : 10.1016/S0031-8914(57)92891-4

N. F. Mott, Electrons in disordered structures, Advances in Physics, vol.57, issue.61, pp.49-144, 1967.
DOI : 10.1080/14786436108243361

M. H. Cohen, H. Fritzsche, and S. R. Ovshinsky, Simple Band Model for Amorphous Semiconducting Alloys, Physical Review Letters, vol.3, issue.20, p.1065, 1969.
DOI : 10.1149/1.2426182

R. A. Street, Hydrogenated Amorphous Silicon, 2005.
DOI : 10.1017/CBO9780511525247

C. W. Peterson, J. H. Dinan, and T. E. Fischer, Photoemission from Amorphous Silicon, Physical Review Letters, vol.15, issue.13, p.861, 1970.
DOI : 10.1103/PhysRevLett.23.1167

N. Mott, The mobility edge since 1967, Journal of Physics C: Solid State Physics, vol.20, issue.21, p.3075, 1987.
DOI : 10.1088/0022-3719/20/21/008

K. Tanaka and S. Nakayama, Where is the Mobility Edge in Amorphous Semiconductors, J. Optoelectron. Adv. M, vol.2, pp.5-11, 2000.

H. Bässler, Hopping and Related Phenomena: Advances in Disordered Semiconductors, Singapore: World Scientific, vol.2, 1990.

W. D. Gill, ???vinylcarbazole, Journal of Applied Physics, vol.2, issue.12, pp.5033-5042, 1972.
DOI : 10.1103/PhysRevLett.28.813

M. Abkowitz, Behavior of the drift mobility in the glass transition region of some hole???transporting amorphous organic films, Journal of Applied Physics, vol.18, issue.5, pp.3453-3459, 1981.
DOI : 10.1103/PhysRevB.15.1024

S. J. Santos-lemus and J. Hirsch, Hole transport in isopropyl carbazole???polycarbonate mixtures, Philosophical Magazine Part B, vol.40, issue.1, p.25, 1986.
DOI : 10.1088/0022-3719/1/6/308

D. V. Lang, X. Chi, T. Siegrist, A. M. Sergent, and A. P. Ramirez, Amorphouslike Density of Gap States in Single-Crystal Pentacene, Physical Review Letters, vol.33, issue.8, p.86802, 2004.
DOI : 10.1103/PhysRevB.68.041202

N. Tessler and Y. Roichman, Amorphous organic molecule/polymer diodes and transistors???Comparison between predictions based on Gaussian or exponential density of states, Organic Electronics, vol.6, issue.5-6, pp.5-6, 2005.
DOI : 10.1016/j.orgel.2005.06.006

G. Paasch and S. Scheinert, Charge carrier density of organics with Gaussian density of states: Analytical approximation for the Gauss???Fermi integral, Journal of Applied Physics, vol.107, issue.10, p.104501, 2010.
DOI : 10.1016/S0379-6779(02)00012-7

J. D. Livingston, Electronic Properties of Engineering Materials, 1999.

W. Warta, R. Stehle, and N. Karl, Ultrapure, high mobility organic photoconductors, Applied Physics A Solids and Surfaces, vol.20, issue.3, 1985.
DOI : 10.1007/BF00624938

H. Bässler and A. Köhler, Charge Transport in Organic Semiconductors, Unimolecular and Supramolecular Electronics I
DOI : 10.1007/128_2011_218

C. Liu, T. Minari, X. Lu, A. Kumatani, K. Takimiya et al., Solution-Processable Organic Single Crystals with Bandlike Transport in Field-Effect Transistors, Advanced Materials, vol.3, issue.4, pp.523-526, 2010.
DOI : 10.1038/nmat1105

N. A. Minder, S. Ono, Z. Chen, A. Facchetti, and A. F. Morpurgo, Band-Like Electron Transport in Organic Transistors and Implication of the Molecular Structure for Performance Optimization, Advanced Materials, vol.132, issue.4, pp.503-508, 2011.
DOI : 10.1021/ja1040732

T. Sakanoue and H. Sirringhaus, Band-like temperature dependence of mobility in a??solution-processed organic semiconductor, Nature Materials, vol.97, issue.9, pp.736-740, 2010.
DOI : 10.1557/mrs2008.139

O. Ostroverkhova, D. G. Cooke, S. Shcherbyna, R. F. Egerton, F. A. Hegmann et al., Bandlike transport in pentacene and functionalized pentacene thin films revealed by subpicosecond transient photoconductivity measurements, Physical Review B, vol.312, issue.3, pp.35-204, 2005.
DOI : 10.1063/1.1631736

M. Shur, M. Hack, and J. G. Shaw, A new analytic model for amorphous silicon thin???film transistors, Journal of Applied Physics, vol.65, issue.7, pp.3371-3382, 1989.
DOI : 10.1063/1.342861

M. S. Shur, M. D. Jacunski, H. C. Slade, and M. Hack, Analytical models for amorphous-silicon and polysilicon thin-film transistors for high-definition-display technology, Journal of the Society for Information Display, vol.13, issue.78, pp.223-236, 1995.
DOI : 10.1557/PROC-219-315

G. Horowitz, R. Hajlaoui, and P. Delannoy, Temperature Dependence of the Field-Effect Mobility of Sexithiophene. Determination of the Density of Traps, Journal de Physique III, vol.5, issue.4, pp.355-371, 1995.
DOI : 10.1051/jp3:1995132
URL : https://hal.archives-ouvertes.fr/jpa-00249316

A. Miller and E. Abrahams, Impurity Conduction at Low Concentrations, Physical Review, vol.45, issue.3, pp.745-755, 1960.
DOI : 10.1007/BF01329207

Y. N. Gartstein and E. M. , High-field hopping mobility in molecular systems with spatially correlated energetic disorder, Chemical Physics Letters, vol.245, issue.4-5, pp.351-358, 1995.
DOI : 10.1016/0009-2614(95)01031-4

H. Bässler, G. Schönherr, M. Abkowitz, and D. M. Pai, Hopping transport in prototypical organic glasses, Physical Review B, vol.35, issue.36, pp.3105-3113, 1982.
DOI : 10.1016/0022-3093(80)90303-8

P. M. Borsenberger, ???polycarbonate, Journal of Applied Physics, vol.36, issue.12, pp.6263-6275, 1990.
DOI : 10.1063/1.332644

P. M. Borsenberger, L. Pautmeier, and H. Bässler, Charge transport in disordered molecular solids, The Journal of Chemical Physics, vol.183, issue.8, pp.5447-5456, 1991.
DOI : 10.1103/PhysRevB.39.7500

S. Baranovski, Charge Transport in Disordered Solids with Applications in Electronics, 2006.
DOI : 10.1002/0470095067

S. D. Baranovskii, I. P. Zvyagin, H. Cordes, S. Yamasaki, and P. Thomas, Percolation Approach to Hopping Transport in Organic Disordered Solids, physica status solidi (b), vol.39, issue.1, pp.281-288, 2002.
DOI : 10.1080/13642817908245357

C. C. Tanase, E. J. Meijer, P. W. Blom, and D. M. De-leeuw, Unification of the Hole Transport in Polymeric Field-Effect Transistors and Light-Emitting Diodes, Physical Review Letters, vol.4, issue.21, p.216601, 2003.
DOI : 10.1002/1521-4095(20020205)14:3<212::AID-ADMA212>3.0.CO;2-V

W. J. Schottky, Zur Halbleitertheorie der Sperrschicht- und Spitzengleichrichter, Zeitschrift f???r Physik, vol.113, issue.5-6, pp.367-371, 1939.
DOI : 10.1007/BF01340116

N. F. Mott, The Theory of Crystal Rectifiers, Proc. Roy. Soc. Ser. A, vol.171, issue.27, p.38, 1939.

A. Kahn, N. Koch, and W. Gao, Electronic structure and electrical properties of interfaces between metals and ?-conjugated molecular films, Journal of Polymer Science Part B: Polymer Physics, vol.94, issue.21, pp.2529-2548, 2003.
DOI : 10.1201/9780203910870

H. Ishii and K. Seki, Energy level alignment at organic/metal interfaces studied by UV photoemission: breakdown of traditional assumption of a common vacuum level at the interface, IEEE Transactions on Electron Devices, vol.44, issue.8, pp.1295-1301, 1997.
DOI : 10.1109/16.605471

H. Fukagawa, S. Kera, T. Kataoka, S. Hosoumi, Y. Watanabe et al., The Role of the Ionization Potential in Vacuum-Level Alignment at Organic Semiconductor Interfaces, Advanced Materials, vol.109, issue.147, pp.665-668, 2007.
DOI : 10.1103/PhysRevB.71.041306

M. Knupfer and H. Peisert, Electronic properties of interfaces between model organic semiconductors and metals, physica status solidi (a), vol.201, issue.6, pp.1055-1074, 2004.
DOI : 10.1002/pssa.200304332

N. Koch and A. Vollmer, Electrode-molecular semiconductor contacts: Work-function-dependent hole injection barriers versus Fermi-level pinning, Applied Physics Letters, vol.89, issue.16, p.162107, 2006.
DOI : 10.1016/j.cplett.2005.08.004

M. Oehzelt, N. Koch, and G. Heimel, Organic semiconductor density of states controls the energy level alignment at electrode interfaces, Nature Communications, vol.5, pp.1-8, 2014.
DOI : 10.1063/1.2890415

J. Ivanco, F. P. Netzer, and M. G. Ramsey, On validity of the Schottky-Mott rule in organic semiconductors: Sexithiophene on various substrates, Journal of Applied Physics, vol.41, issue.10, p.103712, 2007.
DOI : 10.1063/1.1332080

J. Bardeen, Surface States and Rectification at a Metal Semi-Conductor Contact, Physical Review, vol.71, issue.10, pp.717-727, 1947.
DOI : 10.1017/S0305004100020570

W. Monch, On the physics of metal-semiconductor interfaces, Reports on Progress in Physics, vol.53, issue.3, p.221, 1990.
DOI : 10.1088/0034-4885/53/3/001

R. T. Tung, Recent advances in Schottky barrier concepts, Materials Science and Engineering: R: Reports, vol.35, issue.1-3, pp.1-138, 2001.
DOI : 10.1016/S0927-796X(01)00037-7

L. Ley, Y. Smets, C. I. Pakes, and J. Ristein, Calculating the Universal Energy-Level Alignment of Organic Molecules on Metal Oxides, Advanced Functional Materials, vol.44, issue.7, pp.794-805, 2012.
DOI : 10.1143/JJAP.44.3751

F. Amy, C. Chan, and A. Kahn, Polarization at the gold/pentacene interface, Organic Electronics, vol.6, issue.2, pp.85-91, 2005.
DOI : 10.1016/j.orgel.2005.03.003

H. D. Yoshida-]-s, O. Baranovskii, P. Rubel, and . Thomas, Measuring the electron affinity of organic solids: an indispensable new tool for organic electronics, Analytical and Bioanalytical Chemistry, vol.83, issue.10???12, pp.2-7, 2005.
DOI : 10.1063/1.2771096

S. D. Baranovskii, T. Faber, F. Hensel, and P. Thomas, The applicability of the transport-energy concept to various disordered materials, Journal of Physics: Condensed Matter, vol.9, issue.13, pp.2699-2706, 1997.
DOI : 10.1088/0953-8984/9/13/007

J. Hwang, A. Wan, and A. Kahn, Energetics of metal???organic interfaces: New experiments and assessment of the field, Materials Science and Engineering: R: Reports, vol.64, issue.1-2, pp.1-31, 2009.
DOI : 10.1016/j.mser.2008.12.001

J. R. Macdonald, Impedance spectroscopy, Annals of Biomedical Engineering, vol.12, issue.3, pp.289-305, 1992.
DOI : 10.1002/recl.19600791014
URL : https://hal.archives-ouvertes.fr/hal-00920264

J. Drechsel, M. Pfeiffer, X. Zhou, A. Nollau, and K. Leo, Organic Mip-diodes by p-doping of amorphous wide-gap semiconductors: CV and impedance spectroscopy, Synthetic Metals, vol.127, issue.1-3, pp.1-3, 2002.
DOI : 10.1016/S0379-6779(01)00623-3

G. Garcia-belmonte, P. P. Boix, J. Bisquert, M. Sessolo, and H. J. Bolink, Simultaneous determination of carrier lifetime and electron density-of-states in P3HT:PCBM organic solar cells under illumination by impedance spectroscopy, Solar Energy Materials and Solar Cells, vol.94, issue.2, pp.366-375, 2010.
DOI : 10.1016/j.solmat.2009.10.015

M. Glatthaar, N. Mingirulli, B. Zimmermann, T. Ziegler, R. Kern et al., Impedance spectroscopy on organic bulk-heterojunction solar cells, physica status solidi (a), vol.97, issue.452, pp.125-127, 2005.
DOI : 10.1002/pssa.200521149

G. Garcia-belmonte, A. Munar, E. M. Barea, J. Bisquert, I. Ugarte et al., Charge carrier mobility and lifetime of organic bulk heterojunctions analyzed by impedance spectroscopy, Organic Electronics, vol.9, issue.5, pp.847-851, 2008.
DOI : 10.1016/j.orgel.2008.06.007

T. Okachi, T. Nagase, T. Kobayashi, and H. Naito, Determination of Charge-Carrier Mobility in Organic Light-Emitting Diodes by Impedance Spectroscopy in Presence of Localized States, Japanese Journal of Applied Physics, vol.47, issue.12, p.8965, 2008.
DOI : 10.1143/JJAP.47.8965

V. S. Reddy, S. Das, S. K. Ray, and A. Dhar, Studies on conduction mechanisms of pentacene based diodes using impedance spectroscopy, Journal of Physics D: Applied Physics, vol.40, issue.24, p.7687, 2007.
DOI : 10.1088/0022-3727/40/24/015

C. Chen, B. Huang, M. Lin, Y. Lu, T. Cho et al., Impedance spectroscopy and equivalent circuits of conductively doped organic hole-transport materials, Organic Electronics, vol.11, issue.12, pp.1901-1908, 2010.
DOI : 10.1016/j.orgel.2010.09.005

. Mathworks, Available: https://fr.mathworks.com, 2010.

M. S. Research and I. S. Program, Design Oriented ModellINg for flexible electrOnics, pp.2014-2016, 2015.

R. Feynman, The Character of Physical Law, 1965.

S. Steudel, K. Myny, V. Arkhipov, C. Deibel, S. De-vusser et al., 50 MHz rectifier based on an organic diode, Nature Materials, vol.870, issue.8, pp.597-600, 2005.
DOI : 10.1063/1.1579870

C. Kang, J. Wade, S. Yun, J. Lim, H. Cho et al., 1 GHz Pentacene Diode Rectifiers Enabled by Controlled Film Deposition on SAM-Treated Au Anodes, Advanced Electronic Materials, vol.513, issue.2, pp.282-289, 2015.
DOI : 10.1080/15421400903212034

A. Haldi, A. Sharma, W. J. Potscavage, and B. Kippelen, Equivalent circuit model for organic single-layer diodes, Journal of Applied Physics, vol.104, issue.6, p.64503, 2008.
DOI : 10.1063/1.1485129

D. M. Taylor and H. L. Gomes, Electrical characterization of the rectifying contact between aluminium and electrodeposited poly(3-methylthiophene), Journal of Physics D: Applied Physics, vol.28, issue.12, pp.2554-2568, 1995.
DOI : 10.1088/0022-3727/28/12/025

P. Stallinga, H. L. Gomes, M. Murgia, and K. Müllen, Interface state mapping in a Schottky barrier of the organic semiconductor terrylene, Organic Electronics, vol.3, issue.1, 2002.
DOI : 10.1016/S1566-1199(02)00024-1

R. S. Muller and T. I. Kamins, Device Electronics for Integrated Circuits, 2003.

T. Kirchartz, W. Gong, S. A. Hawks, T. Agostinelli, R. C. Mackenzie et al., Sensitivity of the Mott???Schottky Analysis in Organic Solar Cells, The Journal of Physical Chemistry C, vol.116, issue.14, pp.7672-7680, 2012.
DOI : 10.1021/jp300397f

D. Braga, M. Campione, A. Borghesi, and G. Horowitz, Organic Metal- Semiconductor Field-Effect Transistor (OMESFET) Fabricated on a Rubrene Single Crystal Capacitive Behavior of Pentacene-Based Diodes: Quasistatic Dielectric Constant and Dielectric Strength, Adv. Mater. J. Appl. Phys, vol.22, issue.109 8, pp.424-428, 2010.

W. Gao and A. Kahn, -conjugated molecular films, Journal of Physics: Condensed Matter, vol.15, issue.38, pp.2757-2770, 2003.
DOI : 10.1088/0953-8984/15/38/014

M. Pfeiffer, K. Leo, X. Zhou, J. S. Huang, M. Hofmann et al., Doped organic semiconductors: Physics and application in light emitting diodes, Organic Electronics, vol.4, issue.2-3, pp.89-103, 2003.
DOI : 10.1016/j.orgel.2003.08.004

O. D. Jurchescu, J. Baas, and T. T. Palstra, Electronic transport properties of pentacene single crystals upon exposure to air, Applied Physics Letters, vol.87, issue.5, pp.52-102, 2005.
DOI : 10.1103/PhysRevLett.77.542

P. H. Nguyen, S. Scheinert, S. Berleb, and W. Brütting, The influence of deep traps on transient current???voltage characteristics of organic light-emitting diodes, Organic Electronics, vol.2, issue.3-4, 2001.
DOI : 10.1016/S1566-1199(01)00017-9

P. De-bruyn, A. H. Van-rest, G. A. Wetzelaer, D. M. De-leeuw, and P. W. Blom, Diffusion-Limited Current in Organic Metal-Insulator-Metal Diodes, Physical Review Letters, vol.111, issue.18, p.186801, 2013.
DOI : 10.1063/1.3391668

S. Jung, C. H. Kim, Y. Bonnassieux, and G. Horowitz, Injection barrier at metal/organic semiconductor junctions with a Gaussian density-of-states, Journal of Physics D: Applied Physics, vol.48, issue.39, pp.1-10, 2015.
DOI : 10.1088/0022-3727/48/39/395103

J. S. Bonham and D. H. Jarvis, Theory of space-charge-limited current with one blocking electrode, Australian Journal of Chemistry, vol.31, issue.10, pp.2103-2115, 1978.
DOI : 10.1071/CH9782103

M. J. Kearney and R. J. Martin, Airy asymptotics: the logarithmic derivative and its reciprocal, Journal of Physics A: Mathematical and Theoretical, vol.42, issue.42, p.425201, 2009.
DOI : 10.1088/1751-8113/42/42/425201

Y. Roichman and N. Tessler, Generalized Einstein relation for disordered semiconductors???implications for device performance, Applied Physics Letters, vol.80, issue.11, 1948.
DOI : 10.1002/(SICI)1521-4095(199905)11:7<519::AID-ADMA519>3.0.CO;2-E
URL : http://arxiv.org/pdf/cond-mat/0109432

S. L. Van-mensfoort and R. Coehoorn, Effect of Gaussian disorder on the voltage dependence of the current density in sandwich-type devices based on organic semiconductors, Physical Review B, vol.88, issue.112, pp.85-207, 2008.
DOI : 10.1103/PhysRevB.75.153201

M. Vissenberg and M. Matters, Theory of the field-effect mobility in amorphous organic transistors, Physical Review B, vol.9, issue.20, 1998.
DOI : 10.1103/PhysRevLett.54.146

C. C. Tanase, P. W. Blom, and D. De-leeuw, -phenylene vinylene), Physical Review B, vol.57, issue.19, p.193202, 2004.
DOI : 10.1117/12.507996

Y. Roichman, Y. Preezant, and N. Tessler, Analysis and modeling of organic devices, physica status solidi (a), vol.201, issue.6, pp.1246-1262, 2004.
DOI : 10.1002/pssa.200404342

R. Coehoorn, W. Pasveer, P. Bobbert, and M. Michels, Charge-carrier concentration dependence of the hopping mobility in organic materials with Gaussian disorder, Physical Review B, vol.9, issue.136, p.155206, 2005.
DOI : 10.1063/1.1868865

S. L. Van-mensfoort, S. I. Vulto, R. A. Janssen, and R. Coehoorn, Hole transport in polyfluorene-based sandwich-type devices: Quantitative analysis of the role of energetic disorder, Physical Review B, vol.27, issue.8, pp.85-208, 2008.
DOI : 10.1103/PhysRevLett.98.066101

W. Han, H. Yoshida, N. Ueno, and S. Kera, Electron affinity of pentacene thin film studied by radiation-damage free inverse photoemission spectroscopy, Applied Physics Letters, vol.103, issue.12, pp.123-303, 2013.
DOI : 10.1016/j.cplett.2009.11.069

Y. M. Lee, J. W. Kim, H. Min, T. G. Lee, and Y. Park, Growth morphology and energy level alignment of pentacene films on SiO2 surface treated with self-assembled monolayer, Current Applied Physics, vol.11, issue.5, pp.1168-1172, 2011.
DOI : 10.1016/j.cap.2011.02.013

W. Zhao, Y. Qi, T. Sajoto, S. Barlow, S. R. Marder et al., Remote doping of a pentacene transistor: Control of charge transfer by molecular-level engineering, Applied Physics Letters, vol.97, issue.12, pp.123-305, 2010.
DOI : 10.1063/1.2099540

G. Horowitz, Validity of the concept of band edge in organic semiconductors, Journal of Applied Physics, vol.46, issue.11, pp.115-502, 2015.
DOI : 10.1103/PhysRevB.86.035320

J. E. Lilienfeld, Method and apparatus for controlling electric currents Available: https://www.google, 1930.

D. F. Barbe and C. R. Westgate, Surface state parameters of metal-free phthalocyanine single crystals, Journal of Physics and Chemistry of Solids, vol.31, issue.12, pp.2679-2687, 1970.
DOI : 10.1016/0022-3697(70)90265-9

M. L. Petrova, R. L. Kurokawa, and S. Nara, Field-eeffect in organic semiconductors Electrical Properties of Polyacetylene/polysiloxane Interface, Fiz. Tverd. Tela (Sov. Phys.-Solid State) J. Appl. Phys, vol.12, issue.54 6, pp.961-3255, 1970.

D. D. Eley, Phthalocyanines as Semiconductors, Nature, vol.162, issue.4125, pp.819-819, 1948.
DOI : 10.1038/162819a0

D. D. Eley, G. D. Parfitt, M. J. Perry, and D. H. Taysum, The semiconductivity of organic substances. Part 1, Transactions of the Faraday Society, vol.49, pp.79-86, 1953.
DOI : 10.1039/tf9534900079

C. R. Newman, C. D. Frisbie, D. A. Da-silva-filho, J. Brédas, P. C. Ewbank et al., Introduction to Organic Thin Film Transistors and Design of n-Channel Organic Semiconductors, Chemistry of Materials, vol.16, issue.23, pp.4436-4451, 2004.
DOI : 10.1021/cm049391x

D. Braga and G. Horowitz, High-Performance Organic Field-Effect Transistors, Advanced Materials, vol.91, issue.14-15, pp.14-15, 2009.
DOI : 10.1063/1.2813640

S. A. Dibenedetto, A. Facchetti, M. A. Ratner, and T. J. Marks, Molecular Self-Assembled Monolayers and Multilayers for Organic and Unconventional Inorganic Thin-Film Transistor Applications, Advanced Materials, vol.455, issue.14-15, pp.14-15, 2009.
DOI : 10.1016/S1369-7021(07)70019-6

R. A. Street and A. Salleo, Contact effects in polymer transistors, Applied Physics Letters, vol.81, issue.15, p.2887, 2002.
DOI : 10.1103/PhysRevB.58.R13411

T. J. Richards and H. Sirringhaus, Analysis of the contact resistance in staggered, top-gate organic field-effect transistors, Journal of Applied Physics, vol.102, issue.9, pp.94-510, 2007.
DOI : 10.1557/JMR.2004.0266

H. Klauk, Organic thin-film transistors, Chemical Society Reviews, vol.372, issue.7, p.2643, 2010.
DOI : 10.1002/adma.200902740

G. Horowitz and P. Delannoy, An analytical model for organic???based thin???film transistors, Journal of Applied Physics, vol.62, issue.1, pp.469-475, 1991.
DOI : 10.1063/1.343361

W. Lin, R. Müller, K. Myny, S. Steudel, J. Genoe et al., Room-temperature solution-processed high-k gate dielectrics for large area electronics applications, Organic Electronics, vol.12, issue.6, pp.955-960, 2011.
DOI : 10.1016/j.orgel.2011.03.014

D. Vuillaume, C. Boulas, J. Collet, J. V. Davidovits, and F. Rondelez, Organic insulating films of nanometer thicknesses, Applied Physics Letters, vol.69, issue.354, pp.1646-1648, 1996.
DOI : 10.1063/1.117444

H. Klauk, U. Zschieschang, J. Pflaum, and M. Halik, Ultralow-power organic complementary circuits, Nature, vol.82, issue.7129, pp.745-748, 2007.
DOI : 10.1038/nature05533

Y. Ha, J. D. Emery, M. J. Bedzyk, H. Usta, A. Facchetti et al., Solution-Deposited Organic???Inorganic Hybrid Multilayer Gate Dielectrics. Design, Synthesis, Microstructures, and Electrical Properties with Thin-Film Transistors, Journal of the American Chemical Society, vol.133, issue.26, pp.10-239, 2011.
DOI : 10.1021/ja202755x

M. Yoon, H. Yan, A. Facchetti, and T. J. Marks, Low-Voltage Organic Field-Effect Transistors and Inverters Enabled by Ultrathin Cross-Linked Polymers as Gate Dielectrics, Journal of the American Chemical Society, vol.127, issue.29, pp.10-388, 2005.
DOI : 10.1021/ja052488f

C. Kim, Z. Wang, H. Choi, Y. Ha, A. Facchetti et al., Printable Cross-Linked Polymer Blend Dielectrics. Design Strategies, Synthesis, Microstructures, and Electrical Properties, with Organic Field-Effect Transistors as Testbeds, Journal of the American Chemical Society, vol.130, issue.21, pp.6867-6878, 2008.
DOI : 10.1021/ja801047g

Y. Noh and H. Sirringhaus, Ultra-thin polymer gate dielectrics for top-gate polymer field-effect transistors, Organic Electronics, vol.10, issue.1, pp.174-180, 2009.
DOI : 10.1016/j.orgel.2008.10.021

F. Loffredo, I. A. Grimaldi, R. Miscioscia, G. Nenna, F. Villani et al., Photosensing Properties of Pentacene OFETs Based on a Novel PMMA Copolymer Gate Dielectric, Journal of Display Technology, vol.11, issue.6, pp.533-540, 2015.
DOI : 10.1109/JDT.2014.2363685

I. Kymissis, C. D. Dimitrakopoulos, and S. Purushothaman, High-performance bottom electrode organic thin-film transistors, IEEE Transactions on Electron Devices, vol.48, issue.6, pp.1060-1064, 2001.
DOI : 10.1109/16.925226

Y. Xu, T. Minari, K. Tsukagoshi, J. A. Chroboczek, and G. Ghibaudo, Direct evaluation of low-field mobility and access resistance in pentacene field-effect transistors, Journal of Applied Physics, vol.107, issue.11, pp.114-507, 2010.
DOI : 10.1063/1.2009831

K. P. Puntambekar, P. V. Pesavento, and C. D. Frisbie, Surface potential profiling and contact resistance measurements on operating pentacene thin-film transistors by Kelvin probe force microscopy, Applied Physics Letters, vol.83, issue.26, pp.5539-5543, 2003.
DOI : 10.1063/1.1455145

C. Bock, D. V. Pham, U. Kunze, D. Käfer, G. Witte et al., Improved morphology and charge carrier injection in pentacene field-effect transistors with thiol-treated electrodes, Journal of Applied Physics, vol.7, issue.11, pp.114-517, 2006.
DOI : 10.1063/1.1875749

P. V. Pesavento, R. J. Chesterfield, C. R. Newman, and C. D. Frisbie, Gated four-probe measurements on pentacene thin-film transistors: Contact resistance as a function of gate voltage and temperature, Journal of Applied Physics, vol.96, issue.12, pp.7312-7326, 2004.
DOI : 10.1016/S0927-796X(97)00020-X

C. H. Kim, Y. Bonnassieux, and G. Horowitz, Fundamental Benefits of the Staggered Geometry for Organic Field-Effect Transistors, IEEE Electron Device Letters, vol.32, issue.9, pp.1302-1304, 2011.
DOI : 10.1109/LED.2011.2160249
URL : https://hal.archives-ouvertes.fr/hal-00630469

P. Suciu and R. L. Johnston, Experimental derivation of the source and drain resistance of MOS transistors, IEEE Transactions on Electron Devices, vol.27, issue.9, 1980.
DOI : 10.1109/T-ED.1980.20116

M. S. Shur, H. C. Slade, M. D. Jacunski, A. A. Owusu, and T. , SPICE Models for Amorphous Silicon and Polysilicon Thin Film Transistors, Journal of The Electrochemical Society, vol.144, issue.8, pp.2833-2839, 1997.
DOI : 10.1149/1.1837903

G. Horowitz, M. E. Hajlaoui, and R. Hajlaoui, Temperature and gate voltage dependence of hole mobility in polycrystalline oligothiophene thin film transistors, Journal of Applied Physics, vol.5, issue.9, pp.4456-4463, 2000.
DOI : 10.1063/1.360341

M. Estrada, A. Cerdeira, J. Puigdollers, L. Reséndiz, J. Pallares et al., Accurate modeling and parameter extraction method for organic TFTs, Solid-State Electronics, vol.49, issue.6, pp.1009-1016, 2005.
DOI : 10.1016/j.sse.2005.02.004

H. Klauk, G. Schmid, W. Radlik, W. Weber, L. Zhou et al., Contact resistance in organic thin film transistors, Solid-State Electronics, vol.47, issue.2, pp.297-301, 2003.
DOI : 10.1016/S0038-1101(02)00210-1

G. B. Blanchet, C. R. Fincher, M. Lefenfeld, and J. A. Rogers, Contact resistance in organic thin film transistors, Applied Physics Letters, vol.84, issue.2, pp.296-299, 2004.
DOI : 10.1063/1.351809

C. Chiang, S. Martin, J. Kanicki, Y. Ugai, T. Yukawa et al., Top-Gate Staggered Amorphous Silicon Thin-Film Transistors: Series Resistance and Nitride Thickness Effects, Japanese Journal of Applied Physics, vol.37, issue.Part 1, No. 11, pp.5914-5920, 1998.
DOI : 10.1143/JJAP.37.5914

G. Horowitz, X. Peng, and D. Fichou, The oligothiophene???based field???effect transistor: How it works and how to improve it, Journal of Applied Physics, vol.28, issue.1, p.528, 1990.
DOI : 10.1016/0040-6090(89)90630-5

S. Jung, C. H. Kim, Y. Bonnassieux, and G. Horowitz, Fundamental insights into the threshold characteristics of organic field-effect transistors, Journal of Physics D: Applied Physics, vol.48, issue.3, p.35106, 2015.
DOI : 10.1088/0022-3727/48/3/035106
URL : https://hal.archives-ouvertes.fr/hal-01103862

S. Jain, Measurement of threshold voltage and channel length of submicron MOSFETs, IEE Proceedings I (Solid-State and Electron Devices), pp.162-164, 1988.
DOI : 10.1049/ip-i-1.1988.0029

S. Luan and G. W. Neudeck, An experimental study of the source/drain parasitic resistance effects in amorphous silicon thin film transistors, Journal of Applied Physics, vol.53, issue.2, pp.766-774, 1992.
DOI : 10.1109/16.2431

D. Boudinet, G. L. Blevennec, C. Serbutoviez, J. Verilhac, H. Yan et al., Contact resistance and threshold voltage extraction in n-channel organic thin film transistors on plastic substrates, Journal of Applied Physics, vol.51, issue.8, pp.84-510, 2009.
DOI : 10.1021/nl0629106

C. C. Tanase, P. W. Blom, D. M. De-leeuw, and E. J. Meijer, Charge carrier density dependence of the hole mobility in poly(p-phenylene vinylene), physica status solidi (a), vol.201, issue.6, pp.1236-1245, 2004.
DOI : 10.1002/pssa.200404340

A. Cerdeira, M. Estrada, R. Garcìa, and A. Ortiz-conde, New procedure for the extraction of basic a-Si:H TFT model parameters in the linear and saturation regions, Solid-State Electronics, vol.45, issue.7, pp.1077-1080, 2001.
DOI : 10.1016/S0038-1101(01)00143-5

J. W. Jin, M. Oudwan, D. Daineka, and O. Moustapha, Parameter extraction method for universal amorphous silicon thin-film transistors simulation program with integrated circuit emphasis model, IET Circuits Devices Syst, 2012.
DOI : 10.1049/iet-cds.2011.0124

A. Ortiz-conde, F. J. Garcìa-sánchez, J. Muci, A. T. Barrios, J. J. Liou et al., Revisiting MOSFET threshold voltage extraction methods, Microelectronics Reliability, vol.53, issue.1, pp.90-104, 2013.
DOI : 10.1016/j.microrel.2012.09.015

V. Mosser, D. Seron, and Y. Haddab, Threshold voltage extraction method in field-effect devices with power-law dependence of mobility on carrier density, Proceedings of the 2015 International Conference on Microelectronic Test Structures, 2015.
DOI : 10.1109/ICMTS.2015.7106121

S. Van-mensfoort and R. Coehoorn, Effect of Gaussian disorder on the voltage dependence of the current density in sandwich-type devices based on organic semiconductors, Physical Review B, vol.88, issue.112, p.85207, 2008.
DOI : 10.1103/PhysRevB.75.153201

S. Jung, A. Mohammed, G. Guillaume, A. Thamer, P. Alba et al., A TIPS-TPDOtetraCN Based n-Type Organic Field-Effect Transistor with a Cross-linked PMMA Polymer Gate Dielectric, Appl. Mater. Inter, vol.8, issue.23, pp.14-701, 2016.

E. J. Meijer, G. H. Gelinck, E. Van-veenendaal, B. H. Huisman, D. M. De-leeuw et al., Scaling behavior and parasitic series resistance in disordered organic field-effect transistors, Applied Physics Letters, vol.39, issue.25, pp.4576-4579, 2003.
DOI : 10.1103/PhysRevLett.86.3867

D. Natali, L. Fumagalli, and M. Sampietro, Modeling of organic thin film transistors: Effect of contact resistances, Journal of Applied Physics, vol.135, issue.1, pp.14-501, 2007.
DOI : 10.1016/S0009-2614(98)01277-9

G. Gruntz, H. Lee, L. Hirsch, F. Castet, T. Toupance et al., Nitrile Substitution Effect on Triphenodioxazine-Based Materials for Liquid-Processed Air-Stable n-Type Organic Field Effect Transistors Semiconductor device modeling for VLSI, Adv. Electron. Mater, p.1500072, 1993.
DOI : 10.1002/aelm.201500072

B. Iñiguez, R. Picos, D. Veksler, A. Koudymov, M. S. Shur et al., Universal compact model for long- and short-channel Thin-Film Transistors, Solid-State Electronics, vol.52, issue.3, pp.400-405, 2008.
DOI : 10.1016/j.sse.2007.10.027

C. H. Kim, A. Castro-carranza, M. Estrada, A. Cerdeira, Y. Bonnassieux et al., A Compact Model for Organic Field-Effect Transistors With Improved Output Asymptotic Behaviors, IEEE Trans. Electron Devices, vol.60, issue.3, pp.1136-1141, 2013.
URL : https://hal.archives-ouvertes.fr/hal-00790788

O. Marinov, M. J. Deen, U. Zschieschang, and H. Klauk, Organic Thin-Film Transistors: Part I???Compact DC Modeling, IEEE Transactions on Electron Devices, vol.56, issue.12, pp.2952-2961, 2009.
DOI : 10.1109/TED.2009.2033308

R. W. De-boer, M. E. Gershenson, A. F. Morpurgo, and V. Podzorov, Organic single-crystal field-effect transistors, physica status solidi (a), vol.201, issue.6, pp.1302-1331, 2004.
DOI : 10.1002/pssa.200404336

Y. Diao, L. Shaw, Z. Bao, and S. C. Mannsfeld, Morphology control strategies for solution-processed organic semiconductor thin films, Energy Environ. Sci., vol.20, issue.7, pp.2145-2159, 2014.
DOI : 10.1039/b924415h
URL : http://pubs.rsc.org/en/content/articlepdf/2014/ee/c4ee00688g

R. L. Headrick, S. Wo, F. Sansoz, and J. E. Anthony, Anisotropic mobility in large grain size solution processed organic semiconductor thin films, Applied Physics Letters, vol.2005, issue.6, 2008.
DOI : 10.1063/1.2387135

L. Li, N. Lu, M. Liu, and H. Bässler, General Einstein relation model in disordered organic semiconductors under quasiequilibrium, Physical Review B, vol.90, issue.21, p.214107, 2014.
DOI : 10.1103/PhysRevB.77.115210

Y. S. Yang, I. K. You, J. B. Koo, S. S. Lee, S. C. Lim et al., Characteristics of Via-Hole Interconnections Fabricated by Using an Inkjet Printing Method, Journal of the Korean Physical Society, vol.57, issue.6(1), pp.1699-1701, 2010.
DOI : 10.3938/jkps.57.1699