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ainsi que la température du substrat ont été étudiés Grâce à une quantification de la densité de charges par caractérisation d'oxyde de semi-conducteur par décharge corona, il a été montré qu'au moins 70 % de ce qu'on appelle généralement les « charges fixes » sont, en réalité, des charges piégées qui résulteraient de l'injection d'électrons du substrat de silicium dans l'oxyde d'aluminium. Par la suite, nous avons étudié l'influence des paramètres de dépôt de l'oxyde d'aluminium ainsi que l'impact des traitements post-dépôt sur le piégeage des charges et, a fortiori, sur les performances passivantes qui en résultent au sein d'un empilement Al 2 O 3 /a- SiN X :H, déposé sur du silicium cristallin de type p. Les liens entre l'épaisseur de l'oxyde d'aluminium, la qualité et la durabilité de la passivation ont pu être établis ,