Skip to Main content Skip to Navigation

Etude micro et nanostructurale des défaillances d'architectures microélectroniques en environnement humide

Abstract : This thesis aims at using mechanical stress engineering to improve the reliability of microelectronic components under Temperature-Humidity-Bias testing in order to develop robust packaging technologies for space. The application is done on microware devices based on gallium arsenic (GaAs) with low noise amplifier function (LLA and LNA). We started work by analyzing failure mechanisms of MMIC devices (Monolithic Microwave Integrated Circuit) in severe environment and with the evaluation of thermomechanical induced stresses in stack layers by test temperature. We propose two methods to study the impact of mechanical applied stress on the reliability of microware devices in space qualification: the first method called “indirect” is a bending by buckling way which applies uniaxial stress (250MPa in absolute value) and the second method called “direct” with biaxial stress by treating silicon nitride passivation (SiNx) layer with nitrogen ion implantation (~ -1,2GPa). A system which applies mechanical stress and a printed circuit especially designed for this thesis. Characterization benches with connectors of probes are used to make electrical measurements of transistors and to calibrate the changes of internal stress by piezoresistive effects in semi semiconductors. Numerical simulations have been performed in Abaqus ® to evaluate thermomechanical stresses induced in layers through devices preparation and after plastic encapsulation (Dam&Fill). For each proposed method, aging test was carried out in the most severe conditions (85°C / 85%RH / inverse polarization of the gate). The results of indirect case by buckling on 1850h (A) / 2450h (B) of testing showed a significant improvement of their reliability either in tensile or compressive applied stress. Indeed, for the studied devices the presence of stress delayed considerably damage of more than 80% of aged devices. The failure analysis of failed devices was completed by finite element method simulations in Abaqus ®. We observed and blisters near the gate fingers and capacitors which are linked to the loss of static and dynamic performances. The results in the direct case by surface treatment on 1000h (A and B) of testing also showed the improvement of the reliability for all aged components. The comparison of these results with the indirect case helps to identify the nature and level of optimal applied stress to ensure a better reliability of GaAs devices under THB testing. A study of the physico-chemical behavior of the failures at the surface was also performed in order to make a link between different scales of failure: from the loss of performance until the breaking of chemical bonds through changes of internal stress of the layers.
Complete list of metadata
Contributor : ABES STAR :  Contact
Submitted on : Thursday, June 30, 2022 - 12:37:13 PM
Last modification on : Tuesday, August 2, 2022 - 3:09:00 AM


Version validated by the jury (STAR)


  • HAL Id : tel-03709965, version 1


Kokou Adokanou. Etude micro et nanostructurale des défaillances d'architectures microélectroniques en environnement humide. Mécanique des matériaux [physics.class-ph]. Université Paris sciences et lettres, 2017. Français. ⟨NNT : 2017PSLEM064⟩. ⟨tel-03709965⟩



Record views


Files downloads